Kinetics of epitaxial formation of nanostructures by Frank–van der Merwe, Volmer–Weber and Stranski–Krastanow growth modes von Lozovoy, Kirill A., Korotaev, Alexander G., Kokhanenko, Andrey P., Dirko, Vladimir V., Voitsekhovskii, Alexander V.

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High-resolution RHEED analysis of dynamics of low-temperature superstructure transitions in Ge/Si(001) epitaxial system von Dirko, Vladimir V, Lozovoy, Kirill A, Kokhanenko, Andrey P, Voitsekhovskii, Alexander V

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Thickness-dependent elastic strain in Stranski-Krastanow growth von Dirko, Vladimir V, Lozovoy, Kirill A, Kokhanenko, Andrey P, Voitsekhovskii, Alexander V

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Application of Nanostructures in Biology and Medicine von Lozovoy, Kirill

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Molecular dynamics simulations of the growth of Ge on Si von Zhou, Ying, Lloyd, Adam, Smith, Roger, Lozovoy, Kirill A., Voitsekhovskii, Alexander V., Kokhanenko, Andrey P.

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Evolution of Epitaxial Quantum Dots Formed by Volmer–Weber Growth Mechanism von Lozovoy, Kirill A, Kokhanenko, Andrey P, Dirko, Vladimir V, Akimenko, Nataliya Yu, Voitsekhovskii, Alexander V

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Two-Photon-Excited FLIM of NAD(P)H and FAD-Metabolic Activity of Fibroblasts for the Diagnostics of Osteoimplant Survival von Lepekhina, Tatiana B, Nikolaev, Viktor V, Darvin, Maxim E, Zuhayri, Hala, Snegerev, Mikhail S, Lozhkomoev, Aleksandr S, Senkina, Elena I, Kokhanenko, Andrey P, Lozovoy, Kirill A, Kistenev, Yury V

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Single-Element 2D Materials beyond Graphene: Methods of Epitaxial Synthesis von Lozovoy, Kirill A, Izhnin, Ihor I, Kokhanenko, Andrey P, Dirko, Vladimir V, Vinarskiy, Vladimir P, Voitsekhovskii, Alexander V, Fitsych, Olena I, Akimenko, Nataliya Yu

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Generalized Muller-Kern formula for equilibrium thickness of a wetting layer with respect to the dependence of the surface energy of island facets on the thickness of the 2D layer von Lozovoy, Kirill A, Kokhanenko, Andrey P, Voitsekhovskii, Alexander V

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Recent Advances in Si-Compatible Nanostructured Photodetectors von Douhan, Rahaf, Lozovoy, Kirill, Kokhanenko, Andrey, Deeb, Hazem, Dirko, Vladimir, Khomyakova, Kristina

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Dependence of Ge/Si Avalanche Photodiode Performance on the Thickness and Doping Concentration of the Multiplication and Absorption Layers von Deeb, Hazem, Khomyakova, Kristina, Kokhanenko, Andrey, Douhan, Rahaf, Lozovoy, Kirill

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Influence of Edge Energy on Modeling the Growth Kinetics of Quantum Dots von Lozovoy, Kirill A, Kokhanenko, Andrey P, Voitsekhovskii, Alexander V

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Silicon-Based Avalanche Photodiodes: Advancements and Applications in Medical Imaging von Lozovoy, Kirill A, Douhan, Rahaf M H, Dirko, Vladimir V, Deeb, Hazem, Khomyakova, Kristina I, Kukenov, Olzhas I, Sokolov, Arseniy S, Akimenko, Nataliya Yu, Kokhanenko, Andrey P

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Peculiarities of the 7 × 7 to 5 × 5 Superstructure Transition during Epitaxial Growth of Germanium on Silicon (111) Surface von Dirko, Vladimir V, Lozovoy, Kirill A, Kokhanenko, Andrey P, Kukenov, Olzhas I, Korotaev, Alexander G, Voitsekhovskii, Alexander V

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Epitaxial fabrication of 2D materials of group IV elements von Izhnin, Ihor I., Kurbanov, Kurban R., Lozovoy, Kirill A., Kokhanenko, Andrey P., Dirko, Vladimir V., Voitsekhovskii, Alexander V.

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Single-photon avalanche diode detectors based on group IV materials von Izhnin, Ihor I., Lozovoy, Kirill A., Kokhanenko, Andrey P., Khomyakova, Kristina I., Douhan, Rahaf M. H., Dirko, Vladimir V., Voitsekhovskii, Alexander V., Fitsych, Olena I., Akimenko, Nataliya Yu

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Comparative analysis of pyramidal and wedge-like quantum dots formation kinetics in Ge/Si(001) system von Lozovoy, Kirill A., Voytsekhovskiy, Alexander V., Kokhanenko, Andrey P., Satdarov, Vadim G.

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Interaction between islands in kinetic models of epitaxial growth of quantum dots von Izhnin, Ihor I., Fitsych, Olena I., Voitsekhovskii, Alexander V., Kokhanenko, Andrey P., Lozovoy, Kirill A., Dirko, Vladimir V.

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Comparative analysis of germanium-silicon quantum dots formation on Si(100), Si(111) and Sn/Si(100) surfaces von Lozovoy, Kirill, Kokhanenko, Andrey, Voitsekhovskii, Alexander

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Critical thickness of transition from 2D to 3D growth and peculiarities of quantum dots formation in GexSi1-x/Sn/Si and Ge1-ySny/Si systems von Lozovoy, Kirill A., Kokhanenko, Andrey P., Voitsekhovskii, Alexander V.

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