Fast quantum-dot saturable absorber for passive mode-locking of solid-State lasers von Rafailov, E.U., White, S.J., Lagatsky, A.A., Miller, A., Sibbett, W., Livshits, D.A., Zhukov, A.E., Ustinov, V.M.

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Observation of zero linewidth enhancement factor at excited state band in quantum dot laser von Zubov, F.I, Maximov, M.V, Moiseev, E.I, Savelyev, A.V, Shernyakov, Y.M, Livshits, D.A, Kryzhanovskaya, N.V, Zhukov, A.E

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Continuous-wave lasing at 100°C in 1.3 µm quantum dot microdisk diode laser von Kryzhanovskaya, N.V, Moiseev, E.I, Kudashova, Yu. V, Zubov, F.I, Lipovskii, A.A, Kulagina, M.M, Troshkov, S.I, Zadiranov, Yu. M, Livshits, D.A, Maximov, M.V, Zhukov, A.E

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Quantum-dot-based saturable absorber with p-n junction for mode-locking of solid-state lasers von Lagatsky, A.A., Rafailov, E.U., Sibbett, W., Livshits, D.A., Zhukov, A.E., Ustinov, V.M.

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Temperature-Dependent Small-Signal Analysis of High-Speed High-Temperature Stable 980-nm VCSELs von Mutig, A., Fiol, G., Potschke, K., Moser, P., Arsenijevic, D., Shchukin, V.A., Ledentsov, N.N., Mikhrin, S.S., Krestnikov, I.L., Livshits, D.A., Kovsh, A.R., Hopfer, F., Bimberg, D.

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20 Gb/s 85 ^C Error-Free Operation of VCSELs Based on Submonolayer Deposition of Quantum Dots von Hopfer, F., Mutig, A., Fiol, G., Kuntz, M., Shchukin, V.A., Haisler, V.A., Warming, T., Stock, E., Mikhrin, S.S., Krestnikov, I.L., Livshits, D.A., Kovsh, A.R., Bornholdt, C., Lenz, A., Eisele, H., Dahne, M., Ledentsov, N.N., Bimberg, D.

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Amplification of femtosecond pulses over by 18 dB in a quantum-dot semiconductor optical amplifier von Rafailov, E.U., Loza-Alvarez, P., Sibbett, W., Sokolovskii, G.S., Livshits, D.A., Zhukov, A.E., Ustinov, V.M.

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Electronically Controlled Pulse Duration Passively Mode-Locked Cr : Forsterite Laser von Zolotovskaya, S.A., Wilcox, K.G., Abdolvand, A., Livshits, D.A., Rafailov, E.U.

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High power all-quantum-dot-based external cavity modelocked laser von MCROBBIE, A. D, CATALUNA, M. A, ZOLOTOVSKAYA, S. A, LIVSHITS, D. A, SIBBETT, W, RAFAILOV, E. U

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120°C 20 Gbit/s operation of 980 nm VCSEL von MUTIG, A, FIOL, G, HOPFER, F, BIMBERG, D, MOSER, P, ARSENIJEVIC, D, SHCHUKIN, V. A, LEDENTSOV, N. N, MIKHRIN, S. S, KRESTNIKOV, I. L, LIVSHITS, D. A, KOVSH, A. R

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Model of mode-locked quantum-well semiconductor laser based on InGaAs InGaAlAs InP heterostructure von Rybalko, D A, Polukhin, I S, Solov'ev, Y V, Mikhailovskiy, G A, Odnoblyudov, M A, Gubenko, A.E., Livshits, D.A., Firsov, A.N., Kirsyaev, A.N., Efremov, A.A., Bougrov, V E

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InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with enhanced optical gain von Kovsh, A.R., Maleev, N.A., Zhukov, A.E., Mikhrin, S.S., Vasil’ev, A.P., Semenova, E.A., Shernyakov, Yu.M., Maximov, M.V., Livshits, D.A., Ustinov, V.M., Ledentsov, N.N., Bimberg, D., Alferov, Zh.I.

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Microdisk injection lasers for the 1.27-µm spectral range von Kryzhanovskaya, N.V, Maximov, M.V, Blokhin, S.A, Bobrov, M.A, Kulagina, M.M, Troshkov, S.I, Zadiranov, Yu. M, Lipovskii, A.A, Moiseev, E.I, Kudashova, Yu.V, Livshits, D.A, Ustinov, V.M, Zhukov, A.E

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Stable mode-locked operation up to 80 °C from an InGaAs quantum-dot laser von Cataluna, M.A, Rafailov, E.U, McRobbie, A.D, Sibbett, W, Livshits, D.A, Kovsh, A.R

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Features of simultaneous ground- and excited-state lasing in quantum dot lasers von Zhukov, A. E., Maximov, M. V., Shernyakov, Yu. M., Livshits, D. A., Savelyev, A. V., Zubov, F. I., Klimenko, V. V.

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Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate von Zhukov, A.E., Kovsh, A.R., Ustinov, V.M., Shernyakov, Yu.M., Mikhrin, S.S., Maleev, N.A., Kondrat'eva, E.Yu, Livshits, D.A., Maximov, M.V., Volovik, B.V., Bedarev, D.A., Musikhin, Yu.G., Ledentsov, N.N., Kop'ev, P.S., Alferov, Z.I., Bimberg, D.

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Spectral dependence of the linewidth enhancement factor in quantum dot lasers von Zubov, F. I., Shernyakov, Yu. M., Maximov, M. V., Zhukov, A. E., Livshits, D. A., Payusov, A. S., Nadtochiy, A. M., Savelyev, A. V., Kryzhanovskaya, N. V., Gordeev, N. Yu

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Effect of active-region modulation doping on simultaneous ground-state and excited-state lasing in quantum-dot lasers von Shernyakov, Yu. M., Maksimov, M. V., Zhukov, A. E., Savelyev, A. V., Korenev, V. V., Zubov, F. I., Gordeev, N. Yu, Livshits, D. A.

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Stable mode-locked operation up to 80 /spl deg/C from an InGaAs quantum-dot laser von Cataluna, M.A., Rafailov, E.U., McRobbie, A.D., Sibbett, W., Livshits, D.A., Kovsh, A.R.

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A single-spatial-mode semiconductor laser based on InAs/InGaAs quantum dots with a diffraction filter of optical modes von Gordeev, N. Yu, Novikov, I. I., Kuznetsov, A. M., Shernyakov, Yu. M., Maximov, M. V., Zhukov, A. E., Chunareva, A. V., Payusov, A. S., Livshits, D. A., Kovsh, A. R.

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