Ion implantation technology for silicon carbide von Hallén, Anders, Linnarsson, Margareta

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Effects of Back Contact Instability on Cu2ZnSnS4 Devices and Processes von Scragg, Jonathan J, Kubart, Tomas, Wätjen, J. Timo, Ericson, Tove, Linnarsson, Margareta K, Platzer-Björkman, Charlotte

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Al Implantation in Sic; Where Will the Ions Come to Rest? von Vines, Lasse, Linnarsson, Margareta K., Hallén, Anders

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A versatile time-of-flight medium-energy ion scattering setup using multiple delay-line detectors von Sortica, Mauricio A., Linnarsson, Margareta K., Wessman, Dan, Lohmann, Svenja, Primetzhofer, Daniel

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Advances in wide bandgap SiC for optoelectronics von Ou, Haiyan, Ou, Yiyu, Argyraki, Aikaterini, Schimmel, Saskia, Kaiser, Michl, Wellmann, Peter, Linnarsson, Margareta K., Jokubavicius, Valdas, Sun, Jianwu, Liljedahl, Rickard, Syväjärvi, Mikael

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Recent Advances in the Doping of 4H-SiC by Channeled Ion Implantation von Linnarsson, Margareta K., Vines, Lasse, Hallén, Anders

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Intentional and Unintentional Channeling during Implantation of p-Dopants in 4H-SiC von Linnarsson, Margareta K., Vines, Lasse, Hallén, Anders

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Channeled Implantations of p-Type Dopants into 4H-SiC at Different Temperatures von Linnarsson, Margareta K., Vines, Lasse, Hallén, Anders, Svensson, Bengt Gunnar

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Improved interface and electrical properties of atomic layer deposited Al2O3/4H-SiC von Suvanam, Sethu Saveda, Usman, Muhammed, Martin, David, Yazdi, Milad. G., Linnarsson, Margareta, Tempez, Agnès, Götelid, Mats, Hallén, Anders

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Surface Erosion of Ion-Implanted 4H-SiC during Annealing with Carbon Cap von Ayedh, Hussein M., Vines, Lasse, Hallén, Anders, Svensson, Bengt Gunnar, Linnarsson, Margareta K.

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Diffusion of Alkali Metals in SiC von Hallén, Anders, Linnarsson, Margareta K.

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Influence of Carbon Cap on Self-Diffusion in Silicon Carbide von Bathen, Marianne Etzelmueller, Linnarsson, Margareta, Ghezellou, Misagh, Ul Hassan, Jawad, Vines, Lasse

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Solar Driven Energy Conversion Applications Based on 3C-SiC von Jokubavicius, Valdas, Hensen, Emiel J.M., Gao, Lu, Booker, Ian, Jansson, Mattias, Ramiro, Iñigo, Yakimova, Rositza, Hofmann, Jan P., Liu, Xin Yu, Syväjärvi, Mikael, Sun, Jian Wu, Wellmann, Peter J., Linnarsson, Margareta K., Martí, Antonio

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Alkali Metal Re-Distribution after Oxidation of 4H-SiC von Hallén, Anders, Vines, Lasse, Linnarsson, Margareta K., Suvanam, Sethu Saveda

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Donor-acceptor-pair emission characterization in N-B doped fluorescent SiC von Ou, Yiyu, Jokubavicius, Valdas, Kamiyama, Satoshi, Liu, Chuan, Berg, Rolf W., Linnarsson, Margareta, Yakimova, Rositza, Syväjärvi, Mikael, Ou, Haiyan

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Polycrystalline SiC as Source Material for the Growth of Fluorescent SiC Layers von Hupfer, Thomas, Jokubavicius, Valdas, Wellmann, Peter J., Linnarsson, Margareta K., Schimmel, Saskia, Ou, Hai Yan, Ou, Yi Yu, Kaiser, Michl, Syväjärvi, Mikael

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Lateral Boron Distribution in Polycrystalline SiC Source Materials von Jokubavicius, Valdas, Syväjärvi, Mikael, Ou, Hai Yan, Linnarsson, Margareta K., Liljedahl, Rickard, Ou, Yi Yu, Wellmann, Peter J., Kaiser, Michl

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Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes von Yakimova, Rositsa, Ivanov, Ivan G., Vines, Lasse, Linnarsson, Margareta K., Gällström, Andreas, Giannazzo, Filippo, Roccaforte, Fabrizio, Wellmann, Peter, Syväjärvi, Mikael, Jokubavicius, Valdas

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Fabrication of Broadband Antireflective Sub-Wavelength Structures on Fluorescent SiC von Jokubavicius, Valdas, Wellmann, Peter J., Linnarsson, Margareta K., Syväjärvi, Mikael, Ou, Hai Yan, Ou, Yi Yu, Kaiser, Michl, Yakimova, Rositza

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Compensation in boron-doped CVD diamond von Gabrysch, Markus, Majdi, Saman, Hallén, Anders, Linnarsson, Margareta, Schöner, Adolf, Twitchen, Daniel, Isberg, Jan

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