Failure mechanism of avalanche photodiodes in the presence of water vapor von Comizzoli, R.B., Osenbach, J.W., Crane, G.R., Peins, G.A., Siconolfi, D.J., Lorimor, O.G., Chang, C.-C.

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High speed, ion bombarded InGaAs photoconductors von DOWNEY, P. M, MARTIN, R. J, NAHORY, R. E, LORIMOR, O. G

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Liquid phase epitaxy processes for GaP led's von Saul, R.H., Lorimor, O.G.

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Degradation of bulk electroluminescent efficiency in Zn, O-doped GaP LED's von Ralston, J.M., Lorimor, O.G.

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Minority-carrier lifetimes and luminescence efficiencies in nitrogen-doped GaP von Dapkus, P.D., Hackett, W.H., Lorimor, O.G., Kammlott, G.W., Haszko, S.E.

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Hemispherical GaP:N green electroluminescent diodes von Bachrach, R.Z., Dixon, R.W., Lorimor, O.G.

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High capacity liquid phase epitaxy apparatus utilizing thin melts von Lorimor, O.G., Saul, R.H., Dawson, L.R., Paola, C.R.

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Zinc diffused GaP red electroluminescent diodes with 1.5 per cent external quantum efficiency von Casey, H.C., Luther, L.C., Lorimor, O.G., Jordan, A.S., Kowalchik, M.

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