Isovalent dopant-vacancy clusters in silicon: Density functional theory calculations von Kuganathan, N., Sgourou, E.N., Chroneos, A., Londos, C.A.

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Impact of isovalent doping on the formation of the CiOi(SiI)n defects in silicon von Christopoulos, S.-R.G., Sgourou, E.N., Vovk, R.V., Chroneos, A., Londos, C.A.

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Impact of isovalent doping on the formation of the C i O i (Si I ) n defects in silicon von Christopoulos, S.-R.G., Sgourou, E.N., Vovk, R.V., Chroneos, A., Londos, C.A.

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Substitutional carbon-dioxygen center in irradiated silicon von Potsidi, M.S., Kuganathan, N., Chroneos, A., Christopoulos, S.-R.G., Angeletos, T., Sarlis, N.V., Londos, C.A.

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The COV defect in neutron irradiated silicon: An infrared spectroscopy study von Aliprantis, D.N., Antonaras, G., Angeletos, T., Sgourou, E.N., Chroneos, A., Londos, C.A.

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A-centers and isovalent impurities in germanium: Density functional theory calculations von Chroneos, A., Londos, C.A., Bracht, H.

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Effects of germanium doping on the behavior of oxygen and carbon impurities and impurity-related complexes in Si von Londos, C.A., Andrianakis, A., Emtsev, V.V., Oganesyan, G.A., Ohyama, H.

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The effect of germanium doping on the evolution of defects in silicon von Londos, C.A., Andrianakis, A., Emtsev, V.V., Oganesyan, G.A., Ohyama, H.

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The influence of thermal treatments under hydrostatic pressure prior to irradiation on the annealing characteristics of the VO defect in Si von Londos, C.A., Antonaras, G.D., Potsidi, M.S., Misiuk, A.

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Isochronal annealing studies of carbon-related defects in irradiated Si von Londos, C.A., Potsidi, M.S., Antonaras, G.D., Andrianakis, A.

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Carbon-related complexes in neutron-irradiated silicon von Londos, C.A., Potsidi, M.S., Stakakis, E.

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Stress-dependent transformation of interstitial oxygen in processed Ge-doped Cz-Si von Misiuk, A., Londos, C.A., Bak-Misiuk, J., Yang, Deren, Jung, W., Prujszczyk, M.

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Thermally induced defects in silicon irradiated with fast neutrons von Misiuk, A., Wierzchowski, W., Wieteska, K., Romanowski, P., Bak-Misiuk, J., Prujszczyk, M., Londos, C.A., Graeff, W.

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Trivacancy-oxygen complex in silicon: Local vibrational mode characterization von Murin, L.I., Svensson, B.G., Lindström, J.L., Markevich, V.P., Londos, C.A.

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IR studies of oxygen–vacancy defects in electron-irradiated Ge-doped Si von Londos, C.A., Andrianakis, A., Aliprantis, D., Ohyama, H., Emtsev, V.V., Oganesyan, G.A.

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Dedicated in the Memory of Professor Ulrich Gösele. Interaction of Point Defects with Impurities in the Si-SiO2 System and its Influence on the Interface Properties von Kropman, Daniel, Kärner, Tiit, Dolgov, Sergei, Heinmaa, Ivo, Londos, C.A.

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Defects in Czochralski-grown Si–Ge annealed under high hydrostatic pressure von Misiuk, A., Wierzchowski, W., Surma, B., Wnuk, A., Bak-Misiuk, J., Wieteska, K., Barcz, A., Andrianakis, A., Londos, C.A., Yang, D., Prujszczyk, M., Graeff, W.

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Novel aspects of oxygen diffusion in silicon von Binns, M.J., Londos, C.A., McQuaid, S.A., Newman, R.C., Semaltianos, N.G., Tucker, J.H.

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Defect Structure of Nitrogen Doped Czochralski Silicon Annealed under Enhanced Pressure von Misiuk, A., Wierzchowski, W., Wieteska, K., Londos, C.A., Andrianakis, A., Bak-Misiuk, J., Yang, D., Surma, B.

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An in-depth investigation into the temperature dependence of the mass spectra of an Au82Si18 liquid metal field emitter von MAIR, G. L. R, BISCHOFF, L, LONDOS, C. A, GANETSOS, T, AKHMADALIEV, C, AIDINIS, C. J

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