Room-temperature 2 μm luminescence from Tm doped silicon light emitting diodes and SOI substrates von Zhou, Shihao, Milosavljević, M., Xia, Xiaohong, Gao, Yun, Lourenço, M.A., Homewood, K.P.

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Semiconducting amorphous FeSi2 layers synthesized by co-sputter deposition von MILOSAVLJEVIC, M, SHAO, G, GWILLIAM, R. M, GAO, Y, LOURENCO, M. A, VALIZADEH, R, COLLIGON, J. S, HOMEWOOD, K. P

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Photoluminescence study of thulium-doped silicon substrates for light emitting diodes von Lourenço, M.A., Opoku, C., Gwilliam, R.M., Homewood, K.P.

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The Effect of Temperature to the Formation of Optically Active Point-defect Complex, the Carbon G-centre in Pre-amorphised and Non-amorphised Silicon von Berhanuddin, D D, Lourenço, M A, Gwilliam, R M, Homewood, K P

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Engineering of boron-induced dislocation loops for efficient room-temperature silicon light-emitting diodes von Milosavljević, M., Shao, G., Lourenco, M. A., Gwilliam, R. M., Homewood, K. P.

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Structures and light emission properties of nanocrystalline FeSi2/Si formed by ion beam synthesis with a metal vapor vacuum arc ion source von WONG, S. P, CHOW, C. F, ROLLER, Judith, CHONG, Y. T, LI, Q, LOURENCO, M. A, HOMEWOOD, K. P

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Structures and light emission properties of nanocrystalline FeSi 2/Si formed by ion beam synthesis with a metal vapor vacuum arc ion source von Wong, S.P., Chow, C.F., Roller, Judith, Chong, Y.T., Li, Q., Lourenco, M.A., Homewood, K.P.

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Crystalline-silicon-based infra-red LEDs and routes to laser diodes von Lourenço, M.A., Homewood, K.P.

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G-Centre Formation and Behavior in a Silicon on Insulator Platform by Carbon Ion Implantation and Proton Irradiation von Berhanuddin, D.D., Razak, N.E.A., Lourenço, M.A., Majlis, B.Y., Homewood, K.P.

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Ion beam synthesized silicides: growth, characterization and devices von Homewood, K.P, Reeson, K.J, Gwilliam, R.M, Kewell, A.K, Lourenço, M.A, Shao, G, Chen, Y.L, Sharpe, J.S, McKinty, C.N, Butler, T

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Electroluminescence properties of Si MOS structures with incorporation of FeSi2 precipitates formed by iron implantation von Chow, C.F., Wong, S.P., Gao, Y., Ke, N., Li, Q., Cheung, W.Y., Lourenco, M.A., Homewood, K.P.

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28pYF-6 Investigation of silicon-based light emitting diode material von Prins, A.D., Ishibashi, Y., Sasahara, S., Nakahara, J., Lourenco, M.A., Gwilliam, R.M., Kobayashi, T., Nagata, A., Homewood, K.P.

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Semiconducting amorphous FeSi 2 layers synthesized by co-sputter deposition von Milosavljević, M, Shao, G, Gwilliam, R.M, Gao, Y, Lourenco, M.A, Valizadeh, R, Colligon, J.S, Homewood, K.P

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Electroluminescence properties of Si MOS structures with incorporation of FeSi 2 precipitates formed by iron implantation von Chow, C.F., Wong, S.P., Gao, Y., Ke, N., Li, Q., Cheung, W.Y., Lourenco, M.A., Homewood, K.P.

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Nano-engineered silicon light emitting diodes and optically active waveguides von Homewood, K.P., Lourenço, M.A., Gwilliam, R.M.

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Boron engineered dislocation loops for efficient room temperature silicon light emitting diodes von Lourenço, M.A., Milosavljević, M., Shao, G., Gwilliam, R.M., Homewood, K.P.

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Deep level transient spectroscopy of CdS/CdTe thin film solar cells von Lourenço, M. A., Yew, Yip Kum, Homewood, K. P., Durose, K., Richter, H., Bonnet, D.

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Dislocation engineered silicon light emitting devices von Lourenço, M.A., Milosavljević, M., Shao, G., Gwilliam, R.M., Homewood, K.P.

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Optimising dislocation-engineered silicon light-emitting diodes von MILOSAVLJEVIC, M, LOURENCO, M. A, SHAO, G, GWILLIAM, R. M, HOMEWOOD, K. P

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Formation of dislocation loops in silicon by ion irradiation for silicon light emitting diodes von Milosavljević, M., Lourenço, M.A., Shao, G., Gwilliam, R.M., Homewood, K.P.

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