VB-1 an N-channel In 0.53 Ga 0.47 As plasma oxide insulated gate inversion-mode fet von Liao, A.S.H., Tell, B., Leheny, R.F., Chang, T.Y., Nahory, R.E.

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VB-1 an N-channel In0.53Ga0.47As plasma oxide insulated gate inversion-mode fet von Liao, A.S.H., Tell, B., Leheny, R.F., Chang, T.Y., Nahory, R.E.

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An In0.53Ga0.47As/Si3N4n-channel inversion mode MISFET von Liao, A.S.H., Leheny, R.F., Nahory, R.E., De Winter, J.C.

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An In 0.53 Ga 0.47 As/Si 3 N 4 n-channel inversion mode MISFET von Liao, A.S.H., Leheny, R.F., Nahory, R.E., De Winter, J.C.

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Silicon Oxide enhanced Schottky gate In 0.53 Ga 0.47 As FET's with a self-aligned recessed gate structure von Cheng, C.L., Liao, A.S.H., Chang, T.Y., Caridi, E.A., Coldren, L.A., Lalevic, B.

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Monolithic integration of a planar embedded InGaAs p-i-n detector with InP depletion-mode FET's von Tell, B., Liao, A.S.H., Brown-Goebeler, K.F., Bridges, T.J., Burkhardt, G., Chang, T.Y., Bergano, N.S.

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An In 0.53 Ga 0.47 As p-channel MOSFET with plasma-grown native oxide insulated gate von Liao, A.S.H., Tell, B., Leheny, R.F., Nahory, R.E., DeWinter, J.C., Martin, R.J.

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Silicon Oxide enhanced Schottky gate In0.53Ga0.47As FET's with a self-aligned recessed gate structure von Cheng, C.L., Liao, A.S.H., Chang, T.Y., Caridi, E.A., Coldren, L.A., Lalevic, B.

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Submicrometer self-aligned recessed gate InGaAs MISFET exhibiting very high transconductance von Cheng, C.L., Liao, A.S.H., Chang, T.Y., Leheny, R.F., Coldren, L.A., Lalevic, B.

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VIA-5 enhanced Schottky-gate InGaAs field-effect transistors using e-beam evaporated silicon oxide von Cheng, C.L., Lalevic, B., Liao, A.S.H., Chang, T.Y., Caridi, E.A., Coldren, L.A.

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A new self-aligned recessed-gate InP MESFET von Cheng, C.L., Coldren, L.A., Miller, B.I., Liao, A.S.H., Leheny, R.F., Lalevic, B.

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An In0.53Ga0.47As p-channel MOSFET with plasma-grown native oxide insulated gate von Liao, A.S.H., Tell, B., Leheny, R.F., Nahory, R.E., DeWinter, J.C., Martin, R.J.

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