InP/GaAsSb DHBTs Fabricated in a Low-Temperature Teflon Planarization Process von Fluckiger, R., Lovblom, R., Ostinelli, O., Benedickter, H., Bolognesi, C. R.

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Accuracy of Microwave Transistor f and f Extractions von Teppati, Valeria, Tirelli, Stefano, Lovblom, Rickard, Fluckiger, Ralf, Alexandrova, Maria, Bolognesi, C. R.

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A W -Band On-Wafer Active Load-Pull System Based on Down-Conversion Techniques von Teppati, Valeria, Benedickter, Hansruedi, Marti, Diego, Garelli, Marco, Tirelli, Stefano, Lovblom, Rickard, Fluckiger, Ralf, Alexandrova, Maria, Ostinelli, Olivier, Bolognesi, Colombo R.

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Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications von Chevalier, Pascal, Jungemann, C., Lovblom, Rickard, Maneux, Cristell, Ostinelli, Olivier, Pawlak, Andreas, Rinaldi, Niccolo, Rucker, Holger, Wedel, Gerald, Zimmer, Thomas, Schroter, Michael, Bolognesi, Colombo R., d'Alessandro, Vincenzo, Alexandrova, Maria, Bock, Josef, Flickiger, Ralf, Fregonese, Sebastien, Heinemann, Bernd

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Uniform-Base InP/GaInAsSb DHBTs Exhibiting f/f>635/420 von Fluckiger, Ralf, Lovblom, Rickard, Alexandrova, Maria, Ostinelli, Olivier, Bolognesi, C. R.

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Emitter Size Effect in GaAsSb-Based DHBTs With AlInP and GaInP Emitters von Lovblom, Rickard, Fluckiger, Ralf, Ostinelli, Olivier, Alexandrova, Maria, Bolognesi, C. R.

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InP/GaAsSb DHBTs With 500-GHz Maximum Oscillation Frequency von Lövblom, R, Flückiger, R, Yuping Zeng, Ostinelli, O, Alt, A R, Benedickter, H, Bolognesi, C R

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(Ga,In)P emitter composition effect on the performance of (Ga,In)P/GaAsSb/InP DHBTs grown by MOCVD von Zeng, Yuping, Lövblom, Rickard, Ostinelli, Olivier, Bolognesi, C. R.

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GaAsSb-Based DHBTs With a Reduced Base Access Distance and f}/f}= 503/780 GHz von Alexandrova, Maria, Flueckiger, Ralf, Lovblom, Rickard, Ostinelli, Olivier, Bolognesi, C. R.

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400-GHz InP/GaAsSb DHBTs With Low-Noise Microwave Performance von Yuping Zeng, Ostinelli, Olivier, Lövblom, Rickard, Alt, Andreas R, Benedickter, Hansruedi, Bolognesi, C R

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Accuracy of Microwave Transistor [Formula Omitted] and [Formula Omitted] Extractions von Teppati, Valeria, Tirelli, Stefano, Lovblom, Rickard, Fluckiger, Ralf, Alexandrova, Maria, Bolognesi, C. R

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Uniform-Base InP/GaInAsSb DHBTs Exhibiting [Formula Omitted] von Fluckiger, Ralf, Lovblom, Rickard, Alexandrova, Maria, Ostinelli, Olivier, Bolognesi, C R

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InP/GaAsSb DHBTs With Simultaneous f/f=428/621 von Lovblom, Rickard, Fluckiger, Ralf, Alexandrova, Maria, Ostinelli, Olivier, Bolognesi, C. R.

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A [Formula Omitted]-Band On-Wafer Active Load-Pull System Based on Down-Conversion Techniques von Teppati, Valeria, Benedickter, Hansruedi, Marti, Diego, Garelli, Marco, Tirelli, Stefano, Lovblom, Rickard, Fluckiger, Ralf, Alexandrova, Maria, Ostinelli, Olivier, Bolognesi, Colombo R

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InP/GaAsSb DHBTs with Simultaneous fT/fMAX = 428/621 GHz von LÖVBLOM, Rickard, FLÜCKIGER, Ralf, ALEXANDROVA, Maria, OSTINELLI, Olivier, BOLOGNESI, C. R

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Uniform-Base InP/GaInAsSb DHBTs Exhibiting fMAX/fT > 635/420 GHz von FLÜCKIGER, Ralf, LÖVBLOM, Rickard, ALEXANDROVA, Maria, OSTINELLI, Olivier, BOLOGNESI, C. R

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Type-II InP/GaAsSb double-heterojunction bipolar transistors with fMAX > 700 GHz von Flückiger, Ralf, Lövblom, Rickard, Alexandrova, Maria, Ostinelli, Olivier, Bolognesi, Colombo R.

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Type-II InP/GaAsSb double-heterojunction bipolar transistors with f MAX > 700 GHz von Flückiger, Ralf, Lövblom, Rickard, Alexandrova, Maria, Ostinelli, Olivier, Bolognesi, Colombo R.

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