Strain-compensated GaAs1−yPy GaAs1−zBiz GaAs1−yPy quantum wells for laser applications von Kim, H, Forghani, K, Guan, Y, Luo, G, Anand, A, Morgan, D, Kuech, T F, Mawst, L J, Lingley, Z R, Foran, B J, Sin, Y

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Bismuth Particle Formation in Annealed Dilute GaAs i-x-y P y Bi x Alloys von Lingley, Z. R., Foran, B., Brodie, M., Sin, Y., Wells, N.P., Moss, S. C., Forghani, K., Guan, Y., Mawst, L., Kim, H., Kim, T.-H., Kuech, T. F.

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Strain-compensated GaAs 1− y P y /GaAs 1− z Bi z /GaAs 1− y P y quantum wells for laser applications von Kim, H, Forghani, K, Guan, Y, Luo, G, Anand, A, Morgan, D, Kuech, T F, Mawst, L J, Lingley, Z R, Foran, B J, Sin, Y

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(Invited) Dilute-Nitride-Antimonide Materials Grown by MOVPE for Multi-Junction Solar Cell Application von Mawst, Luke J, Kim, T. W., Kim, H., Kim, Y., Kim, K., Lee, J. J., Kuech, Thomas F, Lingley, Z. R., LaLumondiere, S. D., Sin, Y., Lotshaw, W. T., Moss, S. C.

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(Invited) Dilute-Nitride-Antimonide Materials Grown by MOVPE for Multi-Junction Solar Cell Application von Mawst, Luke J, Kim, T. W., Kim, H., Kim, Y., Kim, K., Lee, J. J., Kuech, Thomas F, Lingley, Z. R., LaLumondiere, S. D., Sin, Y., Lotshaw, W. T., Moss, S. C.

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