Defect reactions associated with divacancy elimination in silicon von Markevich, V P, Peaker, A R, Lastovskii, S B, Murin, L I, Lindström, J L

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Deep level defects in electron-irradiated 4H SiC epitaxial layers von Hemmingsson, C., Son, N. T., Kordina, O., Bergman, J. P., Janzén, E., Lindström, J. L., Savage, S., Nordell, N.

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Thermal double donor annihilation and oxygen precipitation at around 650 °C in Czochralski-grown Si: local vibrational mode studies von Murin, L I, Lindström, J L, Markevich, V P, Misiuk, A, Londos, C A

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The oxygen dimer in Si: Its relationship to the light-induced degradation of Si solar cells? von Murin, L. I., Tolkacheva, E. A., Markevich, V. P., Peaker, A. R., Hamilton, B., Monakhov, E., Svensson, B. G., Lindström, J. L., Santos, P., Coutinho, J., Carvalho, A.

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Electronic properties of vacancy–oxygen complex in Ge crystals von Markevich, V. P., Hawkins, I. D., Peaker, A. R., Litvinov, V. V., Murin, L. I., Dobaczewski, L., Lindström, J. L.

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Electrically active point defects in n-type 4H–SiC von Doyle, J. P., Linnarsson, M. K., Pellegrino, P., Keskitalo, N., Svensson, B. G., Schöner, A., Nordell, N., Lindström, J. L.

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Photoluminescence of GaN: Effect of electron irradiation von Buyanova, I. A., Wagner, Mt, Chen, W. M., Monemar, B., Lindström, J. L., Amano, H., Akasaki, I.

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Capture cross sections of electron irradiation induced defects in 6H–SiC von Hemmingsson, C., Son, N. T., Kordina, O., Janzén, E., Lindström, J. L.

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Electrically active radiation-induced defects in Czochralski-grown Si with low carbon content von Markevich, V P, Murin, L I, Lastovskii, S B, Medvedeva, I F, Komarov, B A, Lindström, J L, Peaker, A R

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Carbon-vacancy related defects in 4H- and 6H-SiC von Son, N.T., Chen, W.M., Lindström, J.L., Monemar, B., Janzén, E.

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Determination of interstitial oxygen concentration in germanium by infrared absorption von Litvinov, V. V., Svensson, B. G., Murin, L. I., Lindström, J. L., Markevich, V. P., Peaker, A. R.

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Observation of rapid direct charge transfer between deep defects in silicon von Frens, AM, Bennebroek, MT, Zakrzewski, A, Schmidt, J, Chen, WM, Janzén, E, Lindström, JL, Monemar, B

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Configuration transformation of metastable defects in 6H-SiC von Hemmingsson, C G, Son, N T, Kordina, O, Lindström, J L, Janzén, E

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Ultrashallow thermal donor formation in silicon by annealing in ambient oxygen von Åberg, D., Linnarsson, M. K., Svensson, B. G., Hallberg, T., Lindström, J. L.

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Local vibrational modes of the oxygen trimer in Si von Murin, L. I., Tolkacheva, E. A., Markevich, V. P., Peaker, A. R., Svensson, B. G., Lindström, J. L.

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The VO2 defect in silicon von Lindström, J.L., Murin, L.I., Svensson, B.G., Markevich, V.P., Hallberg, T.

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Defect engineering in Czochralski silicon by electron irradiation at different temperatures von Lindström, J.L, Murin, L.I, Hallberg, T, Markevich, V.P, Svensson, B.G, Kleverman, M, Hermansson, J

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2 MeV electron irradiation of silicon at elevated temperatures: Influence on platinum diffusion and creation of electrically active defects von Schmidt, D. C., Svensson, B. G., Lindström, J. L., Godey, S., Ntsoenzok, E., Barbot, J. F., Blanchard, C.

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Evolution of radiation-induced carbon–oxygen-related defects in silicon upon annealing: LVM studies von Murin, L.I., Lindström, J.L., Davies, G., Markevich, V.P.

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Characterization of oxygen dimer-enriched silicon detectors von Boisvert, V., Lindström, J.L., Moll, M., Murin, L.I., Pintilie, I.

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