320 x 256 avalanche array photodetector on the basis of ternary alloys of the group with an InGaAs absorbing layer and an InAlAs barrier layer von Iakovleva, N.I, Boltar, K.O, Sednev, M.V, Lopukhin, A.A, Korotaev, E.D

Volltext

Long-Wave Infrared Focal Plane Arrays Based on a Quantum-Well AlGaAs/GaAs Structure with 384 x 288 Elements von Boltar, K.O, Burlakov, I.D, Vlasov, P.V, Lopukhin, A.A, Chaliy, V.P, Katsavets, N.I

Volltext

Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate von Burlakov, I. D., Boltar, K. O., Vlasov, P. V., Lopukhin, A. A., Toropov, A. I., Zhuravlev, K. S., Fadeev, V. V.

Volltext

Focal plane arrays mesastructures formation by ion-beam etching von Sednev, M. V., Boltar, K. O., Sharonov, Yu. P., Lopukhin, A. A.

Volltext