Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors von Li, Yunpeng, Yang, Jin, Wang, Yiming, Ma, Pengfei, Yuan, Yvzhuo, Zhang, Jiawei, Lin, Zhaojun, Zhou, Li, Xin, Qian, Song, Aimin

Volltext

Porous copper zinc tin sulfide thin film as photocathode for double junction photoelectrochemical solar cells von Dai, Pengcheng, Zhang, Guan, Chen, Yuncheng, Jiang, Hechun, Feng, Zhenyu, Lin, Zhaojun, Zhan, Jinhua

Volltext

Complementary Integrated Circuits Based on n-Type and p-Type Oxide Semiconductors for Applications Beyond Flat-Panel Displays von Li, Yunpeng, Zhang, Jiawei, Yang, Jin, Yuan, Yvzhuo, Hu, Zhenjia, Lin, Zhaojun, Song, Aimin, Xin, Qian

Volltext

Modeling of the Gate Bias-Dependent Velocity-Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs von Wang, Mingyan, Lv, Yuanjie, Zhou, Heng, Cui, Peng, Lin, Zhaojun

Volltext

Corrections to "Modeling of the Gate Bias- Dependent Velocity-Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs" von Wang, Mingyan, Lv, Yuanjie, Zhou, Heng, Cui, Peng, Lin, Zhaojun

Volltext

Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Extrinsic Transconductance in AlGaN/GaN Heterostructure FETs von Yang, Ming, Lin, Zhaojun, Zhao, Jingtao, Cui, Peng, Fu, Chen, Lv, Yuanjie, Feng, Zhihong

Volltext

Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs von Cui, Peng, Liu, Huan, Lin, Wei, Lin, Zhaojun, Cheng, Aijie, Yang, Ming, Liu, Yan, Fu, Chen, Lv, Yuanjie, Luan, Chongbiao

Volltext

Ambipolar SnOx thin-film transistors achieved at high sputtering power von Li, Yunpeng, Yang, Jia, Qu, Yunxiu, Zhang, Jiawei, Zhou, Li, Yang, Zaixing, Lin, Zhaojun, Wang, Qingpu, Song, Aimin, Xin, Qian

Volltext

Polarized Coulomb field scattering in LaAlO3/SrTiO3 heterojunction field-effect transistors von Fan, Baocai, Liu, Yichen, Fu, Chen, Lin, Zhaojun, Li, Sean

Volltext

A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology von Liu, Yang, Lv, Yuanjie, Guo, Shuoshuo, Luan, Zhengfang, Cheng, Aijie, Lin, Zhaojun, Yang, Yongxiong, Jiang, Guangyuan, Zhou, Yan

Volltext

Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering von Yang, Ming, Lv, Yuanjie, Feng, Zhihong, Lin, Wei, Cui, Peng, Liu, Yan, Fu, Chen, Lin, Zhaojun

Volltext

FRRW: A feature extraction-based robust and reversible watermarking scheme utilizing zernike moments and histogram shifting von Sun, Ying, Yuan, Xiaochen, Liu, Tong, Huang, Guoheng, Lin, Zhaojun, Li, Jianqing

Volltext

Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN∕GaN heterostructures von Zhao, Jianzhi, Lin, Zhaojun, Corrigan, Timothy D., Wang, Zhen, You, Zhidong, Wang, Zhanguo

Volltext

Polarization Coulomb field scattering with the electron systems in AlGaN/GaN heterostructure field-effect transistors von Jiang, Guangyuan, Lv, Yuanjie, Lin, Zhaojun, Yang, Yongxiong, Liu, Yang, Guo, Shuoshuo, Zhou, Yan

Volltext

Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics von Lv, Yuanjie, Lin, Zhaojun, Corrigan, Timothy D., Zhao, Jianzhi, Cao, Zhifang, Meng, Lingguo, Luan, Chongbiao, Wang, Zhanguo, Chen, Hong

Volltext

Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Post Bis(trifluoromethane) Sulfonamide Treatment von Chen, Siheng, Cui, Peng, Xu, Mingsheng, Lin, Zhaojun, Xu, Xiangang, Zeng, Yuping, Han, Jisheng

Volltext

Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method von Yang, Yongxiong, Lin, Zhaojun, Wang, Mingyan, Zhou, Heng, Liu, Yang, Jiang, Guangyuan

Volltext

A split-gate AlGaN/GaN heterostructure field-effect transistor with an auxiliary gate von Liu, Yang, Lv, Yuanjie, Zhou, Heng, Lin, Zhaojun, Yang, Yongxiong, Jiang, Guangyuan, Zhou, Yan, Wang, Mingyan

Volltext

Understanding field scattering in AIGaN/GaN heterostructure field-effect transistors von Lin, Zhaojun

Volltext

Effects of floating gate structures on the two-dimensional electron gas density and electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors von Zhao, Jingtao, Zhao, Zhenguo, Chen, Zidong, Lin, Zhaojun, Xu, Fukai

Volltext