The Effects of Polarization-Modulated Quaternary AlInGaN Barriers in Deep-UV-LED von Liao, Fengbo, Zhang, Keming, Zeng, Ni, Lian, Mengxiao, Li, Jialin, Zhang, Xichen, Yin, Yi-An, Qi-bao, Wu

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2.2 kV breakdown voltage GaN double-channel Schottky barrier diode with one grading-AlGaN barrier and polarization junction von Qiao, Sun, Fengbo, Liao, Yafang, Xie, Jialin, Li, Mengxiao, Lian, Xichen, Zhang, Keming, Zhang, Bingzhi, Zou, Yian, Yin

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Performance enhancement of deep-ultraviolet LEDs by using quaternary AlInGaN polarization-engineered multiple-symmetrical-stair quantum barriers without electron blocking layer von Zhang, Keming, Liao, Fengbo, Lian, Mengxiao, Li, Jialin, Zhang, Xichen, Yin, Yi-An

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A dual-gate and Γ-type field plate GaN base E-HEMT with high breakdown voltage on simulation investigation von Li, Jialin, Yin, Yian, Zeng, Ni, Liao, Fengbo, Lian, Mengxiao, Zhang, Xichen, Zhang, Keming, Zhang, Yong, Li, Jingbo

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2.2 kV Breakdown Voltage AlGaN/GaN Schottky Barrier Diode with Polarization Doping Modulated 3D Hole Gas Cap Layer and Polarization Junction Structure von Liao, Fengbo, Zhang, Keming, Zeng, Ni, Lian, Mengxiao, Li, Jialin, Zhang, Xichen, Tian, Ziwei, Yin, Yi-An

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2.57GW/cm2 normally-off composite stepped gate GaN-based HEMT with p-GaN buried layer and field plate von Li, Jialin, Yin, Yian, Liao, Fengbo, Lian, Mengxiao, Zhang, Xichen, Zhang, Keming, Xie, Yafang, Wu, You, Zou, Bingzhi, Zhang, Zhixiang, Li, Jingbo

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Research on the effect of gate etching depth on the performance of GaN-based HEMTs under medium source-drain etching von Li, Jialin, Yin, Yian, Liao, Fengbo, Lian, Mengxiao, Zhang, Xichen, Zhang, Keming, Xie, Yafang, Wu, You, Zou, Bingzhi, Zhang, Zhixiang, Li, Jingbo

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9 mV/V ultra-low DIBL of suppressing SCEs in InAlN/GaN HEMT with lattice-matched InxAlyGa(1-x-y)N back-barrier for RF device von Lian, Mengxiao, Yin, Yian, Li, Jialin, Zou, Bingzhi, Zhang, Keming, Zhang, Xichen, Xie, Yafang, Wu, You, Zhang, Zhixiang

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Normally-off AlGaN/AlN/GaN HEMT with a composite recessed gate von Li, Jialin, Yin, Yian, Zeng, Ni, Liao, Fengbo, Lian, Mengxiao, Zhang, Xichen, Zhang, Keming, Li, Jingbo

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Gold-free ohmic contact radio frequency device based on two-step annealing and preparation method thereof von YIN YIAN, LIAN MENGXIAO

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Enhanced high-voltage HEMT device with multi-interdigital buried gate structure and preparation method thereof von MAO MINGHUA, YIN YI'AN, LIAN MENGXIAO

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Perirenal fat thickness and liver fat fraction are independent predictors of MetS in adults with overweight and obesity suspected with NAFLD: a retrospective study von Wang, Li, Pan, Yuning, Ye, Xianwang, Zhu, Yongmeng, Lian, Yandong, Zhang, Hui, Xu, Miao, Liu, Mengxiao, Ruan, Xinzhong

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Long-lasting effects of postweaning sodium butyrate exposure on social behaviors in adult mice von Zhao, Penghui, Meng, Li, Dou, Mengxiao, Mao, Jiawen, Zhang, Ge, Zheng, Min, Yin, Xi, Tao, Zifei, Gong, Miao, Song, Li, Lian, Kaoqi, de-la-Paz, Omar Israel Velez, Guo, Qingjun, Shi, Haishui

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Otolith nucleus chemistry distinguishes Electrona antarctica in the westward-flowing Antarctic Slope Current and eastward-flowing Antarctic Circumpolar Current off East Antarctica von Zhu, Guoping, Duan, Mi, Ashford, Julian R., Wei, Lian, Zhou, Mengxiao, Bestley, Sophie

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COMTRADE format fault recording method based on programmable technology von ZHANG PENGFEI, WANG FUHONG, XING MENGXIAO, LI YUFENG, LIAN ZHIWEI

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Decorative sculpture convenient to move and operation method thereof von LIU YANMIN, ZHOU XIAOPING, LIAN XIAOBO, CHEN MENGXIAO

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Optical power prediction method and device von QIN ZIXUAN, SHI BENDONG, WANG FUHONG, MA GUIBIN, XING MENGXIAO, CHANG LUNKAI, XU MAOLIN, ZHANG JIAQING, LIAN ZHIWEI

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孕妇及新生儿潜在影响新生儿第1个24 h血糖水平相关因素 von 黄秋红, 蒙晓慧, 覃尹, 温美灵, 韦秋菊, 韦小连

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