Demonstration of valley anisotropy utilized to enhance the thermoelectric power factor von Li, Airan, Hu, Chaoliang, He, Bin, Yao, Mengyu, Fu, Chenguang, Wang, Yuechu, Zhao, Xinbing, Felser, Claudia, Zhu, Tiejun

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High-Performance Mg3Sb2-xBix Thermoelectrics: Progress and Perspective von Li, Airan, Fu, Chenguang, Zhao, Xinbing, Zhu, Tiejun

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High performance magnesium-based plastic semiconductors for flexible thermoelectrics von Li, Airan, Wang, Yuechu, Li, Yuzheng, Yang, Xinlei, Nan, Pengfei, Liu, Kai, Ge, Binghui, Fu, Chenguang, Zhu, Tiejun

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Violation of the T-1 Relationship in the Lattice Thermal Conductivity of Mg3Sb2 with Locally Asymmetric Vibrations von Zhu, Yifan, Xia, Yi, Wang, Yancheng, Sheng, Ye, Yang, Jiong, Fu, Chenguang, Li, Airan, Zhu, Tiejun, Luo, Jun, Wolverton, Christopher, Snyder, G. Jeffrey, Liu, Jianjun, Zhang, Wenqing

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Opening the Bandgap of Metallic Half‐Heuslers via the Introduction of d–d Orbital Interactions von Li, Airan, Brod, Madison K., Wang, Yuechu, Hu, Kejun, Nan, Pengfei, Han, Shen, Gao, Ziheng, Zhao, Xinbing, Ge, Binghui, Fu, Chenguang, Anand, Shashwat, Snyder, G. Jeffrey, Zhu, Tiejun

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Reversible Room Temperature Brittle‐Plastic Transition in Ag2Te0.6S0.4 Inorganic Thermoelectric Semiconductor von Wang, Yuechu, Li, Airan, Hu, Huiping, Fu, Chenguang, Zhu, Tiejun

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Global softening to manipulate sound velocity for reliable high-performance MgAgSb thermoelectrics von Li, Airan, Wang, Longquan, Li, Jiankang, Mori, Takao

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Comparison of chest compression interruption times across 2 automated devices: a randomized, crossover simulation study von Estock, Jamie L., MA, Curinga, Holly K., MSN, Li, Airan, MS, Grieve, Lorin B., PharmD, Brackney, Christopher R., DO

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Reversible Room Temperature Brittle‐Plastic Transition in Ag 2 Te 0.6 S 0.4 Inorganic Thermoelectric Semiconductor von Wang, Yuechu, Li, Airan, Hu, Huiping, Fu, Chenguang, Zhu, Tiejun

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Tuning Optimum Temperature Range of Bi2Te3‐Based Thermoelectric Materials by Defect Engineering von Zhang, Qi, Fang, Teng, Liu, Feng, Li, Airan, Wu, Yehao, Zhu, Tiejun, Zhao, Xinbing

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Assessing Use Errors Related to the Interface Design of Electrosurgical Units von Estock, Jamie L., MA, Li, Airan, MS, Casey, Maureen C., BSN, RN, CNOR, Taylor, Matthew A., PhD, Boudreaux-Kelly, Monique Y., PhD, Choma, Martin D., RN, Jacobs, Katrina, MS, Eibling, David E., MD, FACS

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Achieving n-type Conduction in AMg2Sb2 (A = Yb, Eu, Ca, Sr, Ba) Zintl Phases von Zheng, Xin, Li, Airan, Liu, Shuo, Han, Zhongkang, Zhang, Min, Liu, Feng, Fu, Chenguang, Zhu, Tiejun

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Chemical stability and degradation mechanism of Mg3Sb2-Bi thermoelectrics towards room-temperature applications von Li, Airan, Nan, Pengfei, Wang, Yuechu, Gao, Ziheng, Zhang, Shiyun, Han, Zhongkang, Zhao, Xinbing, Ge, Binghui, Fu, Chenguang, Zhu, Tiejun

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Selective Scatterings of Phonons and Electrons in Defective Half-Heusler Nb 1- δ CoSb for the Figure of Merit zT > 1 von Gao, Ziheng, Xia, Kaiyang, Nan, Pengfei, Yin, Li, Hu, Chaoliang, Li, Airan, Han, Shen, Zhang, Min, Chen, Mengzhao, Ge, Binghui, Zhang, Qian, Fu, Chenguang, Zhu, Tiejun

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Simultaneous optimization of the electrical and thermal transport properties of LuNiSb aliovalent doping von Miao, Pu, Yang, Cheng, Han, Shen, Dai, Shengnan, Li, Airan, Xi, Lili, Yang, Jiong, Zhu, Tiejun, Fu, Chenguang

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Selective Scatterings of Phonons and Electrons in Defective Half‐Heusler Nb1−δCoSb for the Figure of Merit zT > 1 von Gao, Ziheng, Xia, Kaiyang, Nan, Pengfei, Li, Yin, Hu, Chaoliang, Li, Airan, Shen, Han, Zhang, Min, Chen, Mengzhao, Ge, Binghui, Zhang, Qian, Fu, Chenguang, Zhu, Tiejun

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Simultaneous optimization of the electrical and thermal transport properties of LuNiSb via aliovalent doping von Miao, Pu, Yang, Cheng, Han, Shen, Dai, Shengnan, Li, Airan, Xi, Lili, Yang, Jiong, Zhu, Tiejun, Fu, Chenguang

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Tuning Optimum Temperature Range of Bi 2 Te 3 ‐Based Thermoelectric Materials by Defect Engineering von Zhang, Qi, Fang, Teng, Liu, Feng, Li, Airan, Wu, Yehao, Zhu, Tiejun, Zhao, Xinbing

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Low interfacial resistivity in CoSi2/ZrCoSb thermoelectric junctions von Xiong, Bowen, Fu, Chenguang, Han, Shen, Li, Airan, Zhao, Xinbing, Zhu, Tiejun

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Ni atomic disorder in ZrNiSn revealed by scanning transmission electron microscopy von Li, Zixuan, Xue, Wenhua, Han, Shen, Gao, Ziheng, Li, Airan, Zhao, Xinbing, Wang, Yumei, Fu, Chenguang, Zhu, Tiejun

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