Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications von Chevalier, Pascal, Jungemann, C., Lovblom, Rickard, Maneux, Cristell, Ostinelli, Olivier, Pawlak, Andreas, Rinaldi, Niccolo, Rucker, Holger, Wedel, Gerald, Zimmer, Thomas, Schroter, Michael, Bolognesi, Colombo R., d'Alessandro, Vincenzo, Alexandrova, Maria, Bock, Josef, Flickiger, Ralf, Fregonese, Sebastien, Heinemann, Bernd

Volltext

400-GHz InP/GaAsSb DHBTs With Low-Noise Microwave Performance von Yuping Zeng, Ostinelli, Olivier, Lövblom, Rickard, Alt, Andreas R, Benedickter, Hansruedi, Bolognesi, C R

Volltext

InP/GaAsSb DHBTs Fabricated in a Low-Temperature Teflon Planarization Process von Fluckiger, R., Lovblom, R., Ostinelli, O., Benedickter, H., Bolognesi, C. R.

Volltext

A W -Band On-Wafer Active Load-Pull System Based on Down-Conversion Techniques von Teppati, Valeria, Benedickter, Hansruedi, Marti, Diego, Garelli, Marco, Tirelli, Stefano, Lovblom, Rickard, Fluckiger, Ralf, Alexandrova, Maria, Ostinelli, Olivier, Bolognesi, Colombo R.

Volltext

Accuracy of Microwave Transistor f and f Extractions von Teppati, Valeria, Tirelli, Stefano, Lovblom, Rickard, Fluckiger, Ralf, Alexandrova, Maria, Bolognesi, C. R.

Volltext

Emitter Size Effect in GaAsSb-Based DHBTs With AlInP and GaInP Emitters von Lovblom, Rickard, Fluckiger, Ralf, Ostinelli, Olivier, Alexandrova, Maria, Bolognesi, C. R.

Volltext

InP/GaAsSb DHBTs With 500-GHz Maximum Oscillation Frequency von Lövblom, R, Flückiger, R, Yuping Zeng, Ostinelli, O, Alt, A R, Benedickter, H, Bolognesi, C R

Volltext

InP/GaAsSb DHBTs with Simultaneous fT/fMAX = 428/621 GHz von LÖVBLOM, Rickard, FLÜCKIGER, Ralf, ALEXANDROVA, Maria, OSTINELLI, Olivier, BOLOGNESI, C. R

Volltext

Uniform-Base InP/GaInAsSb DHBTs Exhibiting f/f>635/420 von Fluckiger, Ralf, Lovblom, Rickard, Alexandrova, Maria, Ostinelli, Olivier, Bolognesi, C. R.

Volltext

Uniform-Base InP/GaInAsSb DHBTs Exhibiting fMAX/fT > 635/420 GHz von FLÜCKIGER, Ralf, LÖVBLOM, Rickard, ALEXANDROVA, Maria, OSTINELLI, Olivier, BOLOGNESI, C. R

Volltext

Type-II InP/GaAsSb double-heterojunction bipolar transistors with fMAX > 700 GHz von Flückiger, Ralf, Lövblom, Rickard, Alexandrova, Maria, Ostinelli, Olivier, Bolognesi, Colombo R.

Volltext

Type-II InP/GaAsSb double-heterojunction bipolar transistors with f MAX > 700 GHz von Flückiger, Ralf, Lövblom, Rickard, Alexandrova, Maria, Ostinelli, Olivier, Bolognesi, Colombo R.

Volltext

(Ga,In)P emitter composition effect on the performance of (Ga,In)P/GaAsSb/InP DHBTs grown by MOCVD von Zeng, Yuping, Lövblom, Rickard, Ostinelli, Olivier, Bolognesi, C. R.

Volltext

GaAsSb-Based DHBTs With a Reduced Base Access Distance and f}/f}= 503/780 GHz von Alexandrova, Maria, Flueckiger, Ralf, Lovblom, Rickard, Ostinelli, Olivier, Bolognesi, C. R.

Volltext

Accuracy of Microwave Transistor [Formula Omitted] and [Formula Omitted] Extractions von Teppati, Valeria, Tirelli, Stefano, Lovblom, Rickard, Fluckiger, Ralf, Alexandrova, Maria, Bolognesi, C. R

Volltext

Uniform-Base InP/GaInAsSb DHBTs Exhibiting [Formula Omitted] von Fluckiger, Ralf, Lovblom, Rickard, Alexandrova, Maria, Ostinelli, Olivier, Bolognesi, C R

Volltext

InP/GaAsSb DHBTs With Simultaneous f/f=428/621 von Lovblom, Rickard, Fluckiger, Ralf, Alexandrova, Maria, Ostinelli, Olivier, Bolognesi, C. R.

Volltext

A [Formula Omitted]-Band On-Wafer Active Load-Pull System Based on Down-Conversion Techniques von Teppati, Valeria, Benedickter, Hansruedi, Marti, Diego, Garelli, Marco, Tirelli, Stefano, Lovblom, Rickard, Fluckiger, Ralf, Alexandrova, Maria, Ostinelli, Olivier, Bolognesi, Colombo R

Volltext