Atomic threshold-switching enabled MoS2 transistors towards ultralow-power electronics von Hua, Qilin, Gao, Guoyun, Jiang, Chunsheng, Yu, Jinran, Sun, Junlu, Zhang, Taiping, Gao, Bin, Cheng, Weijun, Liang, Renrong, Qian, He, Hu, Weiguo, Sun, Qijun, Wang, Zhong Lin, Wu, Huaqiang

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Ultrahigh sensitive near-infrared photodetectors based on MoTe2/germanium heterostructure von Chen, Wenjie, Liang, Renrong, Zhang, Shuqin, Liu, Yu, Cheng, Weijun, Sun, Chuanchuan, Xu, Jun

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Tuning Light Emission of a Pressure-Sensitive Silicon/ZnO Nanowires Heterostructure Matrix through Piezo-phototronic Effects von Chen, Mengxiao, Pan, Caofeng, Zhang, Taiping, Li, Xiaoyi, Liang, Renrong, Wang, Zhong Lin

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Investigation of Negative Capacitance Gate-all-Around Tunnel FETs Combining Numerical Simulation and Analytical Modeling von Jiang, Chunsheng, Liang, Renrong, Xu, Jun

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Precisely controllable n-type doping in MoTe2 field effect transistors by hydrazine treatment von Chen, Wenjie, Liang, Renrong, Wang, Jing, Xu, Jun

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Surface plasmon-enhanced photodetection in MoTe2 phototransistors with Au nanoparticles von Chen, Wenjie, Liang, Renrong, Liu, Yu, Zhang, Shuqin, Cheng, Weijun, Zhao, Linyuan, Xu, Jun

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Leakage current of germanium-on-insulator-based junctionless nanowire transistors von Sun, Chuanchuan, Liang, Renrong, Liu, Libin, Wang, Jing, Xu, Jun

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Enhanced carrier mobility and direct tunneling probability of biaxially strained Ge1−xSnx alloys for field-effect transistors applications von Liu, Lei, Liang Renrong, Wang, Jing, Xu, Jun

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A two-dimensional analytical model for short channel junctionless double-gate MOSFETs von Jiang, Chunsheng, Liang, Renrong, Wang, Jing, Xu, Jun

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A carrier-based analytical theory for negative capacitance symmetric double-gate field effect transistors and its simulation verification von Jiang, Chunsheng, Liang, Renrong, Wang, Jing, Xu, Jun

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A Compact Quasi-Static Terminal Charge and Drain Current Model for Double-Gate Junctionless Transistors and Its Circuit Validation von Chunsheng Jiang, Renrong Liang, Jun Xu, Alam, Muhammad Ashraful

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Analysis and Design of a Large Dither Injection Circuit for Improving Linearity in Pipelined ADCs von Zhu, Congyi, Liang, Renrong, Lin, Jun, Wang, Zhongfeng, Li, Li

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Ferroelastic switching in a layered-perovskite thin film von Wang, Chuanshou, Ke, Xiaoxing, Wang, Jianjun, Liang, Renrong, Luo, Zhenlin, Tian, Yu, Yi, Di, Zhang, Qintong, Wang, Jing, Han, Xiu-Feng, Van Tendeloo, Gustaaf, Chen, Long-Qing, Nan, Ce-Wen, Ramesh, Ramamoorthy, Zhang, Jinxing

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Gate controllable spin transistor with semiconducting tunneling barrier von Zhang, Shuqin, Liang, Renrong, Wang, Xiawa, Chen, Wenjie, Cheng, Weijun, Wang, Jing, Xu, Jun

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Deterministic reversal of single magnetic vortex circulation by an electric field von Zhang, Yuelin, Wang, Chuanshou, Huang, Houbing, Lu, Jingdi, Liang, Renrong, Liu, Jian, Peng, Renci, Zhang, Qintong, Zhang, Qinghua, Wang, Jing, Gu, Lin, Han, Xiu-Feng, Chen, Long-Qing, Ramesh, Ramamoorthy, Nan, Ce-Wen, Zhang, Jinxing

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Flexible Quasi‐van der Waals Ferroelectric Hafnium‐Based Oxide for Integrated High‐Performance Nonvolatile Memory von Liu, Houfang, Lu, Tianqi, Li, Yuxing, Ju, Zhenyi, Zhao, Ruiting, Li, Jingzhou, Shao, Minghao, Zhang, Hainan, Liang, Renrong, Wang, Xiao Renshaw, Guo, Rui, Chen, Jingsheng, Yang, Yi, Ren, Tian‐Ling

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Synaptic Computation Demonstrated in a Two-Synapse Network Based on Top-Gate Electric-Double-Layer Synaptic Transistors von Wang, Jiabin, Li, Yuxing, Liang, Renrong, Zhang, Ying, Mao, Weiquan, Yang, Yi, Ren, Tian-Ling

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Three-dimensional vertical ZnO transistors with suspended top electrodes fabricated by focused ion beam technology von Sun, Chi, Zhao, Linyuan, Hao, Tingting, Liang, Renrong, Ye, Haitao, Li, Junjie, Gu, Changzhi

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Simulation of GeSn/Ge tunneling field-effect transistors for complementary logic applications von Liu, Lei, Liang, Renrong, Wang, Jing, Xiao, Lei, Xu, Jun

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A Closed Form Analytical Model of Back-Gated 2-D Semiconductor Negative Capacitance Field Effect Transistors von Jiang, Chunsheng, Si, Mengwei, Liang, Renrong, Xu, Jun, Ye, Peide D., Alam, Muhammad Ashraful

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