Characterization of homoepitaxial p -type ZnO grown by molecular beam epitaxy von Look, D. C., Reynolds, D. C., Litton, C. W., Jones, R. L., Eason, D. B., Cantwell, G.

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Role of near-surface states in ohmic-Schottky conversion of Au contacts to ZnO von Mosbacker, H. L., Strzhemechny, Y. M., White, B. D., Smith, P. E., Look, D. C., Reynolds, D. C., Litton, C. W., Brillson, L. J.

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Electrical properties of bulk ZnO von Look, D.C., Reynolds, D.C., Sizelove, J.R., Jones, R.L., Litton, C.W., Cantwell, G., Harsch, W.C.

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Exciton–polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO von Chichibu, S F, Uedono, A, Tsukazaki, A, Onuma, T, Zamfirescu, M, Ohtomo, A, Kavokin, A, Cantwell, G, Litton, C W, Sota, T, Kawasaki, M

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Polarized photoreflectance spectra of excitonic polaritons in a ZnO single crystal von Chichibu, S. F., Sota, T., Cantwell, G., Eason, D. B., Litton, C. W.

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Brillouin scattering study of ZnO von Azuhata, T., Takesada, M., Yagi, T., Shikanai, A., Chichibu, SF, Torii, K., Nakamura, A., Sota, T., Cantwell, G., Eason, D. B., Litton, C. W.

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Valence-band ordering in ZnO von Reynolds, D. C., Look, D. C., Jogai, B., Litton, C. W., Cantwell, G., Harsch, W. C.

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Neutral-donor–bound-exciton complexes in ZnO crystals von Reynolds, D. C., Look, D. C., Jogai, B., Litton, C. W., Collins, T. C., Harsch, W., Cantwell, G.

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Strong biexcitonic effects and exciton-exciton correlations in ZnO von Hazu, K., Sota, T., Suzuki, K., Adachi, S., Chichibu, SF, Cantwell, G., Eason, D. B., Reynolds, D. C., Litton, C. W.

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Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy von Hamdani, F., Botchkarev, A., Kim, W., Morkoç, H., Yeadon, M., Gibson, J. M., Tsen, S.-C. Y., Smith, David J., Reynolds, D. C., Look, D. C., Evans, K., Litton, C. W., Mitchel, W. C., Hemenger, P.

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Impact of the k -linear term on nonlinear optical response of the C-exciton manifold in ZnO von Hazu, K., Torii, K., Sota, T., Adachi, S., Chichibu, SF, Cantwell, G., Reynolds, D. C., Litton, C. W.

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Optical properties of ZnO crystals containing internal strains von Reynolds, D.C, Look, D.C, Jogai, B, Jones, R.L, Litton, C.W, Harsch, W, Cantwell, G

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High-quality, melt-grown ZnO single crystals von Reynolds, D. C., Litton, C. W., Look, D. C., Hoelscher, J. E., Claflin, B., Collins, T. C., Nause, J., Nemeth, B.

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Growth of InSb and InAs1-xSbx on GaAs by molecular beam epitaxy von CHYI, J.-I, KALEM, S, KUMAR, N. S, LITTON, C. W, MORKOC, H

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Effect of C ∕ Si ratio on deep levels in epitaxial 4H-SiC von Litton, C. W., Johnstone, D., Akarca-Biyikli, S., Ramaiah, K. S., Bhat, I., Chow, T. P., Kim, J. K., Schubert, E. F.

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Wavefunction Engineering for GaN-Based Quantum Wells and Superlattices von Ram-Mohan, L R, Girgis, A M, Albrecht, J D, Litton, C W, Steiner, T D

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Determination of defect pair orientation in ZnO von REYNOLDS, D. C, LOOK, D. C, JOGAI, B, LITTON, C. W, CANTWELL, G, HARSCH, W. C

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Observation of donor-acceptor pair spectra in the photoluminescence of H- and Zn-implanted ZnO single crystals von Reynolds, D. C., Litton, C. W., Collins, T. C., Hoelscher, J. E., Nause, J.

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Effects of Rapid Thermal Annealing Treatment on the Surface Band Bending of n-type GaN Studied by Surface Potential Electric Force Microscopy von Baski, A.A., Fan, Q., Litton, Cole W., Morkoç, Hadis, Chevtchenko, S.

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High Power Photoconductive Switch of 4H-SiC with Damage-Free Electrodes by Using n+-GaN Subcontact Layer von Litton, Cole W., Fu, Y., Li, G., Leach, J.H., Zhu, K., Ganguly, B., Morkoç, Hadis, Johnstone, D.

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