Near Surface Changes Due to 700 keV Si+ Irradiation of Titanium Silicon Carbide von Qi, Qiang, Liu, Chaozhuo Z., King, Bruce V., O'Connor, Daryl J., Kisi, Erich H., Wang, Kung, Shi, Liqun Q.

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Near Surface Changes Due to 700 keV Si super(+) Irradiation of Titanium Silicon Carbide von Qi, Qiang, Liu, Chaozhuo Z, King, Bruce V, O'Connor, Daryl J, Kisi, Erich H, Wang, Kung, Shi, Liqun Q

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Near Surface Changes Due to 700ￂ keV Si+ Irradiation of Titanium Silicon Carbide von Qi, Qiang, Liu, Chaozhuo Z, King, Bruce V, O'Connor, Daryl J, Kisi, Erich H, Wang, Kung, Shi, Liqun Q

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Helium-charged titanium films deposited by direct current magnetron sputtering von Shi, Liqun, Liu, Chaozhuo, Xu, Shilin, Zhou, Zhu Ying

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Universal analog signal acquisition circuit von LIU QING, LIU RENTONG, CUI MANYUAN, LIU WEI, ZHAO DAN, CHEN YUDA, GUO CHAOZHUO, XU HAOSHU, WANG GUANGNING, WU FEIYUE, SHEN JUNTAO, LI YAJUN, LI ZE

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