400 GHz FMAX InP/GaAsSb HBT for millimeter-wave applications von Nodjiadjim, V, Riet, M, Scavennec, A, Berdaguer, P, Piotrowicz, S, Jardel, O, Godin, J, Bove, P, Lijadi, M

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Recent Achievement in the GaN Epitaxy on Silicon and Engineering Substrates von Thuret, Julien, Bove, Philippe, Lahreche, Hacene, Wilk, A., Lijadi, M, Langer, R

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Floating contact transmission line modelling: An improved method for ohmic contact resistance measurement von Lijadi, Melania, Pardo, Fabrice, Bardou, Nathalie, Pelouard, Jean-Luc

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Photoreflectance spectroscopy for the qualification of GaAsSb alloys introduced in ultrafast heterojunction bipolar transistors on InP von Chouaib, Houssam, Bru-Chevallier, Catherine, Apostoluk, Aleksandra, Rudno-Rudzinski, Wojciech, Pelouard, Jean-Luc, Lijadi, Melania, Bove, Philippe

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Surface Fermi level in GaAsSb alloys grown by MBE on Inp substrates von Chouaib, H., Rudno-Rudzinski, W., Apostoluk, A., Bru-Chevallier, C., Lijadi, M., Bove, P.

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InP/GaAsSb/InP multifinger DHBTs for power applications von Nodjiadjim, V., Riet, M., Scavennec, A., Berdaguer, P., Drisse, O., Derouin, E., Godin, J., Bove, P., Lijadi, M.

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Comparative collector design in InGaAs and GaAsSb based InP DHBTs von Nodjiadjim, V., Riet, M., Scavennec, A., Berdaguer, P., Gentner, J.L., Godin, J., Bove, P., Lijadi, M.

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Epitaxial growth of silver on an Si( 111) √3 × √3 Au surface at room temperature von Ichimiya, A., Iwashige, H., Lijadi, M.

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Silver growth on Si(111)√3 X √3 -Ag surfaces at low temperature von LIJADI, M, IWASHIGE, H, ICHIMIYA, A

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Epitaxial growth of silver on an Si(111) √3 × √3 Au surface at room temperature von ICHIMIYA, A, IWASHIGE, H, LIJADI, M

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Interface structure of Si(111) √3 × √3-Ag studied by grazing incidence X-ray diffraction von Akimoto, K., Lijadi, M., Susami, T., Ichimiya, A.

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Controlled etching of ingaalas and GaAsSb using citric acid/hydrogen peroxide mixtures high selectivity and good surface roughness von Lyadi, Melania, David, Christophe, Pelouard, Jean-Luc

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A GaAsSb/InP HBT circuit technology von Godin, J., Riet, M., Konczykowska, A., Berdaguer, P., Kahn, M., Bove, P., Lahreche, H., Langer, R., Lijadi, M., Pardo, F., Bardou, N., Pelouard, J.-L., Maneux, C., Belhaj, M., Grandchamp, B., Labat, N., Touboul, A., Bru-Chevallier, C., Chouaib, H., Benyattou, T.

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Measurements of stress fields of Si and of Ag/Si with X-ray diffraction method von Emoto, T., Tsukahara, Y., Lijadi, M., Akimoto, K., Ichimiya, A., Hirano, K., Zhang, X.

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X線によるSiおよびAg/Si界面の格子歪測定 von 榎本, 貴志, 塚原, 靖典, Melania, Lijadi, 秋本, 晃一, 一宮, 彪彦, 平野, 馨一, 張, 小威

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METHOD FOR MAKING A HETEROJUNCTION BIPOLAR TRANSISTOR von LIJADI, MELANIA, DUPUIS, CHRISTOPHE, BOVE, PHILIPPE, PELOUARD, JEAN-LUC, PARDO, FABRICE

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METHOD FOR MAKING A HETEROJUNCTION BIPOLAR TRANSISTOR von LIJADI, MELANIA, DUPUIS, CHRISTOPHE, BOVE, PHILIPPE, PELOUARD, JEAN-LUC, PARDO, FABRICE

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PROCEDE DE REALISATION D'UN TRANSISTOR BIPOLAIRE A HETEROJONCTION von PARDO FABRICE, PELOUARD JEAN LUC, BOVE PHILIPPE, DUPUIS CHRISTOPHE, LIJADI MELANIA

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