High-resolution transmission electron microscopy calibration of critical dimension (CD) reference materials von Allen, R.A., Headley, T.J., Everist, S.C., Ghoshtagore, R.N., Cresswell, M.W., Linholm, L.W.

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Test structures for referencing electrical linewidth measurements to silicon lattice parameters using HRTEM von Allen, R.A., am Ende, B.A., Cresswell, M.W., Murabito, C.E., Headley, T.J., Guthrie, W.F., Linholm, L.W., Ellenwood, C.H., Bogardus, E.H.

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Junction-isolated electrical test structures for critical dimension calibration standards von Allen, R.A., Cresswell, M.W., Linholm, L.W.

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Noncontact critical dimension metrology sensor for chrome photomasks featuring a low-temperature co-fired ceramic technology von Guillaume, N.M.P., Allen, R.A., Cresswell, M.W., Lahti, M., Linholm, L.W., Zaghloul, M.E.

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A new method to measure the distance between graduation lines on graduated scales von Penzes, W.B., Allen, R.A., Cresswell, M.W., Linholm, L.W., Teague, E.C.

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Electrical linewidth test structures patterned in [100] silicon-on-insulator for use as CD standards von Cresswell, M.W., Bonevich, J.E., Allen, R.A., Guillaume, N.M.P., Giannuzzi, L.A., Everist, S.C., Murabito, C.E., Shea, P.J., Linholm, L.W.

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Direct measurements of interfacial contact resistance, end contact resistance, and interfacial contact layer uniformity von Proctor, S.J., Linholm, L.W., Mazer, J.A.

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A new method to measure the distance between graduation lines on graduated scales von Penzes, W.B., Allen, R.A., Cresswell, M.W., Linholm, L.W., Teague, E.C.

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Electrical linewidth standards for advanced lithography characterization von Linholm, L.W., Allen, R.A., Cresswell, M.W., Ghoshtagore, R.N., Dixson, R.G., Villarrubia, J.S.

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Extraction of sheet resistance from four-terminal sheet resistors replicated in monocrystalline films with nonplanar geometries von Cresswell, M.W., Guillaume, N.M.P., Lee, W.E., Allen, R.A., Guthrie, W.F., Ghoshtagore, R.N., Osborne, Z.E., Sullivan, N., Linholm, L.W.

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The enhanced voltage-dividing potentiometer for high-precision feature placement metrology von Allen, R.A., Cresswell, M.W., Ellenwood, C.H., Linholm, L.W.

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Electrical linewidth test structures fabricated in monocrystalline films for reference-material applications von Cresswell, M.W., Allen, R.A., Guthrie, W.F., Sniegowski, J.J., Ghoshtagore, R.N., Linholm, L.W.

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A direct measurement of interfacial contact resistance von Proctor, S.J., Linholm, L.W.

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Hybrid optical-electrical overlay test structure von Cresswell, M.W., Allen, R.A., Linholm, L.W., Guthrie, W.F., Penzes, W.B., Gurnell, A.W.

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Increasing profitability and improving semiconductor manufacturing throughput using expert systems von Khera, D., Cresswell, M.W., Linholm, L.W., Ramanathan, G., Buzzeo, J., Nagarajan, A.

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New test structure for nanometer-level overlay and feature-placement metrology von Cresswell, M.W., Allen, R.A., Linholm, L.W., Ellenwood, C.H., Penzes, W.B., Teague, E.C.

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An optimized output stage for MOS integrated circuits von Linholm, L.W.

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A directed-graph classifier of semiconductor wafer-test patterns von Cresswell, M.W., Khera, D., Linholm, L.W., Schuster, C.E.

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Comments on "An optimized output stage for MOS integrated circuits" [with reply] von Jaeger, R.C., Linholm, L.W.

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A machine-learning classification approach for IC manufacturing control based on test structure measurements von Zaghloul, M.E., Khera, D., Linholm, L.W., Reeve, C.P.

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