Environmentally Robust Memristor Enabled by Lead‐Free Double Perovskite for High‐Performance Information Storage von Cheng, Xue‐Feng, Qian, Wen‐Hu, Wang, Jia, Yu, Chuang, He, Jing‐Hui, Li, Hua, Xu, Qing‐Feng, Chen, Dong‐Yun, Li, Na‐Jun, Lu, Jian‐Mei

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All‐Inorganic Ionic Polymer‐Based Memristor for High‐Performance and Flexible Artificial Synapse von Zhao, Yong‐Yan, Sun, Wu‐Ji, Wang, Jia, He, Jing‐Hui, Li, Hua, Xu, Qing‐Feng, Li, Na‐Jun, Chen, Dong‐Yun, Lu, Jian‐Mei

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Independent Memcapacitive Switching Triggered by Bromide Ion Migration for Quaternary Information Storage von Qian, Wen‐Hu, Cheng, Xue‐Feng, Zhao, Yong‐Yan, Zhou, Jin, He, Jing‐Hui, Li, Hua, Xu, Qing‐Feng, Li, Na‐Jun, Chen, Dong‐Yun, Lu, Jian‐Mei

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Pseudohalide‐Induced 2D (CH3NH3)2PbI2(SCN)2 Perovskite for Ternary Resistive Memory with High Performance von Cheng, Xue‐Feng, Hou, Xiang, Zhou, Jin, Gao, Bi‐Jun, He, Jing‐Hui, Li, Hua, Xu, Qing‐Feng, Li, Na‐Jun, Chen, Dong‐Yun, Lu, Jian‐Mei

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Detection of NO2 Down to One ppb Using Ion‐in‐Conjugation‐Inspired Polymer von Zhou, Jin, Cheng, Xue‐Feng, Gao, Bi‐Jun, Yu, Chuang, He, Jing‐Hui, Xu, Qing‐Feng, Li, Hua, Li, Na‐Jun, Chen, Dong‐Yun, Lu, Jian‐Mei

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Design and Experiment of a 4-MV Self-Triggered Switch von Li, Jun-Na, Xie, Lin-Shen, Wu, Wei, He, Shi

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Surface modification of polysquaraines to sense humidity within a second for breath monitoring von Zhou, Jin, Xiao, Xin, Cheng, Xue-Feng, Gao, Bi-Jun, He, Jing-Hui, Xu, Qing-Feng, Li, Hua, Li, Na-Jun, Chen, Dong-Yun, Lu, Jian-Mei

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Design and analysis of the Tesla transformer with duplex secondary winding von He, Shi, Li, Jun-na, Qiu, Ai-ci

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Ion‐in‐Conjugation: Squaraine as an Ultrasensitive Ammonia Sensor Material von Xiao, Xin, Cheng, Xue‐Feng, Hou, Xiang, He, Jing‐Hui, Xu, Qing‐Feng, Li, Hua, Li, Na‐Jun, Chen, Dong‐Yun, Lu, Jian‐Mei

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An ion-in-conjugation polymer enables the detection of NO2 with parts-per-trillion sensitivity and ultrahigh selectivity von Yu, Chuang, Lin, Hong-Zhen, Zhou, Jin, Cheng, Xue-Feng, He, Jing-Hui, Li, Hua, Xu, Qing-Feng, Li, Na-Jun, Chen, Dong-Yun, Lu, Jian-Mei

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Simulation of primary current distribution in Tesla-type pulse generators von He, Shi, Li, Jun-na, Wang, Yong-liang, Cui, Guang-xi, Chen, Xu-liang, Qiu, Ai-ci

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Lead‐free perovskite MASnBr3‐based memristor for quaternary information storage von Qian, Wen‐Hu, Cheng, Xue‐Feng, Zhou, Jin, He, Jing‐Hui, Li, Hua, Xu, Qing‐Feng, Li, Na‐Jun, Chen, Dong‐Yun, Yao, Zhi‐Gang, Lu, Jian‐Mei

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1D π‐d Conjugated Coordination Polymers for Multilevel Memory of Long‐Term and High‐Temperature Stability von Cheng, Xue‐Feng, Shi, Er‐Bo, Hou, Xiang, Shu, Jie, He, Jing‐Hui, Li, Hua, Xu, Qing‐Feng, Li, Na‐Jun, Chen, Dong‐Yun, Lu, Jian‐Mei

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Mussel‐Inspired Polydopamine Coating for Flexible Ternary Resistive Memory von Zhao, Yong‐Yan, Cheng, Xue‐Feng, Qian, Wen Hu, Zhou, Jin, Sun, Wu‐Ji, Hou, Xiang, He, Jing‐Hui, Li, Hua, Xu, Qing‐Feng, Li, Na‐Jun, Chen, Dong‐Yun, Lu, Jian‐Mei

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The Effect of Random and Block Copolymerization with Pendent Carbozole Donors and Naphthalimide Acceptors on Multilevel Memory Performance von Zhang, Qi‐jian, Zhou, Jia‐hui, Li, Hui, He, Jing‐hui, Li, Na‐jun, Xu, Qing‐feng, Chen, Dong‐yun, Li, Hua, Lu, Jian‐mei

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Conjugated zwitterion-inspired flexible ternary resistive memory from rhodamine dyes von Wang, Jia, Cheng, Xue-Feng, Qian, Wen-Hu, Zhao, Yong-Yan, He, Jing-Hui, Xu, Qing-Feng, Li, Hua, Chen, Dong-Yun, Li, Na-Jun, Lu, Jian-Mei

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Ultrasensitive and robust organic gas sensors through dual hydrogen bonding von Zhou, Jin, Lin, Hongzhen, Cheng, Xue-Feng, Shu, Jie, He, Jing-Hui, Li, Hua, Xu, Qing-Feng, Li, Na-Jun, Chen, Dong-Yun, Lu, Jian-Mei

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Better Organic Ternary Memory Performance through Self‐Assembled Alkyltrichlorosilane Monolayers on Indium Tin Oxide (ITO) Surfaces von Hou, Xiang, Cheng, Xue‐Feng, Zhou, Jin, He, Jing‐Hui, Xu, Qing‐Feng, Li, Hua, Li, Na‐Jun, Chen, Dong‐Yun, Lu, Jian‐Mei

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Terminal amino monomethylation-triggered intermolecular H- to J-aggregations to realize tunable memory devices von Zhang, Qi-jian, Li, Hua, Xu, Qing-feng, He, Jing-hui, Chen, Dong-yun, Li, Na-jun, Lu, Jian-Mei

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Upgrading Electroresistive Memory from Binary to Ternary Through Single‐Atom Substitution in the Molecular Design von Cheng, Xue‐Feng, Shi, Er‐Bo, Hou, Xiang, Xia, Shu‐Gang, He, Jing‐Hui, Xu, Qing‐Feng, Li, Hua, Li, Na‐Jun, Chen, Dong‐Yun, Lu, Jian‐Mei

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