Treffer 1 - 8 von 8 für Suche 'Liu, Yongxum', Suchdauer: 0,60s Treffer weiter einschränken
  1. 1
    Experimental Evaluation of Effects of Channel Doping on Characteristics of FinFETs

    Experimental Evaluation of Effects of Channel Doping on Characteristics of FinFETs von Endo, K., Ishikawa, Y., Liu Yongxum, Masahara, M., Matsukawa, T., O'uchi, S.-I., Ishii, K., Yamauchi, H., Tsukada, J., Suzuki, E.

    Veröffentlicht in IEEE electron device letters

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  2. 2
    Enhancement of FinFET performance using 25-nm-thin sidewall spacer grown by atomic layer deposition

    Enhancement of FinFET performance using 25-nm-thin sidewall spacer grown by atomic layer deposition von Endo, Kazuhiko, Ishikawa, Yuki, Matsukawa, Takashi, Liu, Yongxum, O’uchi, Shin-ichi, Sakamoto, Kunihiro, Tsukada, Junichi, Yamauchi, Hiromi, Masahara, Meishoku

    Veröffentlicht in Solid-state electronics

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  3. 3
    Enhancing Noise Margins of Fin-Type Field Effect Transistor Static Random Access Memory Cell by Using Threshold Voltage-Controllable Flexible-Pass-Gates

    Enhancing Noise Margins of Fin-Type Field Effect Transistor Static Random Access Memory Cell by Using Threshold Voltage-Controllable Flexible-Pass-Gates von Endo, Kazuhiko, O'uchi, Shin-ichi, Ishikawa, Yuki, Liu, Yongxum, Matsukawa, Takashi, Masahara, Meishoku, Sakamoto, Kunihiro, Tsukada, Junichi, Ishii, Kenichi, Yamauchi, Hiromi, Suzuki, Eiichi

    Veröffentlicht in Applied physics express

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  4. 4
    Enhancing noise margins of FinFET SRAM by integrating Vth-controllable flexible-pass-gates

    Enhancing noise margins of FinFET SRAM by integrating Vth-controllable flexible-pass-gates von Endo, K., O'uchi, S.-i., Ishikawa, Y., Yongxum Liu, Matsukawa, T., Masahara, M., Sakamoto, K., Tsukada, J., Ishii, K., Yamauchi, H., Suzuki, E.


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  5. 5
    Enhancement of FinFET performance using 25-nm-thin sidewall spacer grown by atomic layer deposition: Selected Papers from the ESSDERC 2011 Conference

    Enhancement of FinFET performance using 25-nm-thin sidewall spacer grown by atomic layer deposition: Selected Papers from the ESSDERC 2011 Conference von ENDO, Kazuhiko, ISHIKAWA, Yuki, MATSUKAWA, Takashi, YONGXUM LIU, O'UCHI, Shin-Ichi, SAKAMOTO, Kunihiro, TSUKADA, Junichi, YAMAUCHI, Hiromi, MASAHARA, Meishoku

    Veröffentlicht in Solid-state electronics

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  6. 6
    Atomic layer deposition of 25-nm-thin sidewall spacer for enhancement of FinFET performance

    Atomic layer deposition of 25-nm-thin sidewall spacer for enhancement of FinFET performance von Endo, Kazuhiko, Ishikawa, Yuki, Matsukawa, Takashi, Liu, Yongxum, O'uchi, Shin-ichi, Sakamoto, Kunihiro, Tsukada, Junichi, Yamauchi, Hiromi, Masahara, Meishoku


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  7. 7
    Fabrication and Power-Management Demonstration of Four-Terminal FinFETs

    Fabrication and Power-Management Demonstration of Four-Terminal FinFETs von Endo, Kazuhiko, Liu, Yongxum, Masahara, Meishoku, Matsukawa, Takashi, O'uchi, Shin'Ichi, Suzuki, Eiichi


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  8. 8
    Fabrication and Power-Management Demonstration of Four-Terminal Separated-Gate FinFETs

    Fabrication and Power-Management Demonstration of Four-Terminal Separated-Gate FinFETs von Endo, Kazuhiko, Liu, Yongxum, Masahara, Meishoku, Matsukawa, Takashi, O'uchi, Shin'Ichi, Suzuki, Eiichi


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