Dynamic NBTI of p-MOS transistors and its impact on MOSFET scaling von Chen, G., Li, M.F., Ang, C.H., Zheng, J.Z., Kwong, D.L.

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A high performance MIM capacitor using HfO2 dielectrics von Hang Hu, Chunxiang Zhu, Lu, Y.F., Li, M.F., Byung Jin Cho, Choi, W.K.

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A high-density MIM capacitor (13 fF/μm2) using ALD HfO2 dielectrics von Xiongfei Yu, Chunxiang Zhu, Hang Hu, Chin, A., Li, M.F., Byung Jin Cho, Dim-Lee Kwong, Foo, P.D., Ming Bin Yu

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Physical and electrical characteristics of HfN gate electrode for advanced MOS devices von Yu, H.Y., Lim, H.F., Chen, J.H., Li, M.F., Chunxiang Zhu, Tung, C.H., Du, A.Y., Wang, W.D., Chi, D.Z., Kwong, D.-L.

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Schottky-barrier S/D MOSFETs with high-k gate dielectrics and metal-gate electrode von Shiyang Zhu, Yu, H.Y., Whang, S.J., Chen, J.H., Chen Shen, Chunxiang Zhu, Lee, S.J., Li, M.F., Chan, D.S.H., Yoo, W.J., Du, A., Tung, C.H., Singh, J., Chin, A., Kwong, D.L.

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Metal gate work function engineering on gate leakage of MOSFETs von Yong-Tian Hou, Ming-Fu Li, Low, T., Dim-Lee Kwong

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High-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectrics von Shi-Jin Ding, Hang Hu, Lim, H.F., Kim, S.J., Yu, X.F., Chunxiang Zhu, Li, M.F., Byung Jin Cho, Chan, D.S.H., Rustagi, S.C., Yu, M.B., Chin, A., Dim-Lee Kwong

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ALD (HfO 2) x(Al 2O 3) 1− x high- k gate dielectrics for advanced MOS devices application von Yu, H.Y., Li, M.F., Kwong, D.L.

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Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectric von Yang, T., Shen, C., Li, M.F., Ang, C.H., Zhu, C.X., Yeo, Y.-C., Samudra, G., Kwong, D.-L.

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Integrated transcriptomics and metabolites at different growth stages reveals the regulation mechanism of bolting and flowering of Angelica sinensis von Li, J., Li, M.L., Zhu, T.T., Zhang, X.N., Li, M.F., Wei, J.H.

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Fast DNBTI components in p-MOSFET with SiON dielectric von Yang, T., Shen, C., Li, M.F., Ang, C.H., Zhu, C.X., Yeo, Y.-C., Samudra, G., Rustagi, S.C., Yu, M.B., Kwong, D.-L.

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Integrated antennas on Si with over 100 GHz performance, fabricated using an optimized proton implantation process von Chan, K.T., Chin, A., Lin, Y.D., Chang, C.Y., Zhu, C.X., Li, M.F., Kwong, D.L., McAlister, S., Duh, D.S., Lin, W.J.

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Three-Layer laminated metal gate electrodes with tunable work functions for CMOS applications von Bai, W.P., Bae, S.H., Wen, H.C., Mathew, S., Bera, L.K., Balasubramanian, N., Yamada, N., Li, M.F., Kwong, D.-L.

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Social sleepers: The effects of social status on sleep in terrestrial mammals von Smeltzer, E.A., Stead, S.M., Li, M.F., Samson, D., Kumpan, L.T., Teichroeb, J.A.

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Yb-doped Ni FUSI for the n-MOSFETs gate electrode application von Chen, J.D., Yu, H.Y., Li, M.F., Kwong, D.-L., van Dal, M.J.H., Kittl, J.A., Lauwers, A., Absil, P., Jurczak, M., Biesemans, S.

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Evidence and understanding of ALD HfO2-Al2O3 laminate MIM capacitors outperforming sandwich counterparts von Shi-Jin Ding, Hang Hu, Chunxiang Zhu, Li, M.F., Kim, S.J., Byung Jin Cho, Chan, D.S.H., Yu, M.B., Du, A.Y., Chin, A., Kwong, D.-L.

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High-density MIM capacitors using AlTaOx dielectrics von Yang, M.Y., Huang, C.H., Chin, A., Chunxiang Zhu, Li, M.F., Dim-Lee Kwong

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Influence of Mg2+ substitution on the crystal structure and microwave dielectric properties of ZnZrNb2O8 ceramics von Niu, Y.J., Liu, M.T., Li, M.F., Bi, J.X., Wu, H.T.

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Fully silicided NiSi gate on La2O3 MOSFETs von Lin, C.Y., Ma, M.W., Chin, A., Yeo, Y.C., Chunxiang Zhu, Li, M.F., Dim-Lee Kwong

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Microwave dielectric properties of ultra-low loss Li2MgTi0.7(Mg1/3Nb2/3)0.3O4 ceramics sintered at low temperature by LiF addition von Yang, Y.K., Liu, F.L., Zhang, Y.W., Li, M.F., Ling, F., Wu, H.T.

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