Modeling Switched Bias Irradiations on Floating Gate Devices: Application to Dosimetry von Sambuco Salomone, L., Garcia-Inza, M., Carbonetto, S., Lipovetzky, J., Redin, E., Faigon, A.

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Analog pile-up circuit technique using a single capacitor for the readout of Skipper-CCD detectors von Sofo Haro, M., Chavez, C., Lipovetzky, J., Alcalde Bessia, F., Cancelo, G., Chierchie, F., Estrada, J., Fernandez Moroni, G., Stefanazzi, L., Tiffenberg, J., Uemura, S.

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High spatial resolution neutron detection technique based on Commercial Off-The-Shelf CMOS image sensors covered with NaGdF_4 nanoparticles von Pérez, M., Martínez, E.D., Lipovetzky, J., Marín, J., Sofo Haro, M., Alcalde Bessia, F., Gómez Berisso, M., Blostein, J.J.

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Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications von Sambuco Salomone, L., Lipovetzky, J., Carbonetto, S. H., García Inza, M. A., Redin, E. G., Campabadal, F., Faigón, A.

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Neutron imaging based on transfer foil activation and COTS CMOS image sensors von Pérez, M., Abbate, O.I., Lipovetzky, J., Alcalde Bessia, F., Sánchez, F.A., Sofo Haro, M., Longhino, J., Gómez Berisso, M., Blostein, J.J.

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Switched Bias Differential MOSFET Dosimeter von Garcia-Inza, M., Carbonetto, S., Lipovetzky, J., Carra, M. J., Sambuco Salomone, L., Redin, E. G., Faigon, A.

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CMOS Differential and Amplified Dosimeter with Field Oxide N-Channel MOSFETs von Carbonetto, S., GarcianInza, M., Lipovetzky, J., Carra, M. J., Redin, E., Sambuco Salomone, L., Faigon, A.

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Deep electron traps in HfO2-based metal-oxide-semiconductor capacitors von Salomone, L. Sambuco, Lipovetzky, J., Carbonetto, S.H., García Inza, M.A., Redin, E.G., Campabadal, F., Faigón, A.

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Extension of the Measurement Range of MOS Dosimeters Using Radiation Induced Charge Neutralization von Faigon, A., Lipovetzky, J., Redin, E., Krusczenski, G.

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Field Oxide n-channel MOS Dosimeters Fabricated in CMOS Processes von Lipovetzky, J., Garcia-Inza, M. A., Carbonetto, S., Carra, M. J., Redin, E., Sambuco Salomone, L., Faigon, A.

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Electrically Erasable Metal-Oxide-Semiconductor Dosimeters von Lipovetzky, J., Redin, E.G., Faigon, A.

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New Fowler-Nordheim Injection, Charge Neutralization, and Gamma Tests on the REM RFT300 RADFET Dosimeter von Lipovetzky, J., Holmes-Siedle, A., Garcia Inza, M., Carbonetto, S., Redin, E., Faigon, A.

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Experimental evidence and modeling of non-monotonic responses in MOS dosimeters von Faigón, A., García Inza, M., Lipovetzky, J., Redin, E., Carbonetto, S., Sambuco Salomone, L., Berbeglia, F.

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Numerical modeling of radiation-induced charge neutralization in MOS devices von Sambuco Salomone, L., Garcia-Inza, M., Carbonetto, S., Lipovetzky, J., Redin, E., Faigón, A.

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Numerical modeling of total dose effects on CD4007 MOSFET during switched-bias irradiation von Sambuco Salomone, L., Garcia-Inza, M., Lipovetzky, J., Cassani, M.V., Redin, E., Faigón, A., Carbonetto, S.

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X-ray characterization of BUSARD chip: A HV-SOI monolithic particle detector with pixel sensors under the buried oxide von Alcalde Bessia, F., Lipovetzky, J., Perić, I.

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High spatial resolution neutron detection technique based on Commercial Off-The-Shelf CMOS image sensors covered with NaGdF4 nanoparticles von Perez, M., Martinez, E. D., Lipovetzky, J., Marin, J., Sofo Haro, M., Alcalde Bessia, F., Gomez Berisso, M., Blostein, J. J.

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Analog pile-up circuit technique using a single capacitor for the readout of Skipper-CCD detectors von Haro, M. Sofo, Chavez, C., Lipovetzky, J., Alcalde Bessia, F., Cancelo, G., Chierchie, F., Estrada, J., Moroni, G. Fernandez, Stefanazzi, L., Tiffenberg, J., Uemura, S.

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Zero Temperature Coefficient Bias in MOS Devices. Dependence on Interface Traps Density, Application to MOS Dosimetry von Carbonetto, S. H., Garcia Inza, Mariano A., Lipovetzky, J., Redin, E. G., Salomone, L. S., Faigon, A.

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Floating Gate PMOS Dosimeters Under Bias Controlled Cycled Measurement von Inza, M G, Lipovetzky, J, Redin, E G, Carbonetto, S, Faigon, A

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