Correlation between strain and the metal–insulator transition in epitaxial V2O3 thin films grown by Molecular Beam Epitaxy von Dillemans, L., Lieten, R.R., Menghini, M., Smets, T., Seo, J.W., Locquet, J.-P.

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Suppression of domain formation in GaN layers grown on Ge(1 1 1) von Lieten, R.R., Degroote, S., Leys, M., Borghs, G.

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Interface of GaN grown on Ge(1 1 1) by plasma assisted molecular beam epitaxy von Lieten, R.R., Richard, O., Degroote, S., Leys, M., Bender, H., Borghs, G.

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Anodic Etching of n‑GaN Epilayer into Porous GaN and Its Photoelectrochemical Properties von Tseng, W. J, van Dorp, D. H, Lieten, R. R, Vereecken, P. M, Borghs, G

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Single crystalline SiGe layers on Si by solid phase epitaxy von Lieten, R.R., McCallum, J.C., Johnson, B.C.

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Impact of Plasma-Induced Surface Damage on the Photoelectrochemical Properties of GaN Pillars Fabricated by Dry Etching von Tseng, Wei-Jhih, van Dorp, D. H, Lieten, R. R, Vereecken, P. M, Langer, R, Borghs, G

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Observation of a paramagnetic defect at the epitaxial Ge 3N 4/(111)Ge interface by electron spin resonance von Nguyen, A.P.D., Stesmans, A., Afanas'ev, V.V., Lieten, R.R., Borghs, G.

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Observation of a paramagnetic defect at the epitaxial Ge3N4/(111)Ge interface by electron spin resonance von NGUYEN, A. P. D, STESMANS, A, AFANAS'EV, V. V, LIETEN, R. R, BORGHS, G

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Growth of InN on Ge(1 1 1) by molecular beam epitaxy using a GaN buffer von Lieten, R.R., Degroote, S., Leys, M., Derluyn, J., Kuijk, M., Borghs, G.

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Enhanced Photoelectrochemical Activity of GaN by Dry Etching into Nanopillar Array von Tseng, Wei-Jhih, Mehta, Bharat, Dorp, Dennis H. van, Lieten, Ruben R., Vereecken, Philippe M., Borghs, Gustaaf

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Influence of passivating interlayer on Ge/HfO2 and Ge/Al2O3 interface band diagrams von AFANAS'EV, V. V, STESMANS, A, DELABIE, A, BELLENGER, F, HOUSSA, M, LIETEN, R. R, MERCKLING, C, PENAUD, J, BRUNCO, D. P, MEURIS, M

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Influence of passivating interlayer on Ge/HfO 2 and Ge/Al 2O 3 interface band diagrams von Afanas’ev, V.V., Stesmans, A., Delabie, A., Bellenger, F., Houssa, M., Lieten, R.R., Merckling, C., Penaud, J., Brunco, D.P., Meuris, M.

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