Three-Dimensional Composition Analysis of SnAg Solder Bumps Using Ultraviolet Femtosecond Laser Ablation Ionization Mass Spectrometry von Cedeño López, A, Grimaudo, V, Riedo, A, Tulej, M, Wiesendanger, R, Lukmanov, R, Moreno-García, P, Lörtscher, E, Wurz, P, Broekmann, P

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Comprehensive modeling of Joule heated cantilever probes von Spieser, M., Rawlings, C., Lörtscher, E., Duerig, U., Knoll, A. W.

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Si-InAs heterojunction Esaki tunnel diodes with high current densities von Björk, M. T., Schmid, H., Bessire, C. D., Moselund, K. E., Ghoneim, H., Karg, S., Lörtscher, E., Riel, H.

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Characterization of femtosecond laser ablation processes on as-deposited SnAg solder alloy using laser ablation ionization mass spectrometry von López, A. Cedeño, Grimaudo, V., Riedo, A., Tulej, M., Wiesendanger, R., Lukmanov, R., Moreno-García, P., Lörtscher, E., Wurz, P., Broekmann, P.

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Silicon Nanowire Tunnel FETs: Low-Temperature Operation and Influence of High- k Gate Dielectric von Moselund, K. E., Bjork, M. T., Schmid, H., Ghoneim, H., Karg, S., Lortscher, E., Riess, W., Riel, H.

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Interface State Density of Single Vertical Nanowire MOS Capacitors von Mensch, P., Moselund, K. E., Karg, S., Lortscher, E., Bjork, M. T., Riel, H.

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Inducing a direct-to-pseudodirect bandgap transition in wurtzite GaAs nanowires with uniaxial stress von Signorello, G., Lörtscher, E., Khomyakov, P.A., Karg, S., Dheeraj, D.L., Gotsmann, B., Weman, H., Riel, H.

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Direct experimental observation of stacking fault scattering in highly oriented pyrolytic graphite meso-structures von Koren, E., Knoll, A. W., Lörtscher, E., Duerig, U.

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Meso-scale measurement of the electrical spreading resistance in highly anisotropic media von Koren, E., Knoll, A. W., Lörtscher, E., Duerig, U.

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Comparison of VLS grown Si NW tunnel FETs with different gate stacks von Moselund, K.E., Ghoneim, H., Bjork, M.T., Schmid, H., Karg, S., Lortscher, E., Riess, W., Riel, H.

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VLS-grown silicon nanowire tunnel FET von Moselund, K.E., Ghoneim, H., Bjork, M.T., Schmid, H., Karg, S., Lortscher, E., Riess, W., Riel, H.

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Solid-state diffusion as an efficient doping method for silicon nanowires and nanowire field effect transistors von Moselund, K E, Ghoneim, H, Schmid, H, Björk, M T, Lörtscher, E, Karg, S, Signorello, G, Webb, D, Tschudy, M, Beyeler, R, Riel, H

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Silicon Nanowire Tunnel FETs: Low-Temperature Operation and Influence of High- [Formula Omitted] Gate Dielectric von Moselund, K. E, Bjork, M. T, Schmid, H, Ghoneim, H, Karg, S, Lortscher, E, Riess, W, Riel, H

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Direct electrode-electrode tunneling in break-junction measurements of molecular conductance von Gotsmann, B., Riel, H., Lörtscher, E.

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C-V measurements of single vertical nanowire capacitors von Mensch, P., Moselund, K. E., Karg, S., Lortscher, E., Bjork, M. T., Schmid, H., Riel, H.

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A Single-Molecule Switch and Memory Element von Lörtscher, E, Tour, J M, Ciszek, J W, Riel, H

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Interface engineering for the suppression of ambipolar behavior in Schottky-barrier MOSFETs von Ghoneim, H., Knoch, J., Riel, H., Webb, D., Bjork, M.T., Karg, S., Lortscher, E., Schmid, H., Riess, W.

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Suppression of ambipolar behavior in metallic source/drain metal-oxide-semiconductor field-effect transistors von Ghoneim, H., Knoch, J., Riel, H., Webb, D., Björk, M. T., Karg, S., Lörtscher, E., Schmid, H., Riess, W.

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Measurements and Simulations of Electro-Magnetic Field Emissions of the Swiss Federal Railway Rolling Stock von Lörtscher, M, Lörtscher, E, Voegeli, H, Röösli, M

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Silicon Nanowire Tunnel FETs: Low-Temperature Operation and Influence of High-κ Gate Dielectric von MOSELUND, K. E, BJÖRK, M. T, SCHMID, H, GHONEIM, H, KARG, S, LÖRTSCHER, E, RIESS, W, RIEL, H

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