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    10kV+ Rated SiC n-IGBTs: Novel Collector-Side Design Approach Breaking the Trade-Off between dV/dt and Device Efficiency

    10kV+ Rated SiC n-IGBTs: Novel Collector-Side Design Approach Breaking the Trade-Off between dV/dt and Device Efficiency von Evans, Paul, Antoniou, Marina, Lophithis, Neophytos, Empringham, Lee, Udrea, Florin, Mawby, Philip Andrew, Almpanis, Ioannis, Gammon, Peter Michael

    Veröffentlicht in Key engineering materials

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