Feasibility of Intensity Modulated Proton Therapy for Base of Skull Chordomas von Kassaee, A, Yeager, C.M, Lichtenwalner, P, Alonso-Basanta, M

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SU‐E‐T‐716: Comparison Between Two and Three Beam Intensity Modulated Proton Therapy (IMPT) Plans for Base of Skull Chordomas von Yeager, C, Lichtenwalner, P, Teo, B, Alonso‐Basanta, M, Kassaee, A

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SU‐E‐T‐724: Evaluate the Impact of Bowel Gas Movement in Pancreatic Proton Therapy von Ding, X, Kassaee, A, Avery, S, Metz, J, Lichtenwalner, P, Huang, L, Butterwick, I

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Neck Volume as a Novel Surrogate to Trigger Adaptation for Head and Neck Radiotherapy von Hu, Y.C., Zhang, P., Aliotta, E., Lichtenwalner, P., Abraham, S., Cervino, L.I., Lee, N.Y., Aristophanous, M.

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Dosimetric Impact of Inter-Fraction Variations in Bladder Filling and Rectal Emptying in Patients Undergoing Prostate SBRT von Gorovets, D., Lichtenwalner, P., Shi, C., Borofsky, K.L., Parhar, P.K., Zelefsky, M.J., Chan, M.F.

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1100 × 1100 port MEMS-based optical crossconnect with 4-dB maximum loss von Kim, J, Nuzman, C.J, Kumar, B, Lieuwen, D.F, Kraus, J.S, Weiss, A, Lichtenwalner, C.P, Papazian, A.R, Frahm, R.E, Basavanhally, N.R, Ramsey, D.A, Aksyuk, V.A, Pardo, F, Simon, M.E, Lifton, V, Chan, H.B, Haueis, M, Gasparyan, A, Shea, H.R, Arney, S, Bolle, C.A, Kolodner, P.R, Ryf, R, Neilson, D.T, Gates, J.V

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1100 x 1100 port MEMS-based optical crossconnect with 4-dB maximum loss von Kim, J., Nuzman, C.J., Kumar, B., Lieuwen, D.F., Kraus, J.S., Weiss, A., Lichtenwalner, C.P., Papazian, A.R., Frahm, R.E., Basavanhally, N.R., Ramsey, D.A., Aksyuk, V.A., Pardo, F., Simon, M.E., Lifton, V., Chan, H.B., Haueis, M., Gasparyan, A., Shea, H.R., Arney, S., Bolle, C.A., Kolodner, P.R., Ryf, R., Neilson, D.T., Gates, J.V.

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Neural network-based control for the fiber placement composite manufacturing process von LICHTENWALNER, P. F

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Use of artificial neural networks for buffet environments von Jacobs, J. H, Hedgecock, C. E, Lichtenwalner, P. F, Pado, L. E, Washburn, A. E

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Occupational Noise Exposure and Hearing Conservation von Lichtenwalner, Charles P, Michael, Kevin

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Systematic error from nonlinear least squares computer fitting of Lorentzian lines von Pfeiffer, Loren, Lichtenwalner, C. P.

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Enhanced optical fluorescence by resonant Mössbauer excitation von Lichtenwalner, C.P., Guggenheim, H.J., Pfeiffer, L.

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Determining the Time Dependence of Rapidly Responding Systems Using the Mössbauer Effect von Pfeiffer, Loren, Lichtenwalner, C. P.

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Electrically detected magnetic resonance study of barium and nitric oxide treatments of 4H-SiC metal-oxide-semiconductor field-effect transistors von Ashton, J. P., Lenahan, P. M., Lichtenwalner, D. J., Lelis, A. J., Anders, M. A.

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Ultra high voltage MOS controlled 4H-SiC power switching devices von Ryu, S, Capell, C, Van Brunt, E, Jonas, C, O'Loughlin, M, Clayton, J, Lam, K, Pala, V, Hull, B, Lemma, Y, Lichtenwalner, D, Zhang, Q J, Richmond, J, Butler, P, Grider, D, Casady, J, Allen, S, Palmour, J, Hinojosa, M, Tipton, C W, Scozzie, C

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Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning von Kirsch, P. D., Sivasubramani, P., Huang, J., Young, C. D., Quevedo-Lopez, M. A., Wen, H. C., Alshareef, H., Choi, K., Park, C. S., Freeman, K., Hussain, M. M., Bersuker, G., Harris, H. R., Majhi, P., Choi, R., Lysaght, P., Lee, B. H., Tseng, H.-H., Jammy, R., Böscke, T. S., Lichtenwalner, D. J., Jur, J. S., Kingon, A. I.

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Next generation planar 1700 V, 20 mΩ 4H-SiC DMOSFETs with low specific on-resistance and high switching speed von Zhang, Q. J., Wang, G., Jonas, C., Capell, C., Pickle, S., Butler, P., Lichtenwalner, D., Van Brunt, E., Ryu, S., Richmond, J., Hull, B., Casady, J., Allen, S., Palmour, J.

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Work function engineering using lanthanum oxide interfacial layers von Alshareef, H. N., Quevedo-Lopez, M., Wen, H. C., Harris, R., Kirsch, P., Majhi, P., Lee, B. H., Jammy, R., Lichtenwalner, D. J., Jur, J. S., Kingon, A. I.

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An epizootic of eastern equine encephalitis virus, Maine, USA in 2009: outbreak description and entomological studies von Lubelczyk, Charles, Mutebi, John-Paul, Robinson, Sara, Elias, Susan P, Smith, Leticia B, Juris, Sherrie A, Foss, Kimberly, Lichtenwalner, Anne, Shively, Kirk J, Hoenig, Donald E, Webber, Lori, Sears, Stephen, Smith, Jr, Robert P

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Lanthanum silicate gate dielectric stacks with subnanometer equivalent oxide thickness utilizing an interfacial silica consumption reaction von Lichtenwalner, Daniel J., Jur, Jesse S., Kingon, Angus I., Agustin, Melody P., Yang, Yan, Stemmer, Susanne, Goncharova, Lyudmila V., Gustafsson, Torgny, Garfunkel, Eric

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