A two subcell equivalent solar cell model for III–V triple junction solar cells under spectrum and temperature variations von Fernández, Eduardo F., Siefer, Gerald, Almonacid, F., Loureiro, A.J. García, Pérez-Higueras, P.

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Benchmarking of Scaled InGaAs Implant-Free NanoMOSFETs von Kalna, K., Seoane, N., Garcia-Loureiro, A.J., Thayne, I.G., Asenov, A.

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Modified octree mesh generation for Manhattan type structures with narrow layers applied to semiconductor devices von Aldegunde, M., Pombo, Juan J., García-Loureiro, A.J.

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Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshes von Aldegunde, M., Seoane, Natalia, García-Loureiro, A.J., Kalna, K.

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3D Parallel Simulations of Fluctuation Effects in pHEMTs von García-Loureiro, A.J., Kalna, K., Asenov, A.

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Impact of series and shunt resistances in amorphous silicon thin film solar cells von Fortes, M., Comesaña, E., Rodriguez, J.A., Otero, P., Garcia-Loureiro, A.J.

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Efficiency increase of a-Si:H solar cells with optimized front and back contact textures von Fortes, M., Belfar, A., Garcia-Loureiro, A.J.

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Impact of intrinsic parameter fluctuations on the performance of HEMTs studied with a 3D parallel drift-diffusion simulator von Seoane, N., García-Loureiro, A.J., Kalna, K., Asenov, A.

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Updated insight into the use of μc-Si:H n-layers in a-Si:H solar cells von Fortes, M., Comesaña, E., Rodriguez, J.A., Otero, P., Garcia-Loureiro, A.J.

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Two-dimensional simulation study of textured p-i-n a-Si:H solar cells with p-a-SiC:H and p-nc-Si:H window layers von Fortes, M., Belfar, A., Garcia-Loureiro, A.J.

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Increasing the Locality of Iterative Methods and Its Application to the Simulation of Semiconductor Devices von Pichel, J.C., Heras, D.B., Cabaleiro, J.C., García-Loureiro, A.J., Rivera, F.F.

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Collection length and optical path improvement in a-Si:H solar cells von Fortes, M., Comesaña, E., Rodriguez, J.A., Otero, P., Garcia-Loureiro, A.J.

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Simulation of the spin polarization and the charge transport in Zener tunnel junctions based on ferromagnetic GaAs and ZnO von Comesaña, E., Aldegunde, M., Garcia-Loureiro, A.J.

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3D Monte Carlo simulation of Tri-Gate MOSFETs using tetrahedral finite elements von Aldegunde, M., Garcia-Loureiro, A.J., Martinez, A., Kalna, K.

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Numerical simulation of a ferromagnetic spin-polarised diode von Comesana, E., Gehring, G.A., Garcia-Loureiro, A.J., Aldegunde, M.

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Mesh Generation for the "Atomistic" Simulation of Variability in InGaAs Implant-Free NanoMOSFETs von Aldegunde, M., Garcia-Loureiro, A.J., Seoane, N., Asenov, A., Kalna, K.

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Implementation of a quantum corrections in a 3D parallel drift-diffusion simulator von Garcia-Loureiro, A.J., Kalna, K., Asenov, A.

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Mesh Generation for "Atomistic" Simulation of Nanometre Scale MOSFETs von Aldegunde, M., Garcia-Loureiro, A.J., Kalna, K., Asenov, A.

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Modelling of new SiGeC HBTs von Nunez, J.M., Lopez-Gonzalez, J.M., Garcia-Loureiro, A.J.

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3D parallel simulation of InP/InGaAs HBT von Garcia-Loureiro, A.J., Lopez-Gonzalez, J.M.

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