Positive bias temperature instability of HfO2-based gate stacks at reduced thermal budget for future CMOS technologies von Claes, D., Franco, J., Collaert, N., Linten, D., Heyns, M.

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Defect profiling in FEFET Si:HfO2 layers von O'Sullivan, B. J., Putcha, V., Izmailov, R., Afanas'ev, V., Simoen, E., Jung, T., Higashi, Y., Degraeve, R., Truijen, B., Kaczer, B., Ronchi, N., McMitchell, S., Banerjee, K., Clima, S., Breuil, L., Van den Bosch, G., Linten, D., Van Houdt, J.

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Investigation of Imprint in FE-HfO₂ and Its Recovery von Higashi, Y., Kaczer, B., Verhulst, A. S., O'Sullivan, B. J., Ronchi, N., McMitchell, S. R. C., Banerjee, K., Piazza, L. Di, Suzuki, M., Linten, D., Van Houdt, J.

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Impact of Charge Trapping and Depolarization on Data Retention Using Simultaneous P-V and I-V in HfO₂-Based Ferroelectric FET von Higashi, Y., Ronchi, N., Kaczer, B., Alam, Md Nur K., O'Sullivan, B. J., Banerjee, K., McMitchell, S. R. C., Breuil, L., Walke, A., Van den Bosch, G., Linten, D., Van Houdt, J.

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Total-Ionizing-Dose Effects in IGZO Thin-Film Transistors von Guo, Zixiang, Li, Kan, Li, Xun, Luo, Xuyi, Zhang, En Xia, Reed, Robert A., Schrimpf, Ronald D., Fleetwood, Daniel M., Chasin, A., Mitard, J., Linten, D.

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Total-Ionizing-Dose Effects in IGZO Thin-Film Transistors With SiO₂ Oxygen-Penetration Layers von Guo, Zixiang, Zhang, En Xia, Chasin, A., Linten, D., Belmonte, A., Kar, G., Reed, Robert A., Schrimpf, Ronald D., Fleetwood, Daniel M.

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Low-frequency noise and defects in copper and ruthenium resistors von Fleetwood, D. M., Beyne, S., Jiang, R., Zhao, S. E., Wang, P., Bonaldo, S., McCurdy, M. W., Tőkei, Zs, DeWolf, I., Croes, Kristof, Zhang, E. X., Alles, M. L., Schrimpf, R. D., Reed, R. A., Linten, D.

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Low-frequency noise assessment of ferro-electric field-effect transistors with Si-doped HfO2 gate dielectric von Simoen, E., O’Sullivan, B. J., Ronchi, N., Van den Bosch, G., Linten, D., Van Houdt, J.

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Geometry Dependence of Total-Dose Effects in Bulk FinFETs von Chatterjee, I., Zhang, E. X., Bhuva, B. L., Reed, R. A., Alles, M. L., Mahatme, N. N., Ball, D. R., Schrimpf, R. D., Fleetwood, D. M., Linten, D., Simoen, E., Mitard, J., Claeys, C.

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X-Ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices von Wang, P. F., Zhang, E. X., Chuang, K. H., Liao, W., Gong, H., Wang, P., Arutt, C. N., Ni, K., Mccurdy, M. W., Verbauwhede, I., Bury, E., Linten, D., Fleetwood, D. M., Schrimpf, R. D., Reed, R. A.

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Laser- and Heavy Ion-Induced Charge Collection in Bulk FinFETs von El-Mamouni, F., Zhang, E. X., Pate, N. D., Hooten, N., Schrimpf, R. D., Reed, R. A., Galloway, K. F., McMorrow, D., Warner, J., Simoen, E., Claeys, C., Griffoni, A., Linten, D., Vizkelethy, G.

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Quantitative retention model for filamentary oxide-based resistive RAM von Degraeve, R., Chen, C.Y., Celano, U., Fantini, A., Goux, L., Linten, D., Kar, G.S.

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Mapping of CMOS FET degradation in bias space—Application to dram peripheral devices von Kaczer, B., Franco, J., Tyaginov, S., Jech, M., Rzepa, G., Grasser, T., O'Sullivan, B. J., Ritzenhaler, R., Schram, T., Spessot, A., Linten, D., Horiguchi, N.

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Heavy-Ion-Induced Current Transients in Bulk and SOI FinFETs von El-Mamouni, F., Zhang, E. X., Ball, D. R., Sierawski, B., King, M. P., Schrimpf, R. D., Reed, R. A., Alles, M. L., Fleetwood, D. M., Linten, D., Simoen, E., Vizkelethy, G.

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A 5-GHz fully integrated ESD-protected low-noise amplifier in 90-nm RF CMOS von Linten, D., Thijs, S., Natarajan, M.I., Wambacq, P., Jeamsaksiri, W., Ramos, J., Mercha, A., Jenei, S., Donnay, S., Decoutere, S.

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Analysis of the Features of Hot-Carrier Degradation in FinFETs von Makarov, A. A., Tyaginov, S. E., Kaczer, B., Jech, M., Chasin, A., Grill, A., Hellings, G., Vexler, M. I., Linten, D., Grasser, T.

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Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs von Tyaginov, S. E., Makarov, A. A., Kaczer, B., Jech, M., Chasin, A., Grill, A., Hellings, G., Vexler, M. I., Linten, D., Grasser, T.

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A Fully Integrated 7.3 kV HBM ESD-Protected Transformer-Based 4.5-6 GHz CMOS LNA von Borremans, J., Thijs, S., Wambacq, P., Rolain, Y., Linten, D., Kuijk, M.

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Impact of Back-Gate Bias and Device Geometry on the Total Ionizing Dose Response of 1-Transistor Floating Body RAMs von Mahatme, N. N., Zhang, E. X., Reed, R. A., Bhuva, B. L., Schrimpf, R. D., Fleetwood, D. M., Linten, D., Simoen, E., Griffoni, A., Aoulaiche, M., Jurczak, M., Groeseneken, G.

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Positive bias temperature instability of HfO2-based gate stacks at reduced thermal budget for future CMOS technologies von Claes, D, Franco, J, Collaert, N, Linten, D, Heyns, M

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