GaP heteroepitaxy on Si(001): Correlation of Si-surface structure, GaP growth conditions, and Si-III/V interface structure von Beyer, A., Ohlmann, J., Liebich, S., Heim, H., Witte, G., Stolz, W., Volz, K.

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Combining treatment for chronic hepatitis C with opioid agonist therapy is an effective microelimination strategy for people who inject drugs with high risk of non-adherence to dir... von Schwarz, M., Schwarz, C., Schütz, A., Schwanke, C., Krabb, E., Schubert, R., Liebich, S.-T., Bauer, D., Burghart, L., Brinkmann, L., Gutic, E., Reiberger, T., Haltmayer, H., Gschwantler, M.

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Laser operation of Ga(NAsP) lattice-matched to (001) silicon substrate von Liebich, S., Zimprich, M., Beyer, A., Lange, C., Franzbach, D. J., Chatterjee, S., Hossain, N., Sweeney, S. J., Volz, K., Kunert, B., Stolz, W.

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Effect of boron localized states on the conduction band transport in BxGa1−xP von Petznick, S, Ostheim, L, Klar, P J, Liebich, S, Volz, K, Stolz, W

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Interplay of boron localized states and electron transport in BxGa1-x As0.11 P0.89:Te von Ostheim, L, Klar, P J, Liebich, S, Ludewig, P, Volz, K, Stolz, W

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Quantum-Dot Semiconductor Mode-Locked Lasers and Amplifiers at 40 GHz von Fiol, G., Meuer, C., Schmeckebier, H., Arsenijevic, D., Liebich, S., Laemmlin, M., Kuntz, M., Bimberg, D.

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Growth of (BGa)As, (BGa)P, (BGa)(AsP) and (BGaIn)P by MOVPE von Sommer, N., Buss, R., Ohlmann, J., Wegele, T., Jurecka, C., Liebich, S., Kunert, B., Stolz, W., Volz, K.

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Reduced threshold current dilute nitride Ga(NAsP)/GaP quantum well lasers grown by MOVPE von HOSSAIN, N, SWEENEY, S. J, ROGOWSKY, S, OSTENDORF, R, WAGNER, J, LIEBICH, S, ZIMPRICH, M, VOLZ, K, KUNERT, B, STOLZ, W

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Compositional disorder anomalies in Ga(N,P,As)/GaP quantum well structures von Jandieri, K, Baranovskii, S D, Kunert, B, Zimprich, M, Liebich, S, Volz, K, Stolz, W, Chatterjee, S, Karcher, C, Heimbrodt, W, Gebhard, F

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Small-signal cross-gain modulation and crosstalk characteristics of quantum dot semiconductor optical amplifiers at 1.3 μm von Kim, J., Laemmlin, M., Meuer, C., Liebich, S., Eisenstein, G., Kovsh, A. R., Mikhrin, S. S., Krestnikov, I. L., Bimberg, D.

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Experience-dependent Plasticity of Conceptual Representations in Human Sensory-Motor Areas von Kiefer, Markus, Sim, Eun-Jin, Liebich, Sarah, Hauk, Olaf, Tanaka, James

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MOVPE growth and characterization of Ga(NAsP) laser structures monolithically integrated on Si (001) substrates von Liebich, S., Sweeney, S.J., Zimprich, M., Ludewig, P., Beyer, A., Volz, K., Stolz, W., Kunert, B., Hossain, N., Jin, S.R.

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Interplay of boron localized states and electron transport in B x Ga 1-x As 0.11 P 0.89 :Te von Ostheim, L, Klar, P J, Liebich, S, Ludewig, P, Volz, K, Stolz, W

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Effect of boron localized states on the conduction band transport in B x Ga 1− x P von Petznick, S., Ostheim, L., Klar, P. J., Liebich, S., Volz, K., Stolz, W.

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Effect of boron localized states on the conduction band transport in B{sub x}Ga{sub 1−x}P von Petznick, S., Ostheim, L., Klar, P. J., Liebich, S., Volz, K., Stolz, W.

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From Communism to Anti-Communism von Andre Liebich, Svetlana Yakimovich (dir.)

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Efficiency-limiting processes in Ga(NAsP)/GaP quantum well lasers von Hossain, N., Jin, S. R., Liebich, S., Zimprich, M., Volz, K., Kunert, B., Stolz, W., Sweeney, S. J.

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High room-temperature optical gain in Ga(NAsP)/Si heterostructures von Koukourakis, N., Bückers, C., Funke, D. A., Gerhardt, N. C., Liebich, S., Chatterjee, S., Lange, C., Zimprich, M., Volz, K., Stolz, W., Kunert, B., Koch, S. W., Hofmann, M. R.

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Vibrational mode and dielectric function spectra of BGaP probed by Raman scattering and spectroscopic ellipsometry von Rogowsky, S., Baeumler, M., Wolfer, M., Kirste, L., Ostendorf, R., Wagner, J., Liebich, S., Stolz, W., Volz, K., Kunert, B.

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High-Speed Small-Signal Cross-Gain Modulation in Quantum-Dot Semiconductor Optical Amplifiers at 1.3 $\mu$m von Meuer, C, Kim, Jungho, Laemmlin, M, Liebich, S, Eisenstein, G, Bonk, R, Vallaitis, T, Leuthold, J, Kovsh, A, Krestnikov, I, Bimberg, D

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