Anodic oxide films on silicon carbide von Lilov, S. K.

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Study of the equilibrium processes in the gas phase during silicon carbide sublimation von Lilov, S.K.

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Investigation of the growth processes from vapor phase of silicon carbide epitaxial layers: Thermodynamic analysis of the high temperature processes in the system Si-C-H-Cl von Lilov, S. K.

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Thermodynamic analysis of phase transformations at the dissociative evaporation of silicon carbide polytypes von Lilov, S.K.

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Epitaxial growth of 4H–SiC by sublimation close space technique von Nishino, S, Matsumoto, K, Yoshida, T, Chen, Y, Lilov, S.K

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Growth of oriented diamond film on single crystalline 6H-SiC substrates von LI, X, HAYASHI, Y, LILOV, S. K, NISHINO, S

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Determination of native defect concentrations and deviation from stoichiometry in silicon carbide von Lilov, S.K.

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Thermodynamic analysis of the Gas Phase at the Dissociative Evaporation of Silicon Carbide von Lilov, S. K.

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Investigation of the thermal conditions during silicon carbide crystal growth von Lilov, S. K.

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Epitaxy of High Quality SiC Layers by CST von Lilov, S.K., Yoshida, Takeru, Nishio, Y., Nishino, Shigehiro

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Investigation of the role of crystal growth zone during silicon carbide growth by the sublimation method von Lilov, S. K.

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Thermodynamic analysis of the gas phase at the dissociative evaporation of silicon carbide von Lilov, S.K.

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Study of the concentration distribution of SiC vapour in the crystal growth zone von Lilov, S.K., Yanchev, I.Y.

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Investigation of the evaporation mechanism during silicon carbide crystal growth from vapour phase von LILOV, S. K

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Study of the concentration distribution of SiC vapour in the crystal growth zone von Lilov, S K, Yanchev, I Y

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Investigation of the formation and growth processes of silicon carbide monocrystals von Lilov, S. K.

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Study of the evaporation mechanism in silicon carbide crystal growth from vapour phase von LILOV, S. K

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Study of the concentration distribution of SiC vapour in the crystal growth zone von Lilov, S.K., Yanchev, I.Y.

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Crystal growth of silicon carbide in hydrogen atmosphere by sublimation close space technique von Furusho, T., Lilov, S.K., Ohshima, S., Nishino, S.

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Determination of the Effective Kinetic Diameter of the Complex Molecules von Lilov, S. K.

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