Recent advances in silicon carbide MOSFET power devices von Stevanovic, L.D., Matocha, K.S., Losee, P.A., Glaser, J.S., Nasadoski, J.J., Arthur, S.D.

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DC and Transient Performance of 4H-SiC Double-Implant MOSFETs von Losee, Pete A., Matocha, Kevin, Arthur, Stephen D., Nasadoski, Jeffrey, Stum, Zachary, Garrett, Jerome L., Schutten, Michael, Dunne, Greg, Stevanovic, Ljubisa

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6kV 4H-SiC BJTs with Specific On-resistance Below the Unipolar Limit using a Selectively Grown Base Contact Process von Balachandran, S., Li, C., Losee, P.A., Bhat, I.B., Chow, T.P.

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lOkV 4H-SiC PiN Diodes Designed for Improved Switching Performance using Emitter Injection Control von Losee, P.A., Li, C., Wang, Y., Sharma, S.K., Chow, T.P., Bhat, I.B., Stahlbush, R.E., Gutmann, R.J.

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High Voltage 4H-SiC Epitaxial Emitter BJTs using a Self-aligned Selectively Re-grown Base Contact von Balachandran, S., Li, C., Losee, P.A., Chow, T. P., Bhat, I., Agarwal, A.

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Degraded blocking performance of 4H-SiC rectifiers under high dV/dt conditions von Losee, P.A., Zhu, L., Chow, T.P., Bhat, I.B., Gutmann, R.J.

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Simulation, characterization and design of epitaxial emitter NPN 4H-SiC BJTs for amplifier applications von Losee, P.A., Gutmann, R.J., Chow, T.P., Ryu, S.-H., Agarwal, A.K., Palmour, J.W.

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High Resolution Ultrasound for Noninvasive Monitoring of Graft Vasculopathy after Human Upper Extremity Transplantation: 2310 von Keith, J., Fletcher, D., Kim, K., Brandacher, G., Shores, J., Lee, W. P.A., Losee, J., Gorantla, V. S.

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High Resolution Ultrasound for Noninvasive Monitoring of Graft Vasculopathy after Human Upper Extremity Transplantation: 2310 von Keith, J., Fletcher, D., Kim, K., Brandacher, G., Shores, J., Lee, W. P.A., Losee, J., Gorantla, V. S.

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The Pittsburgh Upper Extremity Transplant Program - Early and Emerging Outcomes in Five Recipients with a Novel Immunomodulatory Protocol: 2309 von Gorantla, V. S., Spiess, A., Imbriglia, J., Goitz, R., Demetris, A., Lunz, J., Foust, D., Shores, J., Brandacher, G., Lee, W. P.A., Losee, J.

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Analysis of Al/Ti, Al/Ni multiple and triple layer contacts to p-type 4H-SiC von Jennings, M.R., Pérez-Tomás, A., Davies, M., Walker, D., Zhu, L., Losee, P., Huang, W., Balachandran, S., Guy, O.J., Covington, J.A., Chow, T.P., Mawby, P.A.

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The surface structure and associated rehydration phenomena observed on [formula omitted] von Losee, D.B., Kassman, A.J., Wilson, P.A.

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