4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot von Bugu, Sinan, Nishiyama, Shimpei, Kato, Kimihiko, Liu, Yongxun, Murakami, Shigenori, Mori, Takahiro, Ferrus, Thierry, Kodera, Tetsuo

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Demonstration, analysis, and device design considerations for independent DG MOSFETs von Masahara, M., Yongxun Liu, Sakamoto, K., Endo, K., Matsukawa, T., Ishii, K., Sekigawa, T., Yamauchi, H., Tanoue, H., Kanemaru, S., Koike, H., Suzuki, E.

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Single-Electron Transistor Operation of a Physically Defined Silicon Quantum Dot Device Fabricated by Electron Beam Lithography Employing a Negative-Tone Resist von NISHIYAMA, Shimpei, KATO, Kimihiko, LIU, Yongxun, MIZOKUCHI, Raisei, YONEDA, Jun, KODERA, Tetsuo, MORI, Takahiro

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RF reflectometry for readout of charge transition in a physically defined p-channel MOS silicon quantum dot von Bugu, Sinan, Nishiyama, Shimpei, Kato, Kimihiko, Liu, Yongxun, Mori, Takahiro, Kodera, Tetsuo

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Fabrication of nano-capillary emitter arrays for ionic liquid electrospray thrusters von Suzuki, Kanta, Nagao, Masayoshi, Liu, Yongxun, Murakami, Katsuhisa, Khumpuang, Sommawan, Hara, Shiro, Takao, Yoshinori

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High-speed parallel robot dynamic modelling based on PLC von Liu, Yongxun, Zhao, Jingyun, Yao, Yonggang, Cao, Qiuxia, Cui, Jichao

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An experimental study of solid source diffusion by spin on dopants and its application for minimal silicon-on-insulator CMOS fabrication von Liu, Yongxun, Koga, Kazuhiro, Khumpuang, Sommawan, Nagao, Masayoshi, Matsukawa, Takashi, Hara, Shiro

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Fluctuation Analysis of Parasitic Resistance in FinFETs With Scaled Fin Thickness von Matsukawa, T., Endo, K., Ishikawa, Y., Yamauchi, H., O'uchi, S., Yongxun Liu, Tsukada, J., Ishii, K., Sakamoto, K., Suzuki, E., Masahara, M.

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Investigation of piezoresistive effect in p-channel metal-oxide-semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective m... von Liu, Yongxun, Tanaka, Hiroyuki, Umeyama, Norio, Koga, Kazuhiro, Khumpuang, Sommawan, Nagao, Masayoshi, Matsukawa, Takashi, Hara, Shiro

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Impact of residual defects caused by extension ion implantation in FinFETs on parasitic resistance and its fluctuation von Matsukawa, Takashi, Liu, Yongxun, Mori, Takahiro, Morita, Yukinori, Otsuka, Shintaro, O'uchi, Shin-ichi, Fuketa, Hiroshi, Migita, Shinji, Masahara, Meishoku

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Fabrication of FinFETs by Damage-Free Neutral-Beam Etching Technology von Endo, K., Shuichi Noda, Masahara, M., Kubota, T., Ozaki, T., Samukawa, S., Yongxun Liu, Ishii, K., Ishikawa, Y., Sugimata, E., Matsukawa, T., Takashima, H., Yamauchi, H., Suzuki, E.

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Decomposition of On-Current Variability of nMOS FinFETs for Prediction Beyond 20 nm von Matsukawa, T., Liu, Y., O'uchi, S., Endo, K., Tsukada, J., Yamauchi, H., Ishikawa, Y., Ota, H., Migita, S., Morita, Y., Mizubayashi, W., Sakamoto, K., Masahara, M.

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Epitaxial growth of Ge thin film on Si (001) by DC magnetron sputtering von Otsuka, Shintaro, Mori, Takahiro, Morita, Yukinori, Uchida, Noriyuki, Liu, Yongxun, O'uchi, Shin-ichi, Fuketa, Hiroshi, Migita, Shinji, Masahara, Meishoku, Matsukawa, Takashi

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Suppression of tunneling rate fluctuations in tunnel field-effect transistors by enhancing tunneling probability von Mori, Takahiro, Migita, Shinji, Fukuda, Koichi, Asai, Hidehiro, Morita, Yukinori, Mizubayashi, Wataru, Liu, Yongxun, O uchi, Shin-ichi, Fuketa, Hiroshi, Otsuka, Shintaro, Yasuda, Tetsuji, Masahara, Meishoku, Ota, Hiroyuki, Matsukawa, Takashi

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Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on performance of tunnel field-effect transistors von Morita, Yukinori, Mori, Takahiro, Migita, Shinji, Mizubayashi, Wataru, Fukuda, Koichi, Matsukawa, Takashi, Endo, Kazuhiko, O’uchi, Shin-ichi, Liu, Yongxun, Masahara, Meishoku, Ota, Hiroyuki

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Variability Origins of Parasitic Resistance in FinFETs With Silicided Source/Drain von Matsukawa, T., Yongxun Liu, Endo, K., Tsukada, J., Ishikawa, Y., Yamauchi, H., O'uchi, S., Sakamoto, K., Masahara, M.

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Impact of extension implantation conditions of fin field-effect transistors on gate-induced drain leakage von Matsukawa, Takashi, Liu, Yongxun, Mori, Takahiro, Morita, Yukinori, O uchi, Shinichi, Otsuka, Shintaro, Migita, Shinji, Masahara, Meishoku

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A highly threshold Voltage-controllable 4T FinFET with an 8.5-nm-thick Si-fin channel von Yongxun Liu, Masahara, M., Ishii, K., Sekigawa, T., Takashima, H., Yamauchi, H., Suzuki, E.

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Threshold-Voltage Reduction of FinFETs by Ta/Mo Interdiffusion Dual Metal-Gate Technology for Low-Operating-Power Application von Matsukawa, T., Endo, K., Yongxun Liu, O'uchi, S., Ishikawa, Y., Yamauchi, H., Tsukada, J., Ishii, K., Masahara, M., Sakamoto, K., Suzuki, E.

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Bias temperature instability in tunnel field-effect transistors von Mizubayashi, Wataru, Mori, Takahiro, Fukuda, Koichi, Ishikawa, Yuki, Morita, Yukinori, Migita, Shinji, Ota, Hiroyuki, Liu, Yongxun, O uchi, Shinichi, Tsukada, Junichi, Yamauchi, Hiromi, Matsukawa, Takashi, Masahara, Meishoku, Endo, Kazuhiko

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