Deep p-Ring Trench Termination: An Innovative and Cost-Effective Way to Reduce Silicon Area von Antoniou, M., Lophitis, N., Udrea, F., Rahimo, M., Vemulapati, U., Corvasce, C., Badstuebner, U.

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Validated physical models and parameters of bulk 3C-SiC aiming for credible technology computer aided design (TCAD) simulation von Arvanitopoulos, A, Lophitis, N, Gyftakis, K N, Perkins, S, Antoniou, M

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Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors von Antoniou, M., Lophitis, N., Bauer, F., Nistor, I., Bellini, M., Rahimo, M., Amaratunga, G., Udrea, F.

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Optimal Gate Commutated Thyristor Design for Bi-Mode Gate Commutated Thyristors Underpinning High, Temperature Independent, Current Controllability von Lophitis, N., Antoniou, M., Vemulapati, U., Vobecky, J., Badstuebner, U., Wikstroem, T., Stiasny, T., Rahimo, M., Udrea, F.

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New Bi-Mode Gate-Commutated Thyristor Design Concept for High-Current Controllability and Low ON-State Voltage Drop von Lophitis, N., Antoniou, M., Vemulapati, U., Arnold, M., Nistor, I., Vobecky, J., Rahimo, M., Udrea, F.

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Performance Improvement of >10kV SiC IGBTs with Retrograde p-Well von Antoniou, Marina, Lophitis, Neo, Udrea, Florin, Perkins, Samuel, Trajkovic, Tatjana, Tiwari, Amit

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Investigations of Short Circuit Robustness of SiC IGBTs with Considerations on Physics Properties and Design von Zhang, Lu Yang, Udrea, Florin, Renz, A. Benjamin, Ortiz-Gonzalez, Jose, Antoniou, Marina, Mawby, Philip Andrew, Dai, Tian Xiang, Shah, Vishal Ajit, Gammon, Peter Michael, Lophitis, Neophytos, Tiwari, Amit

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The Destruction Mechanism in GCTs von Lophitis, N., Antoniou, M., Udrea, F., Bauer, F. D., Nistor, I., Arnold, M., Wikstrom, T., Vobecky, J.

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Turn-off failure mechanism in large area IGCTs von Lophitis, N., Antoniou, M., Udrea, F., Wikstrom, T., Nistor, I.

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Experimentally validated three dimensional GCT wafer level simulations von Lophitis, N., Antoniou, M., Udrea, F., Nistor, I., Arnold, M., Wikstrom, T., Vobecky, J.

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Deep p-Ring Trench Termination: An Innovative and Cost-Effective Way to Reduce Silicon Area von Antoniou, M, Lophitis, N, Udrea, F, Rahimo, M, Vemulapati, U, Corvasce, C, Badstuebner, U

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Validated physical models and parameters of bulk 3C-SiC aiming for credible technology computer aided design (TCAD) simulation von Arvanitopoulos, A, Lophitis, N, Gyftakis, KN, Perkins, S, Antoniou, M

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Optimal gate commutated thyristor design for bi-mode gate commutated thyristors underpinning high, temperature independent, current controllability von Lophitis, N, Antoniou, M, Vemulapati, U, Vobecky, J, Badstuebner, U, Wikstroem, T, Stiasny, T, Rahimo, M, Udrea, F

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A New Approach for Broken Rotor Bar Detection in Induction Motors Using Frequency Extraction in Stray Flux Signals von Panagiotou, Panagiotis A., Arvanitakis, Ioannis, Lophitis, Neophytos, Antonino-Daviu, Jose A., Gyftakis, Konstantinos N.

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On the Suitability of 3C-Silicon Carbide as an Alternative to 4H-Silicon Carbide for Power Diodes von Arvanitopoulos, Anastasios E., Antoniou, Marina, Perkins, Samuel, Jennings, Mike, Guadas, Manuel Belanche, Gyftakis, Konstantinos N., Lophitis, Neophytos

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On the broken rotor bar diagnosis using time–frequency analysis: ‘Is one spectral representation enough for the characterisation of monitored signals?’ von Panagiotou, Panagiotis A, Arvanitakis, Ioannis, Lophitis, Neophytos, Antonino-Daviu, Jose A, Gyftakis, Konstantinos N

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FEM approach for diagnosis of induction machines' non-adjacent broken rotor bars by short-time Fourier transform spectrogram von Panagiotou, Panagiotis A, Arvanitakis, Ioannis, Lophitis, Neophytos, Antonino-Daviu, Jose A, Gyftakis, Konstantinos N

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A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes von Arvanitopoulos, Anastasios E., Antoniou, Marina, Jennings, Mike R., Perkins, Samuel, Gyftakis, Konstantinos N., Mawby, Philip, Lophitis, Neophytos

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