Embedded-Ge source and drain in InGaAs/GaAs dual channel MESFET von Hung, Shang-Chao, Luan, Qiuping, Lin, Hau-Yu, Li, Shuguang, Chang, Shoou-Jinn

Volltext

Investigation of Stress Memorization Process on Low-Frequency Noise Performance for Strained Si n-Type Metal--Oxide--Semiconductor Field-Effect Transistors von Kuo, Cheng-Wen, Wu, San-Lein, Lin, Hau-Yu, Huang, Yao-Tsung, Chang, Shoou-Jinn, Hong, De-Gong, Wu, Chung-Yi, Cheng, Yao-Chin, Cheng, Osbert

Volltext

Impact of Ge Content on Flicker Noise Behavior of Strained-SiGe p-Type Metal–Oxide–Semiconductor Field-Effect Transistors von Wu, San-Lein, Wu, Chung Yi, Lin, Hau-Yu, Kuo, Cheng-Wen, Chen, Shin-Hsin, Lin, Chung Hsiung, Chang, Shoou-Jinn

Volltext

Influences of surface reconstruction on the atomic-layer-deposited HfO2/Al2O3/n-InAs metal-oxide-semiconductor capacitors von Lin, Hau-Yu, Wu, San-Lein, Cheng, Chao-Ching, Ko, Chih-Hsin, Wann, Clement H., Lin, You-Ru, Chang, Shoou-Jinn, Wu, Tai-Bor

Volltext

Ge Epitaxial Growth on GaAs Substrates for Application to Ge-Source/Drain GaAs MOSFETs von Luo, Guang-Li, Han, Zong-You, Chien, Chao-Hsin, Ko, Chih-Hsin, Wann, Clement H., Lin, Hau-Yu, Shen, Yi-Ling, Chung, Cheng-Ting, Huang, Shih-Chiang, Cheng, Chao-Ching, Chang, Chun-Yen

Volltext

Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors von Zhang, Xingui, Guo, Huaxin, Lin, Hau-Yu, Cheng, Chao-Ching, Ko, Chih-Hsin, Wann, Clement H., Luo, Guang-Li, Chang, Chun-Yen, Chien, Chao-Hsin, Han, Zong-You, Huang, Shih-Chiang, Chin, Hock-Chun, Gong, Xiao, Koh, Shao-Ming, Lim, Phyllis Shi Ya, Yeo, Yee-Chia

Volltext

The Annihilation of Threading Dislocations in the Germanium Epitaxially Grown within the Silicon Nanoscale Trenches von Luo, Guang-Li, Huang, Shih-Chiang, Ko, Chih-Hsin, Wann, Clement H., Chung, Cheng-Ting, Han, Zong-You, Cheng, Chao-Ching, Chang, Chun-Yen, Lin, Hau-Yu, Chien, Chao-Hsin

Volltext

Investigation of interface characteristics in strained-Si nMOSFETs von Kuo, Cheng Wen, Wu, San Lein, Chang, Shoou Jinn, Lin, Hau Yu, Wang, Yen Ping, Hung, Shang Chao

Volltext

DC and 1/ f noise characteristics of strained-Si nMOSFETs using chemical–mechanical-polishing technique von Lin, Hau Yu, Wu, San Lein, Chang, Shoou Jinn, Kuo, Cheng Wen, Wang, Yen Ping, Hung, Shang Chao

Volltext

Impact of Reducing Shallow Trench Isolation Mechanical Stress on Active Length for 40 nm n-Type Metal--Oxide--Semiconductor Field-Effect Transistors von Huang, Yao-Tsung, Wu, San-Lein, Lin, Hau-Yu, Kuo, Cheng-Wen, Chang, Shoou-Jinn, Hong, De-Gong, Wu, Chung-Yi, Huang, Cheng-Tung, Cheng, Osbert

Volltext

Investigation of Stress Memorization Process on Low-Frequency Noise Performance for Strained Si n-Type Metal–Oxide–Semiconductor Field-Effect Transistors von Kuo, Cheng-Wen, Wu, San-Lein, Lin, Hau-Yu, Huang, Yao-Tsung, Chang, Shoou-Jinn, Hong, De-Gong, Wu, Chung-Yi, Cheng, Yao-Chin, Cheng, Osbert

Volltext

Impact of Reducing Shallow Trench Isolation Mechanical Stress on Active Length for 40 nm n-Type Metal–Oxide–Semiconductor Field-Effect Transistors von Huang, Yao-Tsung, Wu, San-Lein, Lin, Hau-Yu, Kuo, Cheng-Wen, Chang, Shoou-Jinn, Hong, De-Gong, Wu, Chung-Yi, Huang, Cheng-Tung, Cheng, Osbert

Volltext

III-V MOSFETs with a new self-aligned contact von Zhang, Xingui, Guo, Huaxin, Ko, Chih-Hsin, Wann, Clement H., Cheng, Chao-Ching, Lin, Hau-Yu, Chin, Hock-Chun, Gong, Xiao, Lim, Phyllis Shi Ya, Luo, Guang-Li, Chang, Chun-Yen, Chien, Chao-Hsin, Han, Zong-You, Huang, Shih-Chiang, Yeo, Yee-Chia

Volltext

Adjusting Sink Location to Reduce End-to-End Delay in Low-Duty-Cycle Wireless Sensor Networks von Yu-Yuan Lin Kuo-Feng Ssu Hau-Yu Chiang

Volltext

Influences of surface reconstruction on the atomic-layer-deposited HfO 2 / Al 2 O 3 / n-InAs metal-oxide-semiconductor capacitors von Lin, Hau-Yu, Wu, San-Lein, Cheng, Chao-Ching, Ko, Chih-Hsin, Wann, Clement H., Lin, You-Ru, Chang, Shoou-Jinn, Wu, Tai-Bor

Volltext

In0.7Ga0.3As channel n-MOSFETs with a novel self-aligned Ni-InGaAs contact formed using a salicide-like metallization process von Xingui Zhang, Huaxin Guo, Xiao Gong, Qian Zhou, Hau-Yu Lin, You-Ru Lin, Chih-Hsin Ko, Wann, C H, Yee-Chia Yeo

Volltext

Nearly Dislocation-free Ge/Si Heterostructures by Using Nanoscale Epitaxial Growth Method von Luo, Guang-Li, Ko, Chih-Hsin, Wann, Clement H., Chung, Cheng-Ting, Han, Zong-You, Cheng, Chao-Ching, Chang, Chun-Yen, Lin, Hau-Yu, Chien, Chao-Hsin

Volltext

A new self-aligned contact technology for III-V MOSFETs von Huaxin Guo, Xingui Zhang, Hock-Chun Chin, Xiao Gong, Shao-Ming Koh, Chunlei Zhan, Guang-Li Luo, Chun-Yen Chang, Hau-Yu Lin, Chao-Hsin Chien, Zong-You Han, Shih-Chiang Huang, Chao-Ching Cheng, Chih-Hsin Ko, Wann, C H, Yee-Chia Yeo

Volltext

Method of metal gate formation and structures formed by the same von Chen, I-Sheng, Cheng, Ya-Yun, Ko, Chih-Hsin, Wann, Clement Hsingjen, Lee, Yi-Jing, Lin, Hau-Yu, Hsu, Chia-Ming

Volltext bestellen

Wrap-around contact on FinFET von Sun, Sey-Ping, Hsu, Chen-Feng, Ko, Chih-Hsin, Wann, Clement Hsingjen, Shih, Ding-Kang, Huang, Gin-Chen, Chang, Meng-Chun, Wang, Sung-Li, Chen, Neng-Kuo, Lin, Yi-An, Lin, Hau-Yu

Volltext bestellen