Design and Simulation of 5-20-kV GaN Enhancement-Mode Vertical Superjunction HEMT von Zhongda Li, Chow, T. Paul

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Sidewall Dominated Characteristics on Fin-Gate AlGaN/GaN MOS-Channel-HEMTs von Takashima, Shinya, Zhongda Li, Chow, T. Paul

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Mitochondrial ferritin alleviates apoptosis by enhancing mitochondrial bioenergetics and stimulating glucose metabolism in cerebral ischemia reperfusion von Wang, Peina, Cui, Yanmei, Liu, Yuanyuan, Li, Zhongda, Bai, Huiyuan, Zhao, Yashuo, Chang, Yan-Zhong

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Cdh5-mediated Fpn1 deletion exerts neuroprotective effects during the acute phase and inhibitory effects during the recovery phase of ischemic stroke von Zheng, Huiwen, Guo, Xin, Kang, Shaomeng, Li, Zhongda, Tian, Tian, Li, Jianhua, Wang, Fudi, Yu, Peng, Chang, Shiyang, Chang, Yan-zhong

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Occupational attainment and stratification in China: The interactive effects of social networks and the hukou system von Li, Zhongda, Lin, Jianhao, Liu, Lu

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Metal--Oxide--Semiconductor Interface and Dielectric Properties of Atomic Layer Deposited SiO2 on GaN von Takashima, Shinya, Li, Zhongda, Chow, T. Paul

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Impact of annealing on ALD Al2O3 gate dielectric for GaN MOS devices von Marron, Thomas, Takashima, Shinya, Li, Zhongda, Chow, T. Paul

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Channel scaling of hybrid GaN MOS-HEMTs von Li, Zhongda, Chow, T. Paul

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Preference or endowment? Intergenerational transmission of women’s work behavior and the underlying mechanisms von Li, Zhongda, Liu, Lu

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Avalanche Breakdown Design Parameters in GaN von Li, Zhongda, Pala, Vipindas, Chow, T. Paul

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Design and Simulation of Novel Enhancement Mode 5--20 kV GaN Vertical Superjunction High Electron Mobility Transistors for Smart Grid Applications von Li, Zhongda, Chow, T. Paul

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A New Method to Modify Two-Dimensional Electron Gas Density by GaN Cap Etching von Li, Zhongda, Chow, T. Paul

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Financial globalization, domestic financial freedom and risk sharing across countries von Li, Zhongda, Liu, Lu

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Robustness of GaN vertical superjunction HEMT von Zhongda Li, Chow, T. Paul

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High voltage normally-off GaN MOSC-HEMTs on silicon substrates for power switching applications von Zhongda Li, Waldron, John, Dayal, Rohan, Parsa, Leila, Hella, Mona, Chow, T. Paul

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Health insurance, risk attitudes, and household financial behavior von Li, Zhongda, Liu, Lu, Shi, Jiayu, Sui, Yubing

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Drift region optimization in high-voltage GaN MOS-gated HEMTs von Li, Zhongda, Chow, T. P.

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Over 1000 V/30 mA operation GaN-on-Si MOSFETs fabricated on Si substrates von NIIYAMA, Yuki, ZHONGDA LI, CHOW, T. Paul, JIANG LI, NOMURA, Takehiko, KATO, Sadahiro

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Nanoparticles insert a three dimensional cavity structure of proteins for function inhibition: The Case of CeO2 and SARS-CoV-2 von Zhang, Guofang, Wang, Xiaofeng, Wang, Guocheng, Suo, Xiaoman, Qiu, Yu, Luo, Rong-Hua, Liu, Yingnan, Li, Qi, Luo, Wenhe, Shi, Zhenzhen, Liu, Fangfang, Li, Zhongda, Qu, Jing, Li, Liang, Bastús, Neus G., Himly, Martin, Wang, Liming, Liu, Feng-Liang, Zheng, Yong-Tang, Puntes, Victor, Li, Yang

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Channel scaling of hybrid GaN MOS-HEMTs von Zhongda Li, Chow, T P

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