Analytical and numerical modeling of amorphous silicon p-i-n solar cells von MISIAKOS, K, LINDHOLM, F. A

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Space-charge region recombination in heterojunction bipolar transistors von Parikh, C.D., Lindholm, F.A.

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Generalized reciprocity theorem for semiconductor devices von Misiakos, K., Lindholm, F. A.

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Heavily doped polysilicon-contact solar cells von Lindholm, F.A., Neugroschel, A., Arienzo, M., Iles, P.A.

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Systematic analytical solutions for minority-carrier transport in semiconductors with position-dependent composition, with application to heavily doped silicon von Jong-Sik Park, Neugroschel, A., Lindholm, F.A.

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Modeling the cutoff frequency of single-heterojunction bipolar transistors subjected to high collector-layer current von LIOU, J. J, LINDHOLM, F. A, WU, B. S

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One-dimensional non-quasi-static models for arbitrarily and heavily doped quasi-neutral layers in bipolar transistors von Wu, B.S., Lindholm, F.A.

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Direct experimental determination of voltage across high-low junctions von Daud, T., Lindholm, F. A.

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One-dimensional all injection nonquasi-static models for arbitrarily doped quasi-neutral layers in bipolar junction transistors including plasma-induced energy-gap narrowing von Wu, B.S., Lindholm, F.A.

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Computer simulation and analytical models for the time-of-flight experiment in amorphous silicon thin films von MISIAKOS, K, LINDHOLM, F. A

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Evidence for excess carrier storage in electron-hole plasma in silicon transistors von Neugroschel, A., Wang, J.S., Lindholm, F.A.

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Exact solution of three-dimensional transport problems using one-dimensional models von Misiakos, K., Lindholm, F. A.

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Evidence for low diffusivity and mobility of minority carriers in highly doped Si and interpretation von Neugroschel, A, Lindholm, F A

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Thickness of p/n junction space-charge layers von LIOU, J. J, LINDHOLM, F. A

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Forward-voltage capacitance of heterojunction space-charge regions von LIOU, J. J, LINDHOLM, F. A, MALOCHA, D. C

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Influence of heavily doped contacts on photoconductive switch properties von Thompson, S.E., Lindholm, F.A.

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Simultaneous extraction of minority-carrier transport parameters in crystalline semiconductors by lateral photocurrent von MISIAKOS, K, WANG, C. H, NEUGROSCHEL, A, LINDHOLM, F. A

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Steady-state currents in p-n junction filaments or grains in case of large surface recombination velocities at lateral surfaces von Von Roos, O., Lindholm, F. A.

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Quasistatic capacitance of p/n junction space-charge layers by the Leibnitz rule von LINDHOLM, F. A, LIOU, J. J

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Non-quasi-static models including all injection levels and DC, AC, and transient emitter crowding in bipolar transistors von Wu, B.S., Lindholm, F.A.

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