Tunable laser based on a semiconductor optical amplifier of red spectral region von Andreeva, E.V., Anikeev, A.S., Il'chenko, S.N., Lobintsov, A.A., Chamorovskii, A.Yu, Shidlovskii, V.R., Shramenko, M.V., Yakubovich, S.D.

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Semiconductor lasers with a continuous tuning range above in the nearest IR spectral region von Kostin, Yu.O., Ladugin, M.A., Lobintsov, A.A., Marmalyuk, A.A., Chamorovsky, A.Yu, Shramenko, M.V., Yakubovich, S.D.

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Broadband semiconductor optical amplifiers of the spectral range von Andreeva, E.V., Il'chenko, S.N., Ladugin, M.A., Lobintsov, A.A., Marmalyuk, A.A., Shramenko, M.V., Yakubovich, S.D.

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Triple integrated laser - thyristor von Bagaev, T.A., Ladugin, M.A., Padalitsa, A.A., Marmalyuk, A.A., Kurnyavko, Yu.V., Lobintsov, A.V., Danilov, A.I., Sapozhnikov, S.M., Krichevskii, V.V., Konyaev, V.P., Simakov, V.A., Slipchenko, S.O., Podoskin, A.A., Pikhtin, N.A.

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Double integrated laser-thyristor von Bagaev, T.A., Ladugin, M.A., Padalitsa, A.A., Marmalyuk, A.A., Kurnyavko, Yu.V., Lobintsov, A.V., Danilov, A.I., Sapozhnikov, S.M., Krichevskii, V.V., Zverkov, M.V., Konyaev, V.P., Simakov, V.A., Slipchenko, S.O., Podoskin, A.A., Pikhtin, N.A.

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AlGaInAs/InP semiconductor lasers with an increased electron barrier von Marmalyuk, A.A., Ivanov, A.V., Kurnosov, V.D., Kurnosov, K.V., Ladugin, M.A., Lobintsov, A.V., Padalitsa, A.A., Romantsevich, V.I., Ryaboshtan, Yu.L., Sapozhnikov, S.M., Svetogorov, V.N., Simakov, V.A.

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The influence of waveguide doping on the output characteristics of AlGaAs/GaAs lasers von Telegin, K.Yu, Ladugin, M.A., Andreev, A.Yu, Yarotskaya, I.V., Volkov, N.A., Padalitsa, A.A., Lobintsov, A.V., Aparnikov, A.N., Sapozhnikov, S.M., Marmalyuk, A.A.

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Laser diode arrays based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 62 von Ladugin, M.A., Marmalyuk, A.A., Padalitsa, A.A, Telegin, K.Yu, Lobintsov, A.V., Sapozhnikov, S.M., Danilov, A.I., Podkopaev, A.V., Simakov, V.A.

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Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70 von Ladugin, M.A., Marmalyuk, A.A., Padalitsa, A.A., Bagaev, T.A., Andreev, A.Yu, Telegin, K.Yu, Lobintsov, A.V., Davydova, E.I., Sapozhnikov, S.M., Danilov, A.I., Podkopaev, A.V., Ivanova, E.B., Simakov, V.A.

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Compact laser diode array based on epitaxially integrated AlGaAs/GaAs heterostructures von Ladugin, M.A., Bagaev, T.A., Marmalyuk, A.A., Koval', Yu.P., Konyaev, V.P., Sapozhnikov, S.M., Lobintsov, A.V., Simakov, V.A.

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Metalorganic vapour phase epitaxy of GaAs/AlGaAs nanoheterostructures for a quantum cascade laser von Marmalyuk, A. A., Padalitsa, A. A., Ladugin, M. A., Gorlachuk, P. V., Yarotskaya, I. V., Andreev, A. Yu, Bagaev, T. A., Lobintsov, A. V., Kurnyavko, Yu. V., Sapozhnikov, S. M., Danilov, A. I., Telegin, K. Yu, Simakov, V. A., Zasavitskii, I. I., Zarubin, S. S.

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On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range von Slipchenko, S. O., Podoskin, A. A., Vasil’eva, V. V., Pikhtin, N. A., Rozhkov, A. V., Gorbatyuk, A. V., Zolotarev, V. V., Veselov, D. A., Jabotinskii, A. V., Petukhov, A. A., Tarasov, I. S., Bagaev, T. A., Zverkov, M. V., Konyaev, V. P., Kurniavko, Y. V., Ladugin, M. A., Lobintsov, A. V., Marmalyuk, A. A., Padalitsa, A. A., Simakov, V. A.

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Quantum cascade laser based on As heteropair grown by MOCVD von Zasavitskii, I.I., Zubov, A.N., Andreev, A.Yu, Bagaev, T.A., Gorlachuk, P.V., Ladugin, M.A., Padalitsa, A.A., Lobintsov, A.V., Sapozhnikov, S.M., Marmalyuk, A.A.

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MOUNTING PLATE OF LASER DIODE von BELANOVSKIJ E.A, BORODKIN A.A, SAPOZHNIKOV S.M, KOBJAKOVA M.SH, KOVAL' JU.P, MOROZJUK A.M, LOBINTSOV A.V

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