In vitro inhibitory effect of zingerone on TNFα-stimulated fibroblast-like synoviocytes von Mao, Yuhang, Liu, Changze, Liu, Dan, Wei, Xianhua, Tan, Xin, Zhou, Junnan, Yu, Xiaolu, Liu, Mei

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Experimental study on the oxide trap coupling effect in metal oxide semiconductor field effect transistors with HfO2 gate dielectrics von Ren, Pengpeng, Wang, Runsheng, Jiang, Xiaobo, Qiu, Yingxin, Liu, Changze, Huang, Ru

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Negative-Bias Temperature Instability in Gate-All-Around Silicon Nanowire MOSFETs: Characteristic Modeling and the Impact on Circuit Aging von Liu, Changze, Yu, Tao, Wang, Runsheng, Zhang, Liangliang, Huang, Ru, Kim, Dong-Won, Park, Donggun, Wang, Yangyuan

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Inflection Points in GAA NS-FET to C-FET Scaling Considering Impact of DTCO Boosters von Yakimets, Dmitry, Bhuwalka, Krishna K., Wu, Hao, Rzepa, Gerhard, Karner, Markus, Liu, Changze

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Deep H-GCN: Fast Analog IC Aging-Induced Degradation Estimation von Chen, Tinghuan, Sun, Qi, Zhan, Canhui, Liu, Changze, Yu, Huatao, Yu, Bei

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Optimization and Benchmarking FinFETs and GAA Nanosheet Architectures at 3-nm Technology Node: Impact of Unique Boosters von Bhuwalka, Krishna K., Wu, Hao, Zhao, Wenbo, Rzepa, Gerhard, Baumgartner, Oskar, Benistant, Francis, Chen, Yijian, Liu, Changze

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Peimine suppresses collagen-induced arthritis, activated fibroblast-like synoviocytes and TNFα-induced MAPK pathways von Zhou, Junnan, Mao, Yuhang, Shi, Xiaotian, Zhang, Yudie, Yu, Xiaolu, Liu, Xuan, Diao, Li, Yang, Xue, Liu, Changze, Liu, Dan, Tan, Xin, Liu, Mei

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Observation of strong reflection of electron waves exiting a ballistic channel at low energy von Vaz, Canute I., Liu, Changze, Campbell, Jason P., Ryan, Jason T., Southwick, Richard G., Gundlach, David, Oates, Anthony S., Huang, Ru, Cheung, Kin. P.

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Deep understanding of AC RTN in MuGFETs through new characterization method and impacts on logic circuits von Jibin Zou, Runsheng Wang, Mulong Luo, Ru Huang, Nuo Xu, Pengpeng Ren, Changze Liu, Weize Xiong, Jianping Wang, Jinhua Liu, Jingang Wu, Waisum Wong, Shaofeng Yu, Hanming Wu, Shiuh-Wuu Lee, Yangyuan Wang

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Design Decoupling of Inner-and Outer-Gate Lengths in Nanosheet FETs for Ultimate Scaling von Bhuwalka, Krishna K., Baumgartner, Oskar, Wu, Hao, Hou, Lei, Yakimets, Dmitry, Karner, Markus, Liu, Changze

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Characterization and analysis of gate-all-around Si nanowire transistors for extreme scaling von Ru Huang, Runsheng Wang, Jing Zhuge, Changze Liu, Tao Yu, Liangliang Zhang, Xin Huang, Yujie Ai, Jinbin Zou, Yuchao Liu, Jiewen Fan, Huailin Liao, Yangyuan Wang

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Exploring GAA-Nanosheet, Forksheet and GAA-Forksheet Architectures: a TCAD-DTCO Study at 90 nm & 120 nm Cell Height von Gaddemane, Gautam, Schuddinck, Pieter, Bhuwalka, Krishna, Rzepa, Gerhard, Mirabelli, Gioele, Gupta, Anshul, Bommels, Jurgen, Matagne, Philippe, Yakimets, Dmitry, Wu, Hao, Hou, Lei, Hellings, Geert, Liu, Changze

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Characteristics of Gate Current Random Telegraph Signal Noise in SiON/HfO2/TaN p-Type Metal--Oxide--Semiconductor Field-Effect Transistors under Negative Bias Temperature Instabili... von Zhang, Liangliang, Liu, Changze, Wang, Runsheng, Huang, Ru, Yu, Tao, Zhuge, Jing, Kirsch, Paul, Tseng, Hsing-Huang, Wang, Yangyuan

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New observations on the AC random telegraph noise (AC RTN) in nano-MOSFETs von Runsheng Wang, Jibin Zou, Xiaoqing Xu, Changze Liu, Jinhua Liu, Hanming Wu, Yangyuan Wang, Ru Huang

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Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits von Guo, Shaofeng, Wang, Runsheng, Ren, Pengpeng, Liu, Changze, Luo, Mulong, Jiang, Xiaobo, Wang, Yangyuan, Huang, Ru

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New insights into oxide traps characterization in gate-all-around nanowire transistors with TiN metal gates based on combined Ig-Id RTS technique von Liangliang Zhang, Jing Zhuge, Runsheng Wang, Ru Huang, Changze Liu, Dake Wu, Zhaoyi Kang, Dong-Won Kim, Donggun Park, Yangyuan Wang

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Top-down fabrication of vertical silicon nano-rings based on Poisson diffraction von Ai, Yujie, Huang, Ru, Hao, Zhihua, Wang, Runsheng, Liu, Changze, Fan, Chunhui, Wang, Yangyuan

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On the AC random telegraph noise (RTN) in MOS devices: An improved multi-phonon based model von Nanbo Gong, Runsheng Wang, Changze Liu, Jibin Zou, Ru Huang

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Self-heating effects in gate-all-around silicon nanowire MOSFETs: Modeling and analysis von Xin Huang, Tianwei Zhang, Rusheng Wang, Changze Liu, Yuchao Liu, Ru Huang

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Investigations on the gate oxide dependence of AC RTN characteristics in nanoscaled MOSFETs: SiON vs. HfO2 von Nanbo Gong, Yingxin Qiu, Runsheng Wang, Jibin Zou, Changze Liu, Ru Huang

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