Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al2O3 atomic layer deposition overgrowth von Gregušová, D., Jurkovič, M., Haščík, Š., Blaho, M., Seifertová, A., Fedor, J., Ťapajna, M., Fröhlich, K., Vogrinčič, P., Liday, J., Derluyn, J., Germain, M., Kuzmik, J.

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The distribution of elements in sequentially prepared MgB2 on SiC buffered Si substrate and possible pinning mechanisms von Chromik, Š., Nishida, A., Štrbík, V., Gregor, M., Espinós, J.P., Liday, J., Durný, R.

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Preparation and structural properties of YBCO films grown on GaN/ c-sapphire hexagonal substrate von Chromik, Š., Gierlowski, P., Španková, M., Dobročka, E., Vávra, I., Štrbík, V., Lalinský, T., Sojková, M., Liday, J., Vogrinčič, P., Espinos, J.P.

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Investigation of NiOx-based contacts on p-GaN von Liday, J., Hotový, I., Sitter, H., Vogrinčič, P., Vincze, A., Vávra, I., Šatka, A., Ecke, G., Bonanni, A., Breza, J., Simbrunner, C., Plochberger, B.

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The influence of process parameters and annealing temperature on the physical properties of sputtered NiO thin films von Hotovỳ, I., Huran, J., Spiess, L., Liday, J., Sitter, H., Hašcı&#x0301, k, Š.

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Auger electron spectroscopy investigation of sputter induced altered layers in SiC by low energy sputter depth profiling and factor analysis von Kosiba, R., Ecke, G., Liday, J., Breza, J., Ambacher, O.

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Investigation of NiO x -based contacts on p-GaN von Liday, J., Hotový, I., Sitter, H., Vogrinčič, P., Vincze, A., Vávra, I., Šatka, A., Ecke, G., Bonanni, A., Breza, J., Simbrunner, C., Plochberger, B.

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Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al{sub 2}O{sub 3} atomic layer deposition overgrowth von Gregušová, D., Jurkovič, M., Haščík, Š., Blaho, M., Seifertová, A., Fedor, J., Ťapajna, M., Fröhlich, K., Kuzmik, J., Vogrinčič, P., Liday, J., Derluyn, J., Germain, M.

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Stable fluoride based sputtering target for Tl-based cuprate superconducting thin film fabrication von Sojková, M., Štrbík, V., Chromik, Š., Liday, J., Vogrinčič, P., Dobročka, E., Španková, M., Talacko, M., Gaži, Š.

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A computer controlled chemical bevel etching apparatus: applications to Auger analysis of multi-layered structures von El-Gomati, M, Gelsthorpe, A, Srnanek, R, Liday, J, Vogrincic, P, Kovac, J

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Properties of amorphous silicon carbide films prepared by PECVD von Huran, J, Hrubcin, L, Kobzev, AP, Liday, J

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Low resistance ohmic contacts annealed at 600 °C on a InAlN/GaN heterostructure with SiCl4-reactive ion etching surface treatment von Pozzovivo, G., Kuzmik, J., Giesen, C., Heuken, M., Liday, J., Strasser, G., Pogany, D.

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Nb-Ti/Al/Ni/Au based ohmic contacts to AlGaN/GaN von Vanko, G., Lalinský, T., Mozolová, Ž., Liday, J., Vogrinčič, P., Vincze, A., Uherek, F., Haščík, Š., Kostič, I.

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Chemical bevelling of CdTe and CdTe/MnTe structures von Srnanek, R, Bonanni, A, Sitter, H, Liday, J, Novotny, I

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Auger electron spectroscopy of Au/NiO x contacts on p-GaN annealed in N 2 and O 2 + N 2 ambients von Liday, J., Hotový, I., Sitter, H., Schmidegg, K., Vogrinčič, P., Bonnani, A., Breza, J., Ecke, G., Vávra, I.

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Quantitative Auger electron spectroscopy of SiC von Kosiba, R., Liday, J., Ecke, G., Ambacher, O., Breza, J., Vogrinčič, P.

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Low resistance ohmic contacts annealed at 600 °C on a InAlN/GaN heterostructure with SiCl 4 ‐reactive ion etching surface treatment von Pozzovivo, G., Kuzmik, J., Giesen, C., Heuken, M., Liday, J., Strasser, G., Pogany, D.

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Auger electron spectroscopy of Au/NiO contacts on p-GaN annealed in N2 and O2+ N2 ambients von Liday, J., Hotový, I., Sitter, H., Schmidegg, K., Vogrinčič, P., Bonnani, A., Breza, J., Ecke, G., Vávra, I.

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The Effect of the Semiconductor Surface Treatment on LB Film/Si Interface von Barančok, D., Cirák, J., Liday, J., Pinčík, E., Tomčík, P.

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Spray deposited Tl-Ba-Ca-Cu-O films and bulks subjected to a common anneal von Jergel, M, Hanic, F, Plesch, G, Strbik, V, Liday, J, Guajado, C F, Puente, G S Contreras

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