InGaAs/InP DHBTs with emitter and base defined through electron-beam lithography for reduced C sub(c)band increased RF cut-off frequency von Lobisser, Evan, Rode, Johann C, Jain, Vibhor, Chiang, Han-Wei, Baraskar, Ashish, Mitchell, William J, Thibeault, Brian J, Rodwell, Mark JW, Urteaga, Miguel, Loubychev, Dmitri, Snyder, Andrew, Wu, Ying, Fastenau, Joel M, Liu, Amy WK

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