Development and Fabrication of TiO2 Tip Arrays for Gas Sensing von Hotový, Ivan, Kostič, Ivan, HAščík, Štefan, ŘEháček, Vlastimil, Liday, Jozef, Sitter, Helmut

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Study of Annealed NiO Thin Films Sputtered on Unheated Substrate von Hotovy, Ivan, Liday, Jozef, Spiess, Lothar, Sitter, Helmut, Vogrincic, Peter

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III-As heterostructure field-effect transistors with recessed ex-situ gate oxide by O2 plasma-oxidized GaAs cap von Gucmann, Filip, Kúdela, Róbert, Kordoš, Peter, Dobročka, Edmund, Gaži, Štefan, Dérer, Ján, Liday, Jozef, Vogrinčič, Peter, Gregušová, Dagmar

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Significant increasing of onset temperature of FM transition in LSMO thin films von Chromik, Štefan, Štrbík, Vladimír, Dobročka, Edmund, Dujavová, Agáta, Reiffers, Marián, Liday, Jozef, Španková, Marianna

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Application Of Carbon Nanotubes And Reduced Graphene Oxide Layers For Ohmic Contacts To p–GaN von Liday, Jozef, Vogrinčič, Peter, Vretenár, Viliam, Kotlár, Mário, Marton, Marián, Řeháček, Vlastimil

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Improving the ohmic properties of contacts to P–GaN by adding p–type dopants into the metallization layer von Liday, Jozef, Vogrinčič, Peter, Vincze, Andrej, Breza, Juraj, Hotový, Ivan

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Preparation and structural properties of MgO films grown on GaAs substrate von Chromik, Štefan, Španková, Marianna, Vávra, Ivo, Liday, Jozef, Vogrinčič, Peter, Lobotka, Peter

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Improving the Ohmic Properties of Au/Ni–Mg/P–GaN Contacts by Adding Swcnt Metallization Interlayer Between Metal and P–GaN Layers von Liday, Jozef, Vogrinčič, Peter, Vretenár, Viliam, Hotový, Ivan, Kotlár, Mário, Marton, Marián, Řeháček, Vlastimil

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Epitaxial LSMO films grown on GaAs substrates with MgO buffer layer von Španková, Marianna, Chromik, Štefan, Vávra, Ivo, Štrbík, Vladimír, Liday, Jozef, Vogrinčič, Peter, Espinós, Juan Pedro, Lobotka, Peter

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Structural Evolution of Sputtered Indium Oxide Thin Films von Hotový, Ivan, Kups, Thomas, Hotový, Juraj, Liday, Jozef, Búc, Dalibor, Čaplovičová, Mária, Řeháček, Vlastimil, Sitter, Helmut, Simbrunner, Clemens, Bonnani, Alberta, Spiess, Lothar

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Ohmic contacts to p-GaN Using Au/Ni-Mg-O Metallization von Liday, Jozef, Vogrinčič, Peter, Hotový, Ivan, Bonanni, Alberta, Sitter, Helmut, Lalinský, Tibor, Vanko, Gabriel, Řeháček, Vlastimil, Breza, Juraj, Ecke, Gernot

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AES of semi-insulating polycrystalline silicon layers von Liday, Jozef, Tomek, Stanislav, Breza, Juraj

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Use of the Peak-to-background Ratio for Quantitative Auger Analysis of Semi-insulating Polycrystalline Silicon Layers von Liday, Jozef, Tomek, Stanislav, Vogrinčič, Peter, Mrázik, Peter, Breza, Juraj

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