Theory of grain-boundary and intragrain recombination currents in polysilicon p-n-junction solar cells von Fossum, J.G., Lindholm, F.A.

Volltext

Application of the superposition principle to solar-cell analysis von Lindholm, F.A., Fossum, J.G., Burgess, E.L.

Volltext

Dember effect in fast photoconductive circuit elements von Bor-Yuan Hwang, Lindholm, F.A.

Volltext

Rigid band analysis of heavily doped semiconductor devices von Marshak, A.H., Shibib, M.A., Fossum, J.G., Lindholm, F.A.

Volltext

Effects on the open-circuit voltage of grain boundaries within the junction space-charge region of polycrystalline solar cells von Fossum, J.G., Lindholm, F.A.

Volltext

A methodology for experimentally based determination of gap shrinkage and effective lifetimes in the emitter and base of p-n junction solar cells and other p-n junction devices von Lindholm, F.A., Neugroschel, A., Chih-Tang Sah, Godlewski, M.P., Brandhorst, H.W.

Volltext

A new charge-control model for single- and double-heterojunction bipolar transistors von Parikh, C.D., Lindholm, F.A.

Volltext

Space-charge region recombination in heterojunction bipolar transistors von Parikh, C.D., Lindholm, F.A.

Volltext

Analytical and numerical modeling of amorphous silicon p-i-n solar cells von MISIAKOS, K, LINDHOLM, F. A

Volltext

Reply to "comments on 'a method for determining energy gap narrowing in highly doped semiconductors'" von Neugroschel, A., Lindholm, F.A.

Volltext

Systematic analytical solutions for minority-carrier transport in semiconductors with position-dependent composition, with application to heavily doped silicon von Jong-Sik Park, Neugroschel, A., Lindholm, F.A.

Volltext

Generalized reciprocity theorem for semiconductor devices von Misiakos, K., Lindholm, F. A.

Volltext

Reply to ‘‘Comments on ‘Direct experimental determination of voltage across high-low junctions’ ’’ [J. Appl. Phys. 5 9 , 285 (1985)] von Daud, T., Lindholm, F. A.

Volltext

One-dimensional non-quasi-static models for arbitrarily and heavily doped quasi-neutral layers in bipolar transistors von Wu, B.S., Lindholm, F.A.

Volltext

Forward-voltage capacitance and thickness of p-n junction space-charge regions von Liou, J.J., Lindholm, F.A., Park, J.S.

Volltext

One-dimensional all injection nonquasi-static models for arbitrarily doped quasi-neutral layers in bipolar junction transistors including plasma-induced energy-gap narrowing von Wu, B.S., Lindholm, F.A.

Volltext

Heavily doped polysilicon-contact solar cells von Lindholm, F.A., Neugroschel, A., Arienzo, M., Iles, P.A.

Volltext

Foreword von Lindholm, F.A., Rappaport, P.

Volltext

Foreword von Lindholm, F.A., Rappaport, P.

Volltext

Evidence for low diffusivity and mobility of minority carriers in highly doped Si and interpretation von Neugroschel, A, Lindholm, F A

Volltext