Non-Volatile Ferroelectric FETs Using 5-nm Hf0.5Zr0.5O2 With High Data Retention and Read Endurance for 1T Memory Applications von Chen, K.-T., Chen, H.-Y., Liao, C.-Y., Siang, G.-Y., Lo, C., Liao, M.-H., Li, K.-S., Chang, S. T., Lee, M. H.

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The Demonstration of High-Quality Carbon Nanotubes as Through-Silicon Vias (TSVs) for Three-Dimensional Connection Stacking and Power-Via Technology von Yen, C.-M., Chang, S.-Y., Chen, K.-C., Feng, Y.-J., Chen, L.-H., Liao, B.-Z., Lee, M.-H., Chen, S.-C., Liao, M.-H.

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The demonstration of low-temperature (350 °C) grown carbon nano-tubes for the applications of through silicon via in 3D stacking and power-via von Lin, H.-Y., Basu, Nilabh, Chen, S.-C., Lee, M.-H., Liao, M.-H.

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The Investigation of Electrical Characteristics for Carbon Nano-Tubes as Through Silicon Via in Multi-Layer Stacking Scheme With an Optimized Structure von Chen, K. -C., Basu, Nilabh, Chen, S. -C., Lee, M. -H., Liao, M. -H.

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Ferroelectric HfZrO2 With Electrode Engineering and Stimulation Schemes as Symmetric Analog Synaptic Weight Element for Deep Neural Network Training von Hsiang, K.-Y., Liao, C.-Y., Chen, K.-T., Lin, Y.-Y., Chueh, C.-Y., Chang, C., Tseng, Y.-J., Yang, Y.-J., Chang, S. T., Liao, M.-H., Hou, T.-H., Wu, C.-H., Ho, C.-C., Chiu, J.-P., Chang, C.-S., Lee, M. H.

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The Analysis of Multiwall Carbon Nanotubes as Through Silicon Via by Equivalent Circuit Model at Different Operating Temperatures in Multilayers Stacking Scheme von Chan, Y.-C., Basu, Nilabh, Chen, T.-W., Tsai, Y.-T., Lin, H.-Y., Chen, S.-C., Lee, M.-H., Liao, M.-H.

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Reduction of Metal/Carbon Nano-Tubes Interface Contact Resistance by Floating Catalyst Growing Method and Semimetals von Tsai, Y.-T., Basu, Nilabh, Chen, T.-W., Chan, Y.-C., Lin, H.-Y., Chen, S.-C., Lee, M.-H., Liao, M.-H.

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Systematic Investigation of Self-Heating Effect on CMOS Logic Transistors From 20 to 5 nm Technology Nodes by Experimental Thermoelectric Measurements and Finite Element Modeling von Liao, M.-H, Hsieh, C.-P, Lee, C.-C

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The Development of a Dynamic Model to Investigate the Dielectric Layer Thickness Effect for the Device Performance in Triboelectric Nanogenerators von Liao, M.-H., Wu, C.-C., Su, W.-J., Chen, S.-C., Lee, M.-H.

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The Demonstration of Carbon Nanotubes (CNTs) as Flip-Chip Connections in 3-D Integrated Circuits With an Ultralow Connection Resistance von Liao, M.-H., Lu, P.-Y., Su, W.-J., Chen, S.-C., Hung, H.-T., Kao, C.-R., Pu, W.-C., Chen, C.-C. A., Lee, M.-H.

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The Demonstration of 3-D Bi2.0Te2.7Se0.3/Bi0.4Te3.0Sb1.6 Thermoelectric Devices by Ionized Sputter System von Liao, M.-H., Huang, K.-C., Su, W.-J., Chen, S.-C., Lee, M.-H.

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The demonstration of promising Ge n-type multi-gate-field-effect transistors with the magnetic FePt metal gate scheme von Liao, M.-H., Huang, S. C.

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The reduction of keep-out zone (∼10×) by the optimized novel trench structures near the through silicon vias for the application in 3-dimensional integrated circuits von Liao, M. H.

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Direct Binding and Characterization of Lipase onto Magnetic Nanoparticles von Huang, Shih-Hung, Liao, Min-Hung, Chen, Dong-Hwang

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Negative Schottky barrier height and surface inhomogeneity in n-silicon M–I–S structures von Harisha, C. P., Liao, M.-H., Kei, C.-C., Joshi, S.

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ARHGEF10 knockout inhibits platelet aggregation and protects mice from thrombus formation von Lu, D.‐H., Hsu, C.‐C., Huang, S.‐W., Tu, H.‐J., Huang, T.‐F., Liou, H.‐C., Liao, H.‐M., Chen, C.‐H., Fu, W.‐M., Gau, S. S.‐F.

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The demonstration of the Si nano-tube device with the promising short channel control von Liao, M.-H., Chen, P.-G.

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The special trench design near the through silicon vias (TSVs) to reduce the keep-out zone for application in three-dimensional integral circuits von Liao, M-H

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The dependency of different stress-level SiN capping films and the optimization of D-SMT process for the device performance booster in Ge n-FinFETs von Liao, M.-H., Chen, P.-G.

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Ferroelectric HfZrO2 FETs for steep switch onset von Chen, K.-T., Liao, C.-Y., Chen, H.-Y., Lo, C., Siang, G.-Y., Lin, Y.-Y., Tseng, Y.-J., Chang, C., Chueh, C.-Y., Yang, Y.-J., Liao, M.-H., Li, K.-S., Chang, S.T., Lee, M.H.

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