Modelling of epitaxial growth of two-dimensional film von Vinarskiy, V P, Kokhanenko, A P, Lozovoy, K A

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Critical thickness of 2D to 3D transition in GexSi1−x/Si(001) system von Lozovoy, K. A., Kokhanenko, A. P., Voitsekhovskii, A. V.

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The relaxation of electrophysical properties HgCdTe epitaxial films affected by plasma of high frequency nanosecond volume discharge in atmospheric-pressure air von Korotaev, A.G., Grigoryev, D.V., Voitsekhovskii, A.V., Lozovoy, K.A., Tarasenko, V.F., Ripenko, V.S., Shulepov, M.A., Erofeev, M.V., Yakushev, M.V., Dvoretskii, S.A., Mikhailov, N.N., Varavin, V.S.

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Analysis of the 7x7 to 5x5 superstructure transition by RHEED in the synthesis of Ge on Si (111) in an MBE installation von Dirko, V V, Lozovoy, K A, Kokhanenko, A P, Kukenov, O I

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Two-Dimensional Materials of Group IVA: Latest Advances in Epitaxial Methods of Growth von Lozovoy, K. A., Dirko, V. V., Vinarskiy, V. P., Kokhanenko, A. P., Voitsekhovskii, A. V., Akimenko, N. Yu

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Estimation of critical thickness of Stranski-Krastanow transition in GeSi/Sn/Si system von Lozovoy, K A, Pishchagin, A A, Kokhanenko, A P, Voitsekhovskii, A V

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Growth of Germanium Quantum Dots on Oxidized Silicon Surface von Lozovoy, K. A., Kokhanenko, A. P., Akimenko, N. Yu, Dirko, V. V., Voitsekhovskii, A. V.

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Comparison of the Growth Processes of Germanium Quantum Dots on the Si(100) and Si(111) Surfaces von Kokhanenko, A. P., Lozovoy, K. A., Voitsekhovskii, A. V.

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Elongated Quantum Dots of Ge on Si Growth Kinetics Modeling with Respect to the Additional Energy of Edges von Lozovoy, K A, Pishchagin, A A, Kokhanenko, A P, Voitsekhovskii, A V

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Parameters of Photo-Sensitive Structures Based on Ge/Si Nanogeterostructures von Douhan, R. M. H., Kokhanenko, A. P., Lozovoy, K. A.

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Influence of the Plasma of Nanosecond Diffuse Discharge in Air at Atmospheric Pressure on the Electrophysical Properties of Epitaxial CdHgTe Films von Lozovoy, K.A., Grigoryev, D.V., Shulepov, M.A., Tarasenko, V.F.

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Elongated quantum dots of Ge on Si formation modelling von Lozovoy, K A, Kokhanenko, A P, Voitsekhovskiy, A V

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Analysis of efficiency of solar energy conversion by tandem CdxZn1-xTe/Si solar cell von Grigoryev, D V, Lozovoy, K A, Pishchagin, A A

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Changes in the electro-physical properties of MCT epitaxial films affected by a plasma volume discharge induced by an avalanche beam in atmospheric-pressure air von Grigoryev, D V, Voitsekhovskii, A V, Lozovoy, K A, Tarasenko, V F, Shulepov, M A

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Influence of composition of Hg1−xCdxTe (x = 0.22-0.57) epitaxial film on dynamics of accumulation and spatial distribution of electrically active radiation defects after boron impl... von Voitsekhovskii, A V, Grigoryev, D V, Korotaev, A G, Kokhanenko, A P, Lozovoy, K A, Izhnin, I I, Savytskyy, H V, Yu Bonchyk, O, Dvoretsky, S A, Mikhailov, N N, Varavin, V S, Yakushev, M V

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Modeling the formation kinetics of wedge-shaped germanium quantum dots on silicon von Voitsekhovskii, A. V., Kokhanenko, A. P., Lozovoy, K. A.

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Analysis of efficiency of solar energy conversion by tandem Cd x Zn 1-x Te/Si solar cell von Grigoryev, D V, Lozovoy, K A, Pishchagin, A A

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Analysis of efficiency of solar energy conversion by tandem Cd sub(x)Zn sub(1-x)Te/Si solar cell von Grigoryev, D V, Lozovoy, K A, Pishchagin, A A

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Heterostructures with self-organized quantum dots of Ge on Si for optoelectronic devices von Lozovoy, K. A., Voytsekhovskiy, A. V., Kokhanenko, A. P., Satdarov, V. G., Pchelyakov, O. P., Nikiforov, A. I.

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Influence of composition of Hg 1− x Cd x Te ( x = 0.22–0.57) epitaxial film on dynamics of accumulation and spatial distribution of electrically active radiation defects after boro... von Voitsekhovskii, A V, Grigoryev, D V, Korotaev, A G, Kokhanenko, A P, Lozovoy, K A, Izhnin, I I, Savytskyy, H V, Yu Bonchyk, O, Dvoretsky, S A, Mikhailov, N N, Varavin, V S, Yakushev, M V

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