Dielectric breakdown mechanisms in gate oxides von Lombardo, Salvatore, Stathis, James H., Linder, Barry P., Pey, Kin Leong, Palumbo, Felix, Tung, Chih Hang

Volltext

Self-Heating Measurement of 14-nm FinFET SOI Transistors Using 2-D Time-Resolved Emission von Stellari, Franco, Jenkins, Keith A., Weger, Alan J., Linder, Barry P., Peilin Song

Volltext

Reduction of Hot Carrier Degradation of FinFETs Due to Short-Pulse Stress von Jenkins, Keith A., Linder, Barry P.

Volltext

Interfacial layer optimization of high- k/metal gate stacks for low temperature processing von Linder, Barry P., Narayanan, Vijay, Cartier, Eduard A.

Volltext

Plasma immersion ion implantation for electronic materials von JONES, E. C, LINDER, B. P, CHEUNG, N. W

Volltext

Separating NBTI and PBTI effects on the degradation of Ring Oscillator frequency von Linder, B. P., Jae-Joon Kim, Rao, R., Jenkins, K., Bansal, A.

Volltext

Reliability monitoring ring oscillator structures for isolated/combined NBTI and PBTI measurement in high-k metal gate technologies von Jae-Joon Kim, Linder, B P, Rao, Rahul M, Tae-Hyoung Kim, Pong-Fei Lu, Jenkins, K A, Kim, Chris H, Bansal, A, Mukhopadhyay, S, Ching-Te Chuang

Volltext

Performance Degradation Analysis and Hot-Carrier Injection Impact on the Lifetime Prediction of LC Voltage Control Oscillator von Chih-Hsiang Ho, Jenkins, Keith A., Ainspan, Herschel, Ray, Emily, Linder, Barry P., Peilin Song

Volltext

Modeling of energy distributions for plasma implantation von Linder, Barry P., Cheung, Nathan W.

Volltext

Plasma immersion ion implantation with dielectric substrates von Linder, B.P., Cheung, N.W.

Volltext

Voltage dependence of hard breakdown growth and the reliability implication in thin dielectrics von Linder, B.P., Lombardo, S., Stathis, J.H., Vayshenker, A., Frank, D.J.

Volltext

(Invited) Metal Gate/High-κ Dielectric Gate Stack Reliability; or How I Learned to Live with Trappy Oxides von Linder, Barry P., Cartier, Eduard A., Krishnan, Siddarth

Volltext

Interfacial layer optimization of high-@@ik@/metal gate stacks for low temperature processing von Linder, Barry P, Narayanan, Vijay, Cartier, Eduard A

Volltext

The effect of subsurface doping on gate oxide charging damage von Linder, B.P., En, W.G., Cheung, N.W.

Volltext

The effect of interface thickness of high-k/metal gate stacks on NFET dielectric reliability von Linder, B.P., Cartier, E., Krishnan, S., Stathis, J.H., Kerber, A.

Volltext

Reduction of negative bias temperature instability von Linder, Barry P, Ando, Takashi

Volltext bestellen

Process and Electrical Characteristics of MO-ALD HfO2 Films for High-k Gate Applications Grown in a Production Worthy 300 mm Deposition System von Clark, Robert D., Wajda, Cory S., Leusink, Gert J., Edge, Lisa F., Faltermeier, Johnathan, Jamison, Paul, Linder, Barry P., Copel, Matthew, Narayanan, Vijay, Gribelyuk, Michael A., Loesing, Rainer, Murphy, Richard

Volltext

Measuring individual device degradation in CMOS circuits von Linder, Barry P, Jenkins, Keith A

Volltext bestellen

Reduction of negative bias temperature instability von Linder, Barry P, Ando, Takashi

Volltext bestellen

REDUCTION OF NEGATIVE BIAS TEMPERATURE INSTABILITY von Linder, Barry P, Ando, Takashi

Volltext bestellen