The VO2 defect in silicon von Lindström, J.L., Murin, L.I., Svensson, B.G., Markevich, V.P., Hallberg, T.

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Defect engineering in Czochralski silicon by electron irradiation at different temperatures von Lindström, J.L, Murin, L.I, Hallberg, T, Markevich, V.P, Svensson, B.G, Kleverman, M, Hermansson, J

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Interaction between self-interstitials and the oxygen dimer in silicon von Lindström, J.L., Hallberg, T., Hermansson, J., Murin, L.I., Komarov, B.A., Markevich, V.P., Kleverman, M., Svensson, B.G.

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Vibrational absorption from vacancy-oxygen-related complexes (VO, V2O, VO2) in irradiated silicon von Lindström, J.L, Murin, L.I, Markevich, V.P, Hallberg, T, Svensson, B.G

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Oxygen loss and thermal double donor formation in germanium von Litvinov, V.V., Murin, L.I., Markevich, V.P., Peaker, A.R., Lindström, J.L.

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Isotopic effects on vibrational modes of thermal double donors in Si and Ge von Murin, L.I., Lindström, J.L., Markevich, V.P., Hallberg, T., Litvinov, V.V., Coutinho, J., Jones, R., Briddon, P.R., Öberg, S.

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Over-coordinated oxygen in the interstitial carbon–oxygen complex von Coutinho, J, Jones, R, Briddon, P.R, Öberg, S, Murin, L.I, Markevich, V.P, Lindström, J.L

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Evolution of radiation-induced carbon–oxygen-related defects in silicon upon annealing: LVM studies von Murin, L.I., Lindström, J.L., Davies, G., Markevich, V.P.

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Deep level defects in electron-irradiated 4H SiC epitaxial layers von Hemmingsson, C., Son, N. T., Kordina, O., Bergman, J. P., Janzén, E., Lindström, J. L., Savage, S., Nordell, N.

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Early stages of oxygen clustering in hydrogenated Cz-Si: IR absorption studies von Murin, L.I, Markevich, V.P, Suezawa, M, Lindström, J.L, Kleverman, M, Hallberg, T

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Local vibrational mode spectroscopy of thermal donors in germanium von Markevich, V.P, Murin, L.I, Litvinov, V.V, Kletchko, A.A, Lindström, J.L

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Photoluminescence characterization of defects created in electron-irradiated silicon at elevated temperatures von Buyanova, I.A, Monemar, B, Lindström, J.L, Hallberg, T, Murin, L.I, Markevich, V.P

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Complexes of the self-interstitial with oxygen in irradiated silicon:: a new assignment of the 936 cm −1 band von Hermansson, J, Murin, L.I, Hallberg, T, Markevich, V.P, Lindström, J.L, Kleverman, M, Svensson, B.G

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Zeeman spectroscopy of the neutral silicon vacancy in 6H and 4H SiC von Wagner, Mt, Magnusson, B., Sörman, E., Hallin, C., Lindström, J.L., Chen, W.M., Janzén, E.

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Trivacancy-oxygen complex in silicon: Local vibrational mode characterization von Murin, L.I., Svensson, B.G., Lindström, J.L., Markevich, V.P., Londos, C.A.

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Characterization of oxygen dimer-enriched silicon detectors von Boisvert, V., Lindström, J.L., Moll, M., Murin, L.I., Pintilie, I.

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The self-trapping of hydrogen in semiconductors von Deák, P., Snyder, L.C., Lindström, J.L., Corbett, J.W., Pearton, S.J., Tavendale, A.J.

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Evidence for H2 trapped by carbon impurities in silicon von Hourahine, B., Jones, R., Öberg, Sven, Briddon, P.R., Markevich, V.P., Newman, R.C., Hermansson, J., Kleverman, M., Lindström, J.L., Murin, L.I., Fukata, N., Suezawa, M.

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Interaction between localized and extended modes of oxygen in silicon von McCluskey, M.D, Hsu, L, Lindström, J.L

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Effect of high hydrostatic pressure on small oxygen-related clusters in silicon: LVM studies von Murin, L.I., Lindström, J.L., Misiuk, A.

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