Carbon-Isovalent Dopant Pairs in Silicon: A Density Functional Theory Study von Christopoulos, Stavros-Richard G., Sgourou, Efstratia N., Chroneos, Alexander, Londos, Charalampos A.

Volltext

Comparative Study of Oxygen- and Carbon-Related Defects in Electron Irradiated Cz–Si Doped with Isovalent Impurities von Londos, Charalampos A., Chroneos, Alexander, Sgourou, Efstratia N., Panagiotidis, Ioannis, Angeletos, Theoharis, Potsidi, Marianna S.

Volltext

The CiCs(SiI)n Defect in Silicon from a Density Functional Theory Perspective von Christopoulos, Stavros-Richard, Sgourou, Efstratia, Vovk, Ruslan, Chroneos, Alexander, Londos, Charalampos

Volltext

The Interstitial Carbon-Dioxygen Center in Irradiated Silicon von Potsidi, Marianna S., Kuganathan, Navaratnarajah, Christopoulos, Stavros-Richard G., Chroneos, Alexander, Angeletos, Theoharis, Sarlis, Nicholas V., Londos, Charalampos A.

Volltext

The effect of neutron irradiation on oxygen aggregation processes in Si material treated under hydrostatic pressure von Londos, Charalampos A., Andrianakis, Andreas, Misiuk, Andrzej

Volltext

IR studies of oxygen-related and carbon-related defects in Sn-doped silicon von Londos, Charalampos A., Andrianakis, Andreas, Aliprantis, Dimitris, Sgourou, Efstratia N., Ohyama, Hidenori

Volltext

Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface properties von Kropman, Daniel, Kärner, Tiit, Dolgov, Sergei, Heinmaa, Ivo, Laas, Tõnu, Londos, Charalampos A.

Volltext

The C i C s (Si I ) n Defect in Silicon from a Density Functional Theory Perspective von Christopoulos, Stavros-Richard G, Sgourou, Efstratia N, Vovk, Ruslan V, Chroneos, Alexander, Londos, Charalampos A

Volltext

Electrical properties of multiple-layer structures formed by implantation of nitrogen or oxygen and annealed under high pressure von Antonova, Irina V., Misiuk, Andrzej, Londos, Charalampos A.

Volltext

Electrical properties of multiple-layer structures formed by implantationof nitrogen or oxygen and annealed under high pressure von Antonova, Irina V., Misiuk, Andrzej, Londos, Charalampos A.

Volltext

Interaction of point defects with impurities in the Si‐SiO 2 system and its influence on the interface properties von Kropman, Daniel, Kärner, Tiit, Dolgov, Sergei, Heinmaa, Ivo, Laas, Tõnu, Londos, Charalampos A.

Volltext

Point Defects Generation Kinetics in the Si-SiO2 System and its Influence on the Interface Properties von Londos, Charalamos A., Kärner, Tiit, Dolgov, Sergei, Heinmaa, Ivo, Kropman, Daniel

Volltext

Dedicated in the Memory of Professor Ulrich Gösele. Interaction of Point Defects with Impurities in the Si-SiO2 System and its Influence on the Interface Properties von Kropman, Daniel, Kärner, Tiit, Dolgov, Sergei, Heinmaa, Ivo, Londos, C.A.

Volltext

Impact of Hydrostatic Pressure Applied at Annealing on Homogeneity of Si-Ge Single Crystals von Surma, Barbara, Kucytowski, Jacek, Londos, Charalampos A., Wieteska, Krzysztof, Bak-Misiuk, Jadwiga, Misiuk, Andrzej, Abrosimov, Nikolai V., Wierzchowski, Wojciech

Volltext

Interaction of Point Defects with Impurities in the Si-SiO2 System and its Influence on the Interface Properties von Mellikov, Enn, Laas, Tõnu, Londos, Charalampos A., Kärner, Tiit, Misiuk, Andrzej, Heinmaa, Ivo, Kropman, Daniel

Volltext

Method for detection the overradiation with the silicon neutrons von B K-MISIUK JADWIGA, SURMA BARBARA, MISIUK ANDRZEJ, JUNG WOJCIECH, LONDOS CHARALAMPOS A

Volltext bestellen

Method for detection the overradiation with the silicon neutrons von B K-MISIUK JADWIGA, SURMA BARBARA, MISIUK ANDRZEJ, JUNG WOJCIECH, LONDOS CHARALAMPOS A

Volltext bestellen

Electrical Characteristics of SOI-Like Structures Formed in Nitrogen or Oxygen Implanted Silicon under High Pressure von Antonova, Irina, Misiuk, Andrzej, Londos, Charalampos Andrzej

Volltext