Revisiting MOSFET threshold voltage extraction methods von Ortiz-Conde, Adelmo, García-Sánchez, Francisco J., Muci, Juan, Terán Barrios, Alberto, Liou, Juin J., Ho, Ching-Sung

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Dual polarization for efficient III-nitride-based deep ultraviolet micro-LEDs von Xing, Zhongqiu, Zhou, Yongjie, Zhang, Aoxiang, Qu, Yipu, Wang, Fang, Liou, Juin J., Liu, Yuhuai

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Performance improvement of nitride semiconductor-based deep-ultraviolet laser diodes with superlattice cladding layers von Xu, Yuan, Zhang, Pengfei, Zhang, Aoxiang, Yin, Mengshuang, Wang, Fang, Liou, Juin. J., Liu, Yuhuai

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Optical confinement enhancement of AlGaN-based deep-ultraviolet laser diode by using asymmetrically wide waveguide layers von Xu, Yuan, Jia, Liya, Liu, Linfu, Sang, Xien, Wang, Fang, Liou, Juin. J., Liu, Yuhuai

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An Enhanced MLSCR Structure Suitable for ESD Protection in Advanced Epitaxial CMOS Technology von Du, Feibo, Hou, Fei, Song, Wenqiang, Chen, Ruibo, Liu, Jizhi, Liu, Zhiwei, Liou, Juin J.

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Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility von Yang, Peng, Zha, Jiajia, Gao, Guoyun, Zheng, Long, Huang, Haoxin, Xia, Yunpeng, Xu, Songcen, Xiong, Tengfei, Zhang, Zhuomin, Yang, Zhengbao, Chen, Ye, Ki, Dong-Keun, Liou, Juin J., Liao, Wugang, Tan, Chaoliang

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Compact and Low Leakage Devices for Bidirectional Low-Voltage ESD Protection Applications von Du, Feibo, Qing, Yihong, Hou, Fei, Zou, Kepeng, Song, Wenqiang, Chen, Ruibo, Liu, Jizhi, Chen, Le, Liou, Juin J., Liu, Zhiwei

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RF transistors: Recent developments and roadmap toward terahertz applications von Schwierz, Frank, Liou, Juin J.

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Novel Silicon-Controlled Rectifier (SCR) for High-Voltage Electrostatic Discharge (ESD) Applications von Zhiwei Liu, Liou, J.J., Vinson, J.

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Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications von Zhiwei Liu, Liou, Juin J, Shurong Dong, Yan Han

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Novel Capacitance Coupling Complementary Dual-Direction SCR for High-Voltage ESD von Shurong Dong, Hao Jin, Meng Miao, Jian Wu, Liou, J. J.

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High-Robustness and Low-Capacitance Silicon-Controlled Rectifier for High-Speed I/O ESD Protection von Qiang Cui, Salcedo, J. A., Parthasarathy, S., Yuanzhong Zhou, Liou, J. J., Hajjar, J. J.

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A Review of Core Compact Models for Undoped Double-Gate SOI MOSFETs von Ortiz-Conde, Adelmo, Garcia-Sanchez, Francisco J., Muci, Juan, Malobabic, Slavica, Liou, Juin J.

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Enhanced performance in deep-ultraviolet laser diodes with an undoped BGaN electron blocking layer von Xing, Zhongqiu, Wang, Fang, Wang, Yao, Liou, Juin J., Liu, Yuhuai

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Characteristics of Tunnel Field-effect Transistors under Power-on Electrostatic Discharge and Electrical Overstress Conditions von Yang, Zhaonian, Mao, Pan, Zhang, Yue, Yu, Ningmei, Liou, Juin J.

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Study of ultraviolet light emitting diodes with InGaN quantum dots and lattice matched superlattice electron blocking layers von Zhang, Aoxiang, Yao, Jiayi, Qu, Yipu, Wang, Fang, Liou, Juin J, Liu, Yuhuai

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Optimization of AlGaN-based deep ultraviolet light emitting diodes with superlattice step doped electron blocking layers von Zhang, Aoxiang, Xing, Zhongqiu, Qu, Yipu, Wang, Fang, Liou, Juin J, Liu, Yuhuai

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Optimization of AlGaN-based deep UV LED performance by p-AlInGaN/AlInGaN graded superlattice electron blocking layer von Xu, Yuan, Yin, Mengshuang, Sang, Xien, Wang, Fang, Liou, Juin J., Liu, Yuhuai

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Improving ESD Protection Robustness Using SiGe Source/Drain Regions in Tunnel FET von Yang, Zhaonian, Yang, Yuan, Yu, Ningmei, Liou, Juin J

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The effects of AlGaN quantum barriers on carrier flow in deep ultraviolet nanowire laser diode von Sharif, Muhammad Nawaz, Niass, Mussaab Ibrahiam, Liou, Juin J, Wang, Fang, Liu, Yuhuai

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